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CBR25F-010P_15

产品描述25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小462KB,共2页
制造商Central Semiconductor
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CBR25F-010P_15概述

25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

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CBR25F-010P SERIES
FAST RECOVERY
SILICON BRIDGE RECTIFIERS
25 AMP, 100 THRU 600 VOLT
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBR25F-010P series
devices are silicon, single phase, full wave bridge rectifiers
designed for fast recovery applications. The molded
epoxy case has a built-in metal baseplate for heat sink
mounting. The device utilizes standard 0.25” FASTON
terminals.
MARKING: FULL PART NUMBER
CASE FP
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL -010P
Peak Repetitive Reverse Voltage
VRRM
100
DC Blocking Voltage
VR
100
RMS Reverse Voltage
Average Forward Current (TC=60°C)
Peak Forward Surge Current
RMS Isolation Voltage (case to lead)
Operating and StorageJunction Temperature
Thermal Resistance
VR(RMS)
IO
IFSM
Viso
TJ, Tstg
Θ
JC
70
CBR25F
-020P
-040P
200
400
200
140
25
300
2500
-65 to +150
1.5
400
280
-060P
600
600
420
UNITS
V
V
V
A
A
Vac
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C)
SYMBOL TEST CONDITIONS
IR
VR=Rated VRRM
VF
IF=12.5A
trr
trr
IF=0.5A, IR=1.0A,
IF=0.5A, IR=1.0A,
Irr=0.25A (100V, 200V, 400V)
Irr=0.25A (600V)
MIN
MAX
10
1.3
200
350
UNITS
μA
V
ns
ns
R1 (4-November 2013)

CBR25F-010P_15相似产品对比

CBR25F-010P_15 CBR25F-020P CBR25F-060P CBR25F-080P CBR25F-040P CBR25F-100P
描述 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

 
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