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1N4005S

产品描述1 A, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小66KB,共2页
制造商CTC [Compact Technology Corp.]
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1N4005S概述

1 A, SILICON, SIGNAL DIODE

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1N4001S thru 1N4007S
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Ampere
PLASTIC SILICON RECTIFIERS
FEATURES
Low cost
Diffused junction
Low forward voltage drop
Low reverse leakage current
High current capability
The plastic material carries UL recognition 94V-0
A
A-405
B
A
C
D
MECHANICAL DATA
Case : JEDEC DO-41 molded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
Dim.
A
B
Min.
25.4
4.20
0.50
2.00
A-405
Max.
-
5.20
0.60
C
2.70
D
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
SYMBOL
1N4001S 1N4002S 1N4003S 1N4004S 1N4005S 1N4006S 1N4007S
UNIT
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
@T
A
=
75 C
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC Method)
Maximum forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction
Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
I
FSM
V
F
I
R
C
J
R
0JA
30
1.1
5
50
15
35
-55 to +150
-55 to +150
A
V
uA
@T
J
=25 C
@T
J
=100 C
pF
C/W
T
J
T
STG
C
C
NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
3.Thermal Resistance Junction to Case at 9.5mm Lead Length.PCB Mounted JEDEC Registered Value.
1
of 2
1N4001S thru 1N4007S

1N4005S相似产品对比

1N4005S 1N4002S 1N4003S 1N4006S 1N4007S 1N4001S 1N4004S
描述 1 A, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, SILICON, SIGNAL DIODE

 
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