IRF7805TRPbF-1
HEXFET
®
Chip-Set for DC-DC Converters
V
DSS
R
DS(on)
(@ V
GS
=4.5V)
Q
g (typical)
I
D
(@ T
A
= 25°C
30
11
22
13
V
m
nC
A
S
S
S
G
A
A
D
D
D
D
1
2
8
7
3
4
6
5
Top View
SO-8
IRF7805PbF
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Base part number
IRF7805PbF-1
Package Type
SO-8
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRF7805TRPbF-1
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-Source Voltage
Gate-to-Source Voltage
Parameter
Max.
30
± 12
13
10
100
2.5
1.6
0.02
-55 to + 150
Units
V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
A
W
W/°C
°C
Thermal Resistance
Symbol
R
JL
R
JA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
2016-08-23
Static @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
30
–––
1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.5
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
IRF7805TRPbF-1
Typ. Max. Units
Conditions
––– –––
V V
GS
= 0V, I
D
= 250µA
9.2
11
m V
GS
= 4.5V, I
D
= 7.0A
–––
3.0
V V
DS
= V
GS
, I
D
= 250µA
–––
70
V
DS
= 30V, V
GS
= 0V
µA V
DS
= 24V, V
GS
= 0V
–––
10
––– 150
V
DS
= 24V,V
GS
= 0V,T
J
= 100°C
––– 100
V
GS
= 12V
nA
––– -100
V
GS
= -12V
22
3.7
1.4
6.8
8.2
30
–––
16
20
38
16
31
–––
–––
–––
11.5
36
1.7
–––
–––
–––
–––
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Total Gate Charge
Q
g
Q
gs1
Pre -Vth Gate-to-Source Charge
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
sw
Switch Charge (Qgs2 + Qgd)
Q
oss
Output Charge
R
G
Gate Resistance
t
d(on)
Turn-On Delay Time
Rise Time
t
r
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
Q
rr
Q
rr
Reverse Recovery Charge
Reverse Recovery Charge
V
GS
= 5.0V
nC
V
DS
= 16V
I
D
= 7.0A
nC V
DS
= 16V, V
GS
= 0V
V
DD
= 16V,V
GS
= 4.5V
I
D
= 7.0A
ns
R
G
= 2
Resistive Load
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C,I
S
= 7.0A,V
GS
= 0V
di/dt = 700A/µs
V
DS
=16V, V
GS
= 0V, I
S
= 7.0A
di/dt = 700A/µs (with 10BQ040)
V
DS
=16V, V
GS
= 0V, I
S
= 7.0A
Typ. Max. Units
–––
–––
–––
88
55
2.5
A
106
1.2
–––
nC
–––
V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
300µs;
duty cycle
2%.
When mounted on 1" in square copper board, t < 10 sec.
Typ = measured - Q
OSS
R
is measured at T
J
of approximately 90°C.
Devices are 100% tested to these parameters.
2
2016-08-23
IRF7805TRPbF-1
Fig. 1
Normalized On-Resistance
vs. Temperature
Fig. 2
Typical Gate Charge vs.
Gate-to-Source Voltage
10
I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
1
T
J
= 25
°
C
0.1
0.4
V
GS
= 0 V
0.5
0.6
0.7
0.8
0.9
V
SD
,Source-to-Drain Voltage (V)
Fig.
3 Typical Rds(on) vs. Gate-to-Source Voltage
Fig. 4
Typical Source-Drain Diode Forward Voltage
Fig 5.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
3
2016-08-23
IRF7805TRPbF-1
SO-8 Package Outline
(Dimensions are shown in millimeters (inches)
D IM
A
A1
b
IN C H ES
M IN
.0532
.0040
.013
.0075
.189
.1497
M AX
.0688
.0098
.020
.0098
.1968
.1574
M ILLIM ETERS
M IN
1.35
0.10
0.33
0.19
4.80
3.80
M AX
1.75
0.25
0.51
0.25
5.00
4.00
D
A
5
B
6
E
8
7
6
5
H
0.25 [ .010]
A
c
D
E
e
e1
H
K
L
y
1
2
3
4
.050 B ASIC
.025 B ASIC
.2284
.0099
.016
0°
.2440
.0196
.050
8°
1.27 B ASIC
0.635 BASIC
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
6X
e
e1
A
C
0.10 [ .004]
y
K x 45°
8X b
0.25 [ .010]
C
A
A1
B
8X L
7
8X c
N O TE S :
1.
2.
3.
4.
5
6
7
D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 .
C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R
D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] .
O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A .
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] .
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S .
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] .
D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O
A S U B S TR A TE .
3 X 1 .2 7 [ .0 5 0 ]
6 .4 6 [ .2 5 5 ]
F O O T P R IN T
8 X 0 .7 2 [ .0 2 8 ]
8 X 1 .7 8 [ .0 7 0 ]
SO-8 Part Marking Information
E X A M P L E : T H IS IS A N IR F 7 1 0 1 (M O S F E T )
D A T E C O D E (Y W W )
P = D E S IG N A T E S L E A D -F R E E
P R O D U C T (O P T IO N A L )
Y = L A S T D IG IT O F T H E Y E A R
W W = W EEK
A = A S S E M B L Y S IT E C O D E
LO T C O D E
PART N U M BER
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
XXXX
F7101
4
2016-08-23
IRF7805TRPbF-1
SO-8 Tape and Reel
(
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
5
2016-08-23
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