MJ21193 - PNP
MJ21194 - NPN
Silicon Power Transistors
The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
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•
•
•
•
•
Total Harmonic Distortion Characterized
High DC Current Gain
Excellent Gain Linearity
High SOA
These Devices are Pb−Free and are RoHS Compliant*
16 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 250 WATTS
SCHEMATIC
PNP
NPN
CASE 3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
−
1.5 V
Collector Current
−
Continuous
Collector Current
−
Peak (Note 1)
Base Current
−
Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
CM
I
B
P
D
T
J
, T
stg
Value
250
400
5
400
16
30
5
250
1.43
−
65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/°C
°C
1
BASE
CASE 3
1
BASE
EMITTER 2
EMITTER 2
3
MARKING
DIAGRAM
1
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5
ms,
Duty Cycle
≤
10%. (continued)
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MJ2119xG
AYYWW
MEX
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
0.7
Unit
°C/W
MJ2119x = Device Code
x = 3 or 4
G
= Pb−Free Package
A
= Assembly Location
YY
= Year
WW
= Work Week
MEX
= Country of Origin
ORDERING INFORMATION
Device
MJ21193G
MJ21194G
Package
TO−3
(Pb−Free)
TO−3
(Pb−Free)
Shipping
†
100 Units / Tray
100 Units / Tray
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
September, 2013
−
Rev. 6
1
Publication Order Number:
MJ21193/D
MJ21193
−
PNP
MJ21194
−
NPN
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 80 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, I
B
= 5 Adc)
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
(Matched pair h
FE
= 50 @ 5 A/5 V)
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
NOTE:
Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤2%
h
FE
unmatched
h
FE
matched
T
HD
−
−
f
T
C
ob
4
−
0.8
0.08
−
−
−
−
−
500
MHz
pF
%
h
FE
75
25
8
−
−
−
−
2.2
Vdc
Vdc
−
−
−
−
1.4
4
I
S/b
Adc
5
2.5
−
−
−
−
V
CEO(sus)
I
CEO
I
EBO
I
CEX
250
−
−
−
−
−
−
−
100
100
100
Vdc
mAdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
V
BE(on)
V
CE(sat)
PNP MJ21193
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
6.5
6.0
5.5
5V
5.0
4.5
4.0
3.5
3.0
0.1
T
J
= 25°C
f
test
= 1 MHz
1.0
I
C
COLLECTOR CURRENT (AMPS)
10
V
CE
= 10 V
f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.1
T
J
= 25°C
f
test
= 1 MHz
NPN MJ21194
10 V
V
CE
= 5 V
1.0
I
C
COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
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MJ21193
−
PNP
MJ21194
−
NPN
TYPICAL CHARACTERISTICS
PNP MJ21193
1000
1000
NPN MJ21194
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
T
J
= 100°C
25°C
- 25°C
T
J
= 100°C
25°C
100
- 25°C
100
V
CE
= 20 V
10
0.1
10
0.1
V
CE
= 20 V
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
Figure 3. DC Current Gain, V
CE
= 20 V
Figure 4. DC Current Gain, V
CE
= 20 V
PNP MJ21193
1000
1000
NPN MJ21194
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
T
J
= 100°C
25°C
100
- 25°C
T
J
= 100°C
25°C
100
- 25°C
V
CE
= 5 V
10
0.1
10
0.1
V
CE
= 20 V
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
1.0
10
I
C
COLLECTOR CURRENT (AMPS)
100
Figure 5. DC Current Gain, V
CE
= 5 V
PNP MJ21193
30
1.5 A
I C, COLLECTOR CURRENT (A)
25
20
15
0.5 A
10
5.0
T
J
= 25°C
0
0
0
5.0
10
15
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
0
I
B
= 2 A
I C, COLLECTOR CURRENT (A)
35
Figure 6. DC Current Gain, V
CE
= 5 V
NPN MJ21194
I
B
= 2 A
30
1.5 A
25
1A
20
15
10
5.0
T
J
= 25°C
5.0
10
15
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25
0.5 A
1A
Figure 7. Typical Output Characteristics
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Figure 8. Typical Output Characteristics
MJ21193
−
PNP
MJ21194
−
NPN
TYPICAL CHARACTERISTICS
PNP MJ21193
3.0
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
0
0.1
V
CE(sat)
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
V
BE(sat)
T
J
= 25°C
I
C
/I
B
= 10
1.4
1.2
SATURATION VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.1
V
CE(sat)
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
T
J
= 25°C
I
C
/I
B
= 10
NPN MJ21194
V
BE(sat)
Figure 9. Typical Saturation Voltages
Figure 10. Typical Saturation Voltages
PNP MJ21193
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
10
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
10
T
J
= 25°C
NPN MJ21194
T
J
= 25°C
1.0
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
V
CE
= 20 V (SOLID)
1.0
V
CE
= 5 V (DASHED)
0.1
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
0.1
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 11. Typical Base−Emitter Voltage
Figure 12. Typical Base−Emitter Voltage
100
10
1 SEC
T
C
= 25°C
1.0
0.1
1.0
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
−
V
CE
lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dissip-
ation than the curves indicate.
The data of Figure 13 is based on T
J(pk)
= 200°C; T
C
is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
1000
IC, COLLECTOR CURRENT (AMPS)
10
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
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MJ21193
−
PNP
10000
T
J
= 25°C
C, CAPACITANCE (pF)
C
ib
C, CAPACITANCE (pF)
MJ21194
−
NPN
10000
T
J
= 25°C
C
ib
1000
C
ob
1000
C
ob
f
(test)
= 1 MHz
100
0.1
1.0
10
100
100
0.1
f
(test)
= 1 MHz
1.0
10
100
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 14. MJ21193 Typical Capacitance
Figure 15. MJ21194 Typical Capacitance
1.2
1.1
T , TOTAL HARMONIC
HD
DISTORTION (%)
1.0
0.9
0.8
0.7
0.6
10
100
1000
FREQUENCY (Hz)
10000
100000
Figure 16. Typical Total Harmonic Distortion
+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
50
W
DUT
0.5
W
SOURCE
AMPLIFIER
0.5
W
8.0
W
DUT
-50 V
Figure 17. Total Harmonic Distortion Test Circuit
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