Transistors with built-in Resistor
UNR121x Series
(UN121x Series)
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
(0.4)
6.9
±0.1
(1.5)
(1.5)
3.5
±0.1
2.5
±0.1
(1.0)
(1.0)
2.0
±0.2
2.4
±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
■
Features
1.0
±0.1
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
UNR1210
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
UNR1219
UNR121D
UNR121E
UNR121F
UNR121K
UNR121L
(UN1210)
(UN1211)
(UN1212)
(UN1213)
(UN1214)
(UN1215)
(UN1216)
(UN1217)
(UN1218)
(UN1219)
(UN121D)
(UN121E)
(UN121F)
(UN121K)
(UN121L)
(R
1
)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
10 kΩ
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
3
2
1
1.25
±0.05
■
Resistance by Part Number
Collector-emitter voltage (Base open)
Collector current
/D
is
Collector-base voltage (Emitter open)
co
Parameter
nt
in
■
Absolute Maximum Ratings
T
a
=
25°C
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Total power dissipation
Junction temperature
M
ai
Storage temperature
T
stg
Pl
e
Publication date: October 2003
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(0.85)
0.45
±0.05
0.55
±0.1
(2.5)
(2.5)
1: Base
2: Collector
3: Emitter
M-A1 Package
Internal Connection
R
1
B
C
R
2
E
ue
Rating
50
50
Unit
V
V
ce
100
400
150
mA
°C
an
mW
°C
nt
en
−55
to
+150
Note) The part numbers in the parenthesis show conventional part number.
SJH00003BED
4.1
±0.2
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board
R 0.9
R 0.7
4.5
±0.1
1
UNR121x Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
UNR1211
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
Min
50
50
0.1
0.5
0.5
0.2
0.1
0.01
1.0
1.5
2.0
h
FE
V
CE
=
10 V, I
C
=
5 mA
35
60
80
160
30
20
V
CE(sat)
V
OH
V
OL
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 kΩ
f
T
R
1
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
−30%
80
10
22
47
4.7
0.51
1
R
1
/R
2
0.8
0.17
0.08
1.0
0.21
0.1
4.7
2.14
0.47
2.13
1.2
0.25
0.12
+30%
MHz
kΩ
4.9
0.2
0.25
V
V
V
460
Typ
Max
Unit
V
V
µA
µA
mA
cutoff current UNR1212/1214/121D/121E
(Collector open) UNR1213
UNR1210/1215/1216/1217
UNR121F/121K
UNR1219
UNR1218/121L
Forward current UNR1211
transfer ratio
UNR1212/121E
UNR1213/1214
UNR1210
*
/1215
*
/1216
*
/
1217
*
UNR1219/121D/121F
UNR1218/121K/121L
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
UNR1213/121K
UNR121D
UNR121E
Transition frequency
Input resistance UNR1211/1214/1215/121K
UNR1212/1217
UNR1210/1213/121D/121E
UNR1216/121F/121L
UNR1218
UNR1219
Resistance ratio UNR1211/1212/1213/121L
UNR1214
UNR1218/1219
UNR121D
UNR121E
UNR121F
UNR121K
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification (UNR1110/1115/1116/1117)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
SJH00003BED
UNR121x Series
Common characteristics chart
P
T
T
a
500
Total power dissipation P
T
(mW)
400
300
200
100
0
0
40
80
120
160
Ambient temperature T
a
(°C)
Characteristics charts of UNR1210
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
60
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
V
CE(sat)
I
C
100
h
FE
I
C
400
V
CE
=
10 V
I
C
/ I
B
=
10
50
Forward current transfer ratio h
FE
Collector current I
C
(mA)
10
300
T
a
=
75°C
25°C
200
−25°C
100
40
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.1 mA
30
0.3 mA
1
T
a
=
75°C
25°C
0.1
−25°C
0.01
0.1
20
10
0
0
1
10
100
0
2
4
6
8
10
12
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
100
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
3
10
2
Input voltage V
IN
(V)
10
3
10
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00003BED
3
UNR121x Series
Characteristics charts of UNR1211
I
C
V
CE
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
10 V
160
Collector current I
C
(mA)
120
0.7 mA
0.6 mA
0.5 mA
0.4 mA
10
Forward current transfer ratio h
FE
300
T
a
=
75°C
80
0.3 mA
1
25°C
0.1
−25˚C
200
25°C
100
−25°C
0.2 mA
40
T
a
=
75°C
0.1 mA
0
0
2
4
6
8
10
12
0.01
0.1
1
10
100
0
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
100
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
Input voltage V
IN
(V)
10
3
10
3
10
2
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR1212
I
C
V
CE
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
120
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
=
10 V
160
Collector current I
C
(mA)
0.7 mA
0.6 mA
0.5 mA
0.4 mA
10
Forward current transfer ratio h
FE
300
T
a
=
75°C
80
0.3 mA
1
T
a
=
75°C
200
25°C
−25°C
25°C
0.1
−25°C
40
0.2 mA
100
0.1 mA
0
0
2
4
6
8
10
12
0.01
0.1
1
10
100
0
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
4
SJH00003BED
UNR121x Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
100
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
3
10
2
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
10
3
10
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR1213
I
C
V
CE
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
10 V
160
Forward current transfer ratio h
FE
Collector current I
C
(mA)
120
10
300
T
a
=
75°C
25°C
−25°C
1
200
40
0.2 mA
25°C
0.1
−25°C
0.01
0.1
T
a
=
75°C
100
0.1 mA
0
0
2
4
6
8
10
12
1
10
100
0
1
10
100
1 000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
10
4
V
O
=
5 V
T
a
=
25°C
100
V
IN
I
O
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(µA)
4
Input voltage V
IN
(V)
10
3
10
3
10
2
1
2
10
0.1
1
0
0.1
1
10
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00003BED
5
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