Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28
| 参数名称 | 属性值 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 28 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A001.A.2.C |
| JESD-30 代码 | R-CDIP-T28 |
| JESD-609代码 | e0 |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | CACHE SRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 28 |
| 字数 | 16384 words |
| 字数代码 | 16000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 16KX4 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 认证状态 | Not Qualified |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | DUAL |
| IDT61595L30CB | IDT61595S25P | IDT61595S25C | IDT61595L25P | IDT61595S25D | IDT61595L25D | IDT61595L25C | IDT61595L30DB | IDT61595S30CB | IDT61595S30DB | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, CMOS, PDIP28, DIP-28 | Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, CMOS, PDIP28, DIP-28 | Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28 | Cache SRAM, 16KX4, CMOS, CDIP28, DIP-28 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 零件包装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 包装说明 | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, | DIP, |
| 针数 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow | unknow |
| ECCN代码 | 3A001.A.2.C | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| JESD-30 代码 | R-CDIP-T28 | R-PDIP-T28 | R-CDIP-T28 | R-PDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-CDIP-T28 | R-GDIP-T28 | R-CDIP-T28 | R-GDIP-T28 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bi | 65536 bi |
| 内存集成电路类型 | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
| 字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| 字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 | 16000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 125 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 125 °C | 125 °C | 125 °C |
| 组织 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | MILITARY | MILITARY | MILITARY |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
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