StrongIRFET
IRF8301MTRPbF
Ultra-low R
DS(on)
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Ultra-low Package Inductance
l
Optimized for high speed switching or high current
switch (Power Tool)
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques
l
Typical values (unless otherwise specified)
DirectFET Power MOSFET
R
DS(on)
1.3mΩ@10V
V
DSS
V
GS
R
DS(on)
1.9mΩ@ 4.5V
30V max ±20V max
MT
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
DirectFET ISOMETRIC
Description
The IRF8301MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
very low on-state resistance in a package that has the footprint of an SO-8 or a PQFN 5x6mm and only 0.7mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF8301MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses and very high current carrying capability make this product ideal for power tools.
Ordering Information
Base Part Number
IRF8301MPbF
Package Type
DirectFET MT
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF8301MTRPbF
Absolute Maximum Ratings
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
6
Typical RDS(on) (mΩ)
Parameter
Max.
Units
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
±20
34
27
192
250
260
25
VGS, Gate-to-Source Voltage (V)
A
mJ
A
5.0
4.0
3.0
2.0
1.0
0.0
0
10
20
30
40
50
60
QG, Total Gate Charge (nC)
ID= 25A
VDS= 24V
VDS= 15V
5
4
3
2
1
0
0
5
10
T J = 25°C
ID = 32A
T J = 125°C
15
20
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
1
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© 2013 International Rectifier
September 6, 2013
IRF8301MTRPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
1.3
1.9
1.7
-6.0
–––
–––
–––
–––
–––
51
12
5.4
16
18
21
28
1.0
20
30
25
17
6140
1270
590
Max. Units
–––
–––
1.5
2.4
2.35
–––
1.0
150
100
-100
–––
77
–––
–––
–––
–––
–––
–––
3.0
–––
–––
–––
–––
–––
–––
–––
pF
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 32A
V
GS
= 4.5V, I
D
V
V
DS
= V
GS
, I
D
= 150µA
mV/°C
µA
nA
S
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 25A
V
DS
= 15V
nC
V
GS
= 4.5V
I
D
= 25A
See Fig. 15
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 25A
R
G
= 1.8Ω
See Fig. 17
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
i
= 25A
i
ns
Ãi
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.77
27
45
Max. Units
110
A
250
1.0
41
68
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
T
J
= 25°C, I
F
= 25A
di/dt = 500A/µs
I
SM
V
SD
t
rr
Q
rr
Ãg
i
i
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.82mH, R
G
= 25Ω, I
AS
= 25A.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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© 2013 International Rectifier
September 6, 2013
IRF8301MTRPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.8
1.8
89
270
-40 to + 150
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
el
Junction-to-Ambient
jl
Junction-to-Ambient
kl
Junction-to-Case
fl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.4
–––
Units
°C/W
Junction-to-PCB Mounted
Linear Derating Factor
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
eÃ
W/°C
Thermal Response ( Z thJA )
10
1
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
10
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 4.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
3
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© 2013 International Rectifier
September 6, 2013
IRF8301MTRPbF
Notes:
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
4
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© 2013 International Rectifier
September 6, 2013
IRF8301MTRPbF
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
2.5V
10
1
2.5V
≤
60µs PULSE WIDTH
0.1
0.1
1
Tj = 25°C
1
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
1
10
100
10
100
Fig 5.
Typical Output Characteristics
1000
VDS = 15V
≤60µs
PULSE WIDTH
100
T J = 150°C
T J = 25°C
T J = -40°C
Typical RDS(on) (Normalized)
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 6.
Typical Output Characteristics
2.0
ID = 32A
V GS = 10V
V GS = 4.5V
1.5
ID, Drain-to-Source Current (A)
10
1.0
1
0.1
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 7.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
Fig 8.
Normalized On-Resistance vs. Temperature
5
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 8.0V
Vgs = 10V
T J = 25°C
10000
Ciss
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
4
C, Capacitance(pF)
3
Coss
1000
Crss
2
1
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
0
50
100
150
200
ID, Drain Current (A)
Fig 9.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 10.
Typical On-Resistance vs.
Drain Current and Gate Voltage
September 6, 2013
5
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© 2013 International Rectifier
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