unmatched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor suitable for a variety of RF
power amplifier applications. Using state of the art
wafer fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over multiple octave bandwidths for
today’s demanding application needs.
The MAGX-000035-01000X is constructed with
either a flanged or flangeless ceramic package
which provides excellent thermal performance. High
breakdown voltages allow for reliable and stable
operation in extreme mismatched load conditions
compared with older semiconductor technologies.
MAGX-000035-01000S (Flangeless)
Ordering Information
Part Number
MAGX-000035-010000
MAGX-000035-01000S
MAGX-000035-SB2PPR
MAGX-000035-SB3PPR
Package
10 W GaN Power
Transistor (Flanged)
10 W GaN Power
Transistor (Flangeless)
1.2-1.4 GHz Evaluation
Board (Flanged)
1.2-1.4 GHz Evaluation
Board (Flangeless)
Applications
Ordering Information
1,2
General purpose for pulsed or CW applications:
Commercial Wireless Infrastructure (WCDMA,
LTE, WIMAX)
Civilian and Military Radar
Military and Commercial Communications
Public Radio
Industrial, Scientific and Medical
SATCOM
Instrumentation
Avionics
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
Absolute Maximum Ratings
1, 2, 3
Parameter
Supply Voltage (V
DD
)
Supply Voltage (V
GG
)
Supply Current (I
DD
)
Input Power (P
IN
)
Junction/Channel Temp
MTTF (T
J
< 200 °C)
Continuous Power Dissipation (P
DISS
) at 85 ºC
Pulsed Power Dissipation (P
AVG
) at 85 ºC
Thermal Resistance, (T
J
= 200 ºC), CW
Thermal Resistance, (T
J
= 200 ºC), Pulsed 500
μs,
10% Duty cycle
Operating Temp
Storage Temp
ESD Min. - Charged Device Model (CDM)
ESD Min. - Human Body Model (HBM)
Limit
+65 V
-8 to 0 V
800 mA
25 dBm
200ºC
600 years
18 W
43 W
9.2 ºC/W
3.4 ºC/W
-40 to +95ºC
-65 to +150ºC
250 V
250 V
Rev. V3
1. Exceeding any one or combination of these limits may cause permanent damage to this device
2. Junction temperature directly affects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime.
3. For saturated performance it is recommended that the sum of (3*Vdd + abs(Vgg)) <175 V.
DC Characteristics
Parameter
Drain-Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Test Conditions
V
GS
= -8 V, V
DS
= 175 V
V
DS
= 5 V, I
D
= 2 mA
V
DS
= 5 V, I
D
= 500 mA
Symbol
I
DS
V
GS (TH)
G
M
Min.
-
-5
5.5
Typ.
-
-3
-
Max.
10.8
-2
-
Units
mA
V
S
DC Characteristics
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
DS
= 0 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
V
DS
= 50 V, V
GS
= -8 V, F = 1 MHz
Symbol
C
ISS
C
OSS
C
RSS
Min.
-
-
-
Typ.
4.4
1.9
0.2
Max.
-
-
-
Units
pF
pF
pF
2
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
Electrical Specifications: T
A
= 25 ºC
Parameter
RF FUNCTIONAL TESTS
CW Output Power (P2dB)
1.3 GHz
Power Gain (P2dB) 1.3 GHz
Drain Efficiency @ 1.3 GHz
Load Mismatch Stability
Load Mismatch Tolerance
V
DD
= 50 V, I
DQ
= 25 mA, P
IN
= 0.3 W
V
DD
= 50 V, I
DQ
= 25 mA
V
DD
= 50 V, I
DQ
= 25 mA, P
OUT
= 10 W
V
DD
= 50 V, I
DQ
= 25 mA, P
IN
= 0.3 W
V
DD
= 50 V, I
DQ
= 25 mA, P
IN
= 0.3 W
P
OUT
G
P
η
D
VSWR-S
VSWR-T
5:1
10:1
10
18
11
19
45
-
-
-
-
-
W
dB
%
-
-
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Rev. V3
Test Fixture Impedance
Freq. (MHz)
1300
Z
IN-OPT
(Ω)
3.6 + j6.9
Z
OUT-OPT
(Ω)
38.3 + j20.5
3
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
1.2—1.4 GHz Typical CW Performance
Freq.
(GHz)
1.20
1.30
1.40
P
OUT
(dBm)
40.0
40.0
40.0
P
OUT
(W)
10.0
10.0
10.0
Gain
(dB)
17.5
18.4
17.8
I
D
(A)
0.49
0.40
0.50
Eff.
(%)
41
44
40
V
D
(V)
50
-
-
I
DQ
(mA)
25
-
-
Rev. V3
3.3 GHz Typical CW Performance
Freq.
(GHz)
3.30
P2dB
(dBm)
40.3
P
OUT
(W)
10.7
Gain
(dB)
16.2
I
D
(A)
0.38
Eff.
(%)
57
V
D
(V)
50
I
DQ
(mA)
25
1.2—1.4 GHz Test Fixture
4
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
MAGX-000035-010000
MAGX-000035-01000S
GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
1.2—1.4 GHz Performance With Pulsed Signal
Rev. V3
V
D
= 50 V
I
DQ
= 25 mA
Pulse = 100
μ
s
Duty = 15%
5
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
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