Low-frequency Amplifier, high-speed switching, small motor drive
Features
•
•
•
•
•
Large current capacity
Low collector-to-emitter saturation voltage (resistance)) : RCE(sat) typ=330m
Ω
[IC=0.7A, IB=35mA]
Ultrasmall package facilitates miniaturization in end products
Small ON-resistance (Ron)
Halogen free compliance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
When mounted on ceramic substrate (600mm
×0.8mm)
2
Conditions
Ratings
40
30
5
700
1.4
600
150
-55 to +150
Unit
V
V
V
mA
A
mW
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
编译自semiengineering 业界越来越关注人工智能的功耗问题,但这个问题并没有简单的解决方案。这需要深入了解应用、半导体和系统层面的软件和硬件架构,以及所有这些的设计和实现方式。每个环节都会影响总功耗和提供的效用。这是最终必须做出的权衡。 但首先,必须解决效用问题。电力是否被浪费了?“我们将电力用于有价值的用途,”Ansys(现为新思科技旗下公司)产品营销总监 Marc Swi...[详细]