PD - 97065B
IRF7905PbF
HEXFET
®
Power MOSFET
Applications
l
Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
l
Improved Body Diode Reverse Recovery
l
100% Tested for R
G
l
Lead-Free
V
DSS
30V
Q1 21.8m
:
@V
GS
= 10V
Q2 17.1m
:
@V
GS
= 10V
'
R
DS(on)
max
I
D
7.8A
8.9A
6
*
6
*
'
'
'
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Q1 Max.
30
± 20
7.8
6.2
62
2.0
1.3
0.016
Q2 Max.
Units
V
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
8.9
7.1
71
2.0
1.3
0.016
-55 to + 150
A
W
W/°C
°C
Thermal Resistance
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
g
Junction-to-Ambient
fg
Q1 Max.
42
62.5
Q2 Max.
42
62.5
Units
°C/W
www.irf.com
1
07/09/08
IRF7905PbF
BV
DSS
∆ΒV
DSS
/∆T
J
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Q1&Q2
Q1
Q2
Q1
Q2
Min.
30
–––
–––
–––
–––
–––
–––
1.35
–––
–––
–––
–––
–––
–––
15
18
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.024
0.024
17.4
23.4
13.7
17.1
1.8
-5.0
-5.0
–––
–––
–––
–––
–––
–––
4.6
6.9
0.9
1.5
0.6
0.8
1.7
2.5
1.4
2.1
2.3
3.3
2.9
4.5
3.1
3.1
5.2
6.2
8.3
9.3
6.9
8.1
3.4
3.4
600
910
130
190
78
95
Max.
–––
–––
–––
21.8
29.3
17.1
21.3
2.25
–––
–––
1.0
150
100
-100
–––
–––
6.9
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.9
4.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
10
13
2.5
4.0
Max.
2.8
2.8
62
71
1.0
1.0
15
20
3.8
6.0
Conditions
Units
V
GS
= 0V, I
D
= 250µA
V
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 7.8A
V
GS
= 4.5V, I
D
= 6.2A
V
GS
= 10V, I
D
= 8.9A
V
GS
= 4.5V, I
D
= 7.1A
V
DS
= V
GS
, I
D
= 25µA
R
DS(on)
Static Drain-to-Source On-Resistance
mΩ
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q1&Q2
Q1
Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
V
mV/°C
µA
nA
S
e
e
e
e
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 6.2A
V
DS
= 15V, I
D
= 7.1A
nC
Q1
V
DS
= 15V
V
GS
= 4.5V, I
D
= 6.2A
Q2
V
DS
= 15V
V
GS
= 4.5V, I
D
= 7.1A
nC
V
DS
= 16V, V
GS
= 0V
Ω
Q1
V
DD
= 15V, V
GS
= 4.5V
I
D
= 6.2A
ns
Q2
V
DD
= 15V, V
GS
= 4.5V
I
D
= 7.1A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
pF
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
d
Q1 Max.
12
6.2
Q2 Max.
18
7.1
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Units
Conditions
A
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 6.1A, V
GS
= 0V
V
T
J
= 25°C, I
S
= 7.1A, V
GS
= 0V
Q1 T
J
= 25°C, I
F
= 6.2A,
ns
V
DD
= 15V, di/dt = 100A/µs
nC Q2 T
J
= 25°C, I
F
= 7.1A,
V
DD
= 15V, di/dt = 100A/µs
Ã
Reverse Recovery Time
Reverse Recovery Charge
e
e
e
e
2
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Typical Characteristics
Q1 - Control FET
100
TOP
IRF7905PbF
Q2 - Synchronous FET
100
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
10
BOTTOM
1
1
0.1
0.1
2.3V
≤
60µs PULSE WIDTH
Tj = 25°C
2.3V
0.01
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
0.01
10
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
100
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
Fig 2.
Typical Output Characteristics
100
TOP
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
1
1
2.3V
2.3V
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
100.0
100.0
Fig 4.
Typical Output Characteristics
ID, Drain-to-Source Current
(Α)
10.0
ID, Drain-to-Source Current
(Α)
TJ = 150°C
10.0
TJ = 150°C
1.0
TJ = 25°C
VDS = 15V
≤
60µs PULSE WIDTH
1.0
TJ = 25°C
VDS = 15V
≤
60µs PULSE WIDTH
0.1
1.0
2.0
3.0
4.0
5.0
6.0
0.1
1.0
2.0
3.0
4.0
5.0
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
Fig 6.
Typical Transfer Characteristics
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3
IRF7905PbF
Q1 - Control FET
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Typical Characteristics
Q2 - Synchronous FET
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
C, Capacitance (pF)
1000
C, Capacitance (pF)
Coss = Cds + Cgd
Ciss
Ciss
Coss
100
Coss
100
Crss
Crss
10
1
10
100
10
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 8.
Typical Capacitance vs. Drain-to-Source Voltage
12
VGS, Gate-to-Source Voltage (V)
12
VGS, Gate-to-Source Voltage (V)
ID= 6.3A
10
8
6
4
2
0
0
2
VDS= 25V
VDS= 16V
VDS= 7.6V
ID= 7.1A
10
8
6
4
2
0
VDS= 25V
VDS= 16V
VDS= 7.6V
4
6
8
10
0
4
8
12
16
QG Total Gate Charge (nC)
QG, Total Gate Charge (nC)
Fig 9.
Typical Gate Charge vs. Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Fig 10.
Typical Gate Charge vs. Gate-to-Source
Voltage
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
100
1msec
ID, Drain-to-Source Current (A)
100
1msec
10
100µsec
10
100µsec
1
10msec
1
10msec
0.1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
1
100msec
0.1
TA = 25°C
Tj = 150°C
Single Pulse
0.1
1
100msec
0.01
0.01
10
100
0.01
0.01
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 11.
Maximum Safe Operating Area
Fig 12.
Maximum Safe Operating Area
4
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Typical Characteristics
Q1 - Control FET
2.0
2.0
IRF7905PbF
Q2 - Synchronous FET
ID = 8.9A
RDS(on) , Drain-to-Source On Resistance
(Normalized)
RDS(on), Drain-to-Source On Resistance
(Normalized)
ID = 7.8A
VGS = 10V
1.5
VGS = 10V
1.5
1.0
1.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
Fig 13.
Normalized On-Resistance vs. Temperature
100.0
TJ , Junction Temperature (°C)
Fig 14.
Normalized On-Resistance vs. Temperature
100
TJ , Junction Temperature (°C)
ISD, Reverse Drain Current (A)
ISD , Reverse Drain Current (A)
10.0
TJ = 150°C
10
TJ = 150°C
1.0
1
TJ = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TJ = 25°C
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 15.
Typical Source-Drain Diode Forward Voltage
(
RDS (on), Drain-to -Source On Resistance m
Ω)
50
Fig 16.
Typical Source-Drain Diode Forward Voltage
(
RDS (on), Drain-to -Source On Resistance m
Ω)
50
ID = 7.8A
40
ID = 8.9A
40
30
TJ = 125°C
30
20
TJ = 25°C
TJ = 125°C
20
10
2
4
6
8
10
10
2
4
6
TJ = 25°C
8
10
VGS, Gate-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig 17.
Typical On-Resistance vs.Gate Voltage
Fig 18.
Typical On-Resistance vs.Gate Voltage
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