FIFO, 64X5, 45ns, Asynchronous, CMOS, CDIP20
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| Reach Compliance Code | unknown |
| 最长访问时间 | 45 ns |
| JESD-30 代码 | R-XDIP-T20 |
| JESD-609代码 | e0 |
| 内存集成电路类型 | OTHER FIFO |
| 内存宽度 | 5 |
| 端子数量 | 20 |
| 字数 | 64 words |
| 字数代码 | 64 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 64X5 |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP20,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 最大待机电流 | 0.0001 A |
| 最大压摆率 | 0.1 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| IDT72413L45DB | IDT72413L45SO | IDT72413L25PB | IDT72413L25SOB | IDT72413L35SO | IDT72413L35DB | IDT72413L25D | |
|---|---|---|---|---|---|---|---|
| 描述 | FIFO, 64X5, 45ns, Asynchronous, CMOS, CDIP20 | FIFO, 64X5, 19ns, Asynchronous, CMOS, PDSO20, 0.300 INCH, SOIC-20 | Bi-Directional FIFO, 64X5, Asynchronous, CMOS, PDIP20 | Bi-Directional FIFO, 64X5, Asynchronous, CMOS, PDSO20 | FIFO, 64X5, 20ns, Asynchronous, CMOS, PDSO20, 0.300 INCH, SOIC-20 | FIFO, 64X5, 20ns, Asynchronous, CMOS, CDIP20, 0.300 INCH, CERDIP-20 | FIFO, 64X5, 20ns, Asynchronous, CMOS, CDIP20, 0.300 INCH, CERDIP-20 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | unknown | _compli | unknown | not_compliant | not_compliant | not_compliant | not_compliant |
| JESD-30 代码 | R-XDIP-T20 | R-PDSO-G20 | R-PDIP-T20 | R-PDSO-G20 | R-PDSO-G20 | R-GDIP-T20 | R-GDIP-T20 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存集成电路类型 | OTHER FIFO | OTHER FIFO | BI-DIRECTIONAL FIFO | BI-DIRECTIONAL FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO |
| 内存宽度 | 5 | 5 | 5 | 5 | 5 | 5 | 5 |
| 端子数量 | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
| 字数 | 64 words | 64 words | 64 words | 64 words | 64 words | 64 words | 64 words |
| 字数代码 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 70 °C | 125 °C | 125 °C | 70 °C | 125 °C | 70 °C |
| 最低工作温度 | -55 °C | - | -55 °C | -55 °C | - | -55 °C | - |
| 组织 | 64X5 | 64X5 | 64X5 | 64X5 | 64X5 | 64X5 | 64X5 |
| 封装主体材料 | CERAMIC | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | SOP | DIP | SOP | SOP | DIP | DIP |
| 封装等效代码 | DIP20,.3 | SOP20,.4 | DIP20,.3 | SOP20,.4 | SOP20,.4 | DIP20,.3 | DIP20,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | IN-LINE |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.0001 A | 0.00009 A | 0.07 A | 0.07 A | 0.000075 A | 0.000085 A | 0.00006 A |
| 最大压摆率 | 0.1 mA | 0.09 mA | 0.07 mA | 0.07 mA | 0.075 mA | 0.085 mA | 0.06 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | YES | NO | YES | YES | NO | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | COMMERCIAL | MILITARY | MILITARY | COMMERCIAL | MILITARY | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | GULL WING | THROUGH-HOLE | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| 厂商名称 | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 最长访问时间 | 45 ns | 19 ns | - | - | 20 ns | 20 ns | 20 ns |
| 筛选级别 | 38535Q/M;38534H;883B | - | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | - | 38535Q/M;38534H;883B | - |
| 零件包装代码 | - | SOIC | - | - | SOIC | DIP | DIP |
| 包装说明 | - | 0.300 INCH, SOIC-20 | - | - | 0.300 INCH, SOIC-20 | 0.300 INCH, CERDIP-20 | 0.300 INCH, CERDIP-20 |
| 针数 | - | 20 | - | - | 20 | 20 | 20 |
| ECCN代码 | - | EAR99 | - | - | EAR99 | EAR99 | EAR99 |
| 其他特性 | - | FALL THRU 25NS | - | - | FALL THRU 28NS | FALL THRU 28NS | FALL THRU 40NS |
| 周期时间 | - | 22.22 ns | - | - | 28.57 ns | 28.57 ns | 40 ns |
| 长度 | - | 12.8 mm | - | - | 12.8 mm | 25.3365 mm | 25.3365 mm |
| 内存密度 | - | 320 bi | - | - | 320 bit | 320 bit | 320 bit |
| 功能数量 | - | 1 | - | - | 1 | 1 | 1 |
| 输出特性 | - | 3-STATE | - | - | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | - | YES | - | - | YES | YES | YES |
| 并行/串行 | - | PARALLEL | - | - | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | - | 225 | - | - | 225 | 225 | 225 |
| 座面最大高度 | - | 2.65 mm | - | - | 2.65 mm | 5.08 mm | 5.08 mm |
| 最大供电电压 (Vsup) | - | 5.5 V | - | - | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | - | 4.5 V | - | - | 4.5 V | 4.5 V | 4.5 V |
| 处于峰值回流温度下的最长时间 | - | 30 | - | - | 30 | 20 | 20 |
| 宽度 | - | 7.5 mm | - | - | 7.5 mm | 7.62 mm | 7.62 mm |
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