HGA40N120FV
March 2015
V
CES
= 1200 V
HGA40N120FV
1200V Field Stop Trench IGBT
FEATURES
1200V Field Stop Trench Technology
Low Saturation Voltage
High Switching Frequency
Very Soft, Fast Recovery Anti-parallel diode
I
C
= 40 A
V
CE(sat) typ
= 2.0 V
TO-247
G C
E
APPLICATION
Welding Converters
Uninterruptible Power Supply
General Purpose Inverters
Absolute Maximum Ratings
Symbol
V
CES
I
C
I
CM
I
F
I
FM
V
GES
P
D
T
J,
T
STG
T
L
Collector Current
Collector Current
Collector Current
Parameter
Collector-Emitter Voltage
– Continuous (T
C
= 25℃)
– Continuous (T
C
= 100℃)
– Pulsed
(Note 1)
Value
1200
64
40
160
20
60
±20
400
160
-55 to +150
300
Units
V
A
A
A
A
A
V
W
W
℃
℃
Diode Forward Current – Continuous (T
C
= 100℃)
Diode Maximum Forward Current
Gate-Emitter Voltage
Power Dissipation
Power Dissipation
– Continuous (T
C
= 25℃)
– Continuous (T
C
= 100℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Notes:
1. Pulse width limited by max junction temperature
Thermal Resistance Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(Diode)
R
θJA
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Parameter
Typ.
--
--
--
Max.
0.31
1.11
40
℃/W
Units
◎
SEMIHOW REV.A0,May 2014
HGA40N120FV
Electrical Characteristics of the IGBT
T
C
=25
°C
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GE(th)
V
CE(sat)
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE
= V
GE
, I
C
= 1.5 mA
V
GE
= 15 V,
I
C
= 40 A
T
C
= 25℃
T
C
= 125℃
4.0
--
--
--
2.0
2.5
7.0
2.6
--
V
V
Off Characteristics
BV
CES
I
CES
I
GES
Collector-Emitter Breakdown
Voltage
Zero Gate Voltage Collector
Current
Gate-Emitter Leakage Current
V
GE
= 0 V, I
C
= 250 uA
V
CE
= 1200 V, V
GE
= 0 V
V
GE
=
±20
V, V
CE
= 0 V
1200
--
--
--
--
--
--
1
±250
V
mA
㎁
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30 V, V
GE
= 0 V,
f = 1.0 MHz
--
--
--
9150
295
76
--
--
--
㎊
㎊
㎊
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
Q
g
Q
ge
Q
gc
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V
CC
= 600V, I
C
= 40 A,
V
GE
= 15 V
V
CC
= 600 V, I
C
= 40 A,
R
G
= 10
Ω, V
GE
= 15V
Inductive load, T
C
= 125℃
V
CC
= 600 V, I
C
= 40 A,
R
G
= 10
Ω, V
GE
= 15V
Inductive load, T
C
= 25℃
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
50
65
295
85
2.3
2.2
4.5
90
70
415
165
2.65
3.2
5.85
225
55
90
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
㎱
㎱
㎱
㎱
mJ
mJ
mJ
㎱
㎱
㎱
㎱
mJ
mJ
mJ
nC
nC
nC
◎
SEMIHOW REV.A0,May 2014
HGA40N120FV
Electrical Characteristics of the Diode
V
FM
t
rr
I
rr
Q
rr
Diode Forward Voltage
I
F
= 40 A
T
C
= 25℃
T
C
= 125℃
T
C
= 25℃
T
C
= 125℃
I
F
= 40 A,
di/dt = 200 A/μs
T
C
= 25℃
T
C
= 125℃
T
C
= 25℃
T
C
= 125℃
--
--
--
--
--
--
--
--
2.2
2.0
200
325
23
43
2500
7000
--
--
300
--
35
--
--
--
V
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
ns
A
nC
◎
SEMIHOW REV.A0,May 2014
HGA40N120FV
IGBT Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage Characteristics
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Figure 4. Load Current vs. Frequency
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
◎
SEMIHOW REV.A0,May 2014
HGA40N120FV
IGBT Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs.
Gate Resistance
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
◎
SEMIHOW REV.A0,May 2014
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