FastIRFET™
IRFH7191PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
Q
g (typical)
R
g (typical)
(@T
C (Bottom)
= 25°C)
I
D
100
8.0
26
1.0
80
V
m
nC
A
PQFN 5X6 mm
Applications
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Secondary Side Synchronous Rectifier
Hot Swap and Active O-Ring
Features
Low R
DS(ON)
(< 8.0m)
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg Tested
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Base part number
IRFH7191PbF
PQFN 5mm x 6 mm
Package Type
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7191TRPbF
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
15
80
51
234
3.6
104
0.03
-55 to + 150
W/°C
°C
W
A
Units
V
Absolute Maximum Ratings
Notes
through
are on page 8
1
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September 08, 2014
IRFH7191PbF
Min.
100
–––
–––
2.0
–––
–––
–––
–––
112
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
103
6.2
–––
-4.9
–––
–––
–––
–––
26
4.7
1.9
8.3
12
10
80
1.0
4.5
6.1
10.6
3.6
1685
836
16
Max.
–––
–––
8.0
3.6
–––
1.0
100
-100
–––
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
mV/°C
m
V
mV/°C
µA
nA
S
nC
nC
ns
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 48A
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 80V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 48A
V
DS
= 50V
V
GS
= 10V
I
D
= 48A
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
BV
DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
V
GS(th)
I
DSS
Drain-to-Source Leakage Current
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs1
Pre-Vth Gate-to-Source Charge
Q
gs2
Post-Vth Gate-to-Source Charge
Q
gd
Gate-to-Drain Charge
Q
godr
Gate Charge Overdrive
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
Q
oss
Output Charge
R
G
Gate Resistance
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
Fall Time
t
f
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
V
DS
= 50V, V
GS
= 0V
V
DD
= 50V, V
GS
= 10V
I
D
= 48A
R
G
= 1.0
V
GS
= 0V
pF V
DS
= 50V
ƒ = 1.0MHz
Min.
Typ.
Max. Units
Conditions
–––
–––
80
A
MOSFET symbol
showing the
integral reverse
–––
–––
234
p-n junction diode.
–––
0.8
1.3
V
T
J
= 25°C, I
S
= 48A, V
GS
=0V
–––
63
95
ns T
J
= 25°C, I
F
= 48A, V
DD
= 50V
–––
126
190
nC di/dt = 100A/µs
D
G
S
Typ.
–––
–––
Parameter
Typ.
–––
–––
–––
–––
Max.
269
48
Max.
1.2
22
35
20
Units
mJ
A
Units
°C/W
Thermal Resistance
R
JC
(Bottom) Junction-to-Case
Junction-to-Case
R
JC
(Top)
R
JA
R
JA
(<10s)
Junction-to-Ambient
Junction-to-Ambient
2
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September 08, 2014
1000
TOP
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
IRFH7191PbF
1000
TOP
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
BOTTOM
100
BOTTOM
4.5V
10
10
4.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
1
0.1
1
60µs PULSE WIDTH
Tj = 150°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
2.0
ID = 48A
VGS = 10V
1.5
ID, Drain-to-Source Current (A)
100
10
T J = 150°C
1
VDS = 50V
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
7
T J = 25°C
1.0
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14
ID= 48A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
10000
C, Capacitance (pF)
VDS= 80V
VDS= 50V
VDS= 20V
1000
Ciss
Coss
Crss
100
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
3
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Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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September 08, 2014
1000
100
IRFH7191PbF
100µsec
ISD, Reverse Drain Current (A)
100
T J = 150°C
10
T J = 25°C
ID, Drain-to-Source Current (A)
1msec
10
OPERATION IN
THIS AREA LIMITED
BY RDS(on)
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0.1
1
DC
1
1
VGS = 0V
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
100
VSD, Source-to-Drain Voltage (V)
VDS, Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
100
VGS(th) , Gate threshold Voltage (V)
Fig 8.
Maximum Safe Operating Area
4.0
3.5
3.0
2.5
2.0
1.5
1.0
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
90
80
ID, Drain Current (A)
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs. Case Temperature
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Threshold Voltage vs. Temperature
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.0001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRFH7191PbF
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 125°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j
= 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 12.
Typical Avalanche Current vs. Pulse Width
RDS(on), Drain-to -Source On Resistance (m
)
20
18
16
14
12
10
8
6
4
2
0
2
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 125°C
ID = 48A
EAS , Single Pulse Avalanche Energy (mJ)
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
ID
TOP
3A
5A
BOTTOM 48A
VGS, Gate -to -Source Voltage (V)
Fig 13.
On–Resistance vs. Gate Voltage
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
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September 08, 2014
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