SBR12U45LH1
Green
12A SBR
®
SUPER BARRIER RECTIFIER
POWERDI
®
5SP-B
Product Summary
V
RRM
(V)
45
I
O
(A)
12
V
F(typ)
@ +125°C
(V)
0.38
I
R(MAX)
@ V
RRM
(mA)
0.3
Features
•
•
•
Designed as bypass diodes for solar panels
Low profile height (0.75mm) and 7.6mm protruding leads,
enabling the package to be integrated within the solar glass panel
Selectively rated for +200°C maximum junction temperature for
high thermal reliability and excellent high temperature stability
•
•
•
•
•
Patented Super Barrier Rectifier technology
Ultra low forward voltage drop to minimize forward power losses
Very low reverse leakage to ensures maximum efficiency of solar
panel
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
The SBR12U45LH1 uses SBR patented technology that offers ultra-
low V
F
to reduce forward power loss and improve efficiency.
Encapsulated in the new PDI-5SP package with a 0.75mm low height
profile and protruding leads for easy soldering, it is especially suited
for use as a bypass diode in solar panels.
Applications
•
Solar Bypass Diode
Mechanical Data
•
•
•
•
POWERDI5SP
•
Case: POWERDI5SP-B
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Polarity: Cathode bar mark on top and cathode notch on lead
Weight: 0.199 grams (approximate)
C
A
Top View
Pin Configuration
Ordering Information
(Note 4)
Part Number
SBR12U45LH1-13
Notes:
Case
POWERDI5SP-B
Packaging
3000 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
12U45LH1 = Product Type Marking Code
= Manufacturers’ Code Marking
YYWWK = Date Code Marking
YY = Last Two Digits of Year (ex: 14 for 2014)
WW = Week Code (01 ~ 53)
K = Factory Designator
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBR12U45LH1
Document number: DS36233 Rev. 7 - 2
1 of 5
www.diodes.com
July 2014
© Diodes Incorporated
SBR12U45LH1
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Symbol
V
RRM
V
RWM
V
RM
I
O
I
FSM
Value
45
12
300
Unit
V
A
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance Junction to Ambient (Note 5)
V
R
≤
80% V
RRM
Operating Temperature Range
Storage Temperature Range
DC Forward Mode (Note 7)
DC Forward Mode (Note 8)
T
STG
T
J
Symbol
R
θJA
Value
66
-65 to +150
≤
175
≤
200
-65 to +175
°C
°C
Unit
°C/W
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Forward Voltage Drop
Symbol
V
F
Min
—
—
—
—
Leakage Current (Note 6)
I
R
—
—
—
Notes:
Typ
0.40
0.42
0.38
70
90
19
60
Max
0.48
0.50
0.45
200
300
—
—
Unit
V
Test Condition
I
F
= 10A, T
J
= +25°C
I
F
= 12A, T
J
= +25°C
I
F
= 12A, T
J
= +125°C
V
R
= 40V, T
J
= +25°C
V
R
= 45V, T
J
= +25°C
V
R
= 45V, T
J
= +125°C
V
R
= 45V, T
J
= +150°C
µA
mA
5. FR-4 PCB, 2oz. Copper, minimum recommended pad layout per http://www.diodes.com.pdf.
6. Short duration pulse test used to minimize self-heating effect.
7. Max junction temperature +175°C guaranteed for 2 hours at maximum output.
8. Max junction temperature +200°C guaranteed for 2 hours at maximum output.
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBR12U45LH1
Document number: DS36233 Rev. 7 - 2
2 of 5
www.diodes.com
July 2014
© Diodes Incorporated
SBR12U45LH1
I
F
, INSTANTANEOUS FORWARD CURRENT(A)
4.5
4
P
D
, POWER DISSIPATION (W)
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10
15
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 1 Forward Power Dissipation
100
T
A
= 150°C
T
A
= 125°C
10
1
T
A
= 85°C
0.1
0.01
T
A
= 25°C
0.001
T
A
= -55°C
0.0001
0
100
200
300
400
500
600
V
F
, INSTANTANEOUS FORWARD VOLTAGE(mV)
Figure 2 Typical Forward Characteristics
100000
I
R
, INSTANTANEOUS REVERSE CURRENT(µA)
10000
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
100000
f = 1MHz
1000
C
T
, JUNCTION CAPACITANCE (pF)
10000
100
10
T
A
= 25°C
1000
1
0.1
T
A
= -55°C
0
5
10 15 20 25 30 35 40 45
V
R
, INSTANTANEOUS REVERSE VOLTAGE(V)
Figure 3 Typical Reverse Characteristics
100
0
5
10
15
20
25
30
35
V
R
, REVERSE VOLTAGE (V)
Figure 4 Typical Junction Capacitance
40
14
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
12
10
8
6
Note 5
200
175
T
A
, AMBIENT TEMPERATURE (°C)
200
Based on Lead Temp (T
L
) at T
J
= 200
°
C
150
125
100
75
50
25
0
0
Note 9
4
2
0
25
100 125 150 175
50
75
T
A
, AMBIENT TEMPERATURE (°C)
Figure 5 Forward Current Derating Curve
4.5
9 13.5 18 22.5 27 31.5 36 40.5 45
V
R
, DC REVERSE VOLTAGE (V)
Figure 6 Operating Temperature Derating
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBR12U45LH1
Document number: DS36233 Rev. 7 - 2
3 of 5
www.diodes.com
July 2014
© Diodes Incorporated
Note:
9. Device mounted on FR-4 substrate PCB with 10cm*10cm double-sided copper pad.
SBR12U45LH1
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1/2
E
E/2
J 4x
R3
K 4x
R1
D b 2x
N 8x
M 4x
c
A
TOP VIEW
ø
E1
R2
H1
Cutting Burr Side
8x cut faces are not
tin plated
ø1
E2
R
V Groove Inner Line
L 2x
D2
W
L1
POWERDI 5SP
Type B
Dim
Min Max Typ
A
—
0.75
—
B
4.30 4.50 4.40
C
0.155 0.191
—
D
5.70 5.90 5.80
D2
4.40
—
—
E
20.8 21.2 21.0
E1
5.70 5.90 5.80
E2
2.90
—
—
H1
0.19 0.21 0.20
J
—
—
0.20
K
—
—
0.30
L
—
—
7.60
L1
—
—
2.50
M
—
—
0.30
N
0
0.20
—
R
—
—
0.40
R1
—
—
0.15
R2
—
—
0.25
R3
—
—
0.40
W
1.63 1.97 1.80
Ø
8°
12°
—
Ø1
3°
7°
—
All Dimensions in mm
®
BOTTOM VIEW
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
Dimensions
G
X
Y
Y
Value
(in mm)
8.101
8.100
5.100
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBR12U45LH1
Document number: DS36233 Rev. 7 - 2
4 of 5
www.diodes.com
July 2014
© Diodes Incorporated
SBR12U45LH1
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
SBR and POWERDI are registered trademarks of Diodes Incorporated.
SBR12U45LH1
Document number: DS36233 Rev. 7 - 2
5 of 5
www.diodes.com
July 2014
© Diodes Incorporated
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