Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s. . . . . . . . . . . . T
L
Package Body for 10s, see TB334 . . . . . . . . . . . . . . . . . .T
pkg
250
250
14
8.8
56
±20
125
1.0
550
-55 to 150
300
260
IRF245
250
250
13
8.0
52
±20
125
1.0
550
-55 to 150
300
260
IRF246
275
275
14
8.8
56
±20
125
1.0
550
-55 to 150
300
260
IRF247
275
275
13
8.0
52
±20
125
1.0
550
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
V
GS
= 0V, I
D
= 250µA
(Figure 10)
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
IRF244, IRF245
IRF246, IRF247
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
250
275
-
-
-
-
-
-
-
4.0
25
250
V
V
V
µA
µA
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V,
T
J
= 125
o
C
2.0
-
-
On-State Drain Current (Note 2)
IRF244, IRF246
IRF245, IRF247
Gate to Source Leakage Current
Drain to Source On-State Resistance (Note 2)
IRF244, IRF246
IRF245, IRF247
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
I
D(ON)
V
DS
> I
D(ON) x
r
DS(ON)MAX
, V
GS
= 10V
14
13
-
-
-
-
-
±100
A
A
nA
I
GSS
r
DS(ON)
V
GS
=
±20V
V
GS
= 10V, I
D
= 8A, (Figures 8, 9)
-
-
-
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
gs
Q
gd
V
GS
= 10V, I
D
= 14A, V
DS
= 0.8 x Rated
BV
DSS
, I
g(REF)
= 1.5mA,
(Figures 14, 19, 20) Gate Charge is
Essentially Independent of Operating
Temperature
V
DS
≥
50V, I
D
= 8A, (Figure 12)
V
DD
= 125V, I
D
≈
14A, R
G
= 9.1Ω, R
L
= 8.9Ω
(Figures 17, 18) MOSFET Switching Times
are Essentially Independent of Operating
Temperature
6.7
-
-
-
-
-
0.20
0.24
10
16
67
53
49
39
0.28
0.34
-
24
100
80
74
59
Ω
Ω
S
ns
ns
ns
ns
nC
-
-
6.6
20
-
-
nC
nC
5-2
IRF244, IRF245, IRF246, IRF247
Electrical Specifications
PARAMETER
Input Capacitance
Output Capacitance
Reverse-Transfer Capacitance
Internal Drain Inductance
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
SYMBOL
C
ISS
C
OSS
C
RSS
L
D
Measured Between
the Contact Screw on
the Flange that is
Closer to Source and
Gate Pins and the
Center of Die
Measured From The
Source Lead, 6mm
(0.25in) From the
Flange and the
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
D
L
D
TEST CONDITIONS
V
GS
= 0V, V
DS
= 25V, f = 1.0MHz
(Figure 11)
MIN
-
-
-
-
TYP
1300
320
69
5.0
MAX
-
-
-
-
UNITS
pF
pF
pF
nH
Internal Source Inductance
L
S
-
G
L
S
S
12.5
-
nH
Junction to Case
Junction to Ambient
R
θJC
R
θJA
Free Air Operation
-
-
-
-
1.0
30
o
C/W
o
C/W
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
I
SD
I
SM
TEST CONDITIONS
Modified MOSFET
Symbol Showing the
Integral Reverse
P-N Junction Diode
G
D
MIN
-
-
TYP
-
-
MAX
14
56
UNITS
A
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
Forward Turn-On Time
NOTES:
V
SD
t
rr
Q
RR
t
ON
T
J
= 25
o
C, I
SD
= 14A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/µs
T
J
= 25
o
C, I
SD
= 14A, dI
SD
/dt = 100A/µs
Intrinsic Turn-On Time is Negligible, Turn-On
Speed is Substantially Controlled by L
S
+ L
D
-
150
1.6
-
-
300
3.4
-
1.8
640
7.2
-
V
ns
µC
-
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
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