FIFO, 64X5, 20ns, Asynchronous, CMOS, PDSO20, 0.300 INCH, SOIC-20
参数名称 | 属性值 |
是否无铅 | 含铅 |
是否Rohs认证 | 不符合 |
厂商名称 | IDT (Integrated Device Technology) |
零件包装代码 | SOIC |
包装说明 | 0.300 INCH, SOIC-20 |
针数 | 20 |
Reach Compliance Code | not_compliant |
ECCN代码 | EAR99 |
最长访问时间 | 20 ns |
其他特性 | FALL THRU 28NS |
周期时间 | 28.57 ns |
JESD-30 代码 | R-PDSO-G20 |
JESD-609代码 | e0 |
长度 | 12.8 mm |
内存密度 | 320 bit |
内存集成电路类型 | OTHER FIFO |
内存宽度 | 5 |
湿度敏感等级 | 1 |
功能数量 | 1 |
端子数量 | 20 |
字数 | 64 words |
字数代码 | 64 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | |
组织 | 64X5 |
输出特性 | 3-STATE |
可输出 | YES |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | SOP |
封装等效代码 | SOP20,.4 |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
并行/串行 | PARALLEL |
峰值回流温度(摄氏度) | 225 |
电源 | 5 V |
认证状态 | Not Qualified |
座面最大高度 | 2.65 mm |
最大待机电流 | 0.000075 A |
最大压摆率 | 0.075 mA |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | COMMERCIAL |
端子面层 | Tin/Lead (Sn85Pb15) |
端子形式 | GULL WING |
端子节距 | 1.27 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | 30 |
宽度 | 7.5 mm |
IDT72413L35SO | IDT72413L45SO | IDT72413L25PB | IDT72413L25SOB | IDT72413L35DB | IDT72413L45DB | IDT72413L25D | |
---|---|---|---|---|---|---|---|
描述 | FIFO, 64X5, 20ns, Asynchronous, CMOS, PDSO20, 0.300 INCH, SOIC-20 | FIFO, 64X5, 19ns, Asynchronous, CMOS, PDSO20, 0.300 INCH, SOIC-20 | Bi-Directional FIFO, 64X5, Asynchronous, CMOS, PDIP20 | Bi-Directional FIFO, 64X5, Asynchronous, CMOS, PDSO20 | FIFO, 64X5, 20ns, Asynchronous, CMOS, CDIP20, 0.300 INCH, CERDIP-20 | FIFO, 64X5, 45ns, Asynchronous, CMOS, CDIP20 | FIFO, 64X5, 20ns, Asynchronous, CMOS, CDIP20, 0.300 INCH, CERDIP-20 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
Reach Compliance Code | not_compliant | _compli | unknown | not_compliant | not_compliant | unknown | not_compliant |
JESD-30 代码 | R-PDSO-G20 | R-PDSO-G20 | R-PDIP-T20 | R-PDSO-G20 | R-GDIP-T20 | R-XDIP-T20 | R-GDIP-T20 |
JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
内存集成电路类型 | OTHER FIFO | OTHER FIFO | BI-DIRECTIONAL FIFO | BI-DIRECTIONAL FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO |
内存宽度 | 5 | 5 | 5 | 5 | 5 | 5 | 5 |
端子数量 | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
字数 | 64 words | 64 words | 64 words | 64 words | 64 words | 64 words | 64 words |
字数代码 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 125 °C | 125 °C | 125 °C | 125 °C | 70 °C |
最低工作温度 | - | - | -55 °C | -55 °C | -55 °C | -55 °C | - |
组织 | 64X5 | 64X5 | 64X5 | 64X5 | 64X5 | 64X5 | 64X5 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC, GLASS-SEALED | CERAMIC | CERAMIC, GLASS-SEALED |
封装代码 | SOP | SOP | DIP | SOP | DIP | DIP | DIP |
封装等效代码 | SOP20,.4 | SOP20,.4 | DIP20,.3 | SOP20,.4 | DIP20,.3 | DIP20,.3 | DIP20,.3 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | IN-LINE | IN-LINE | IN-LINE |
电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
最大待机电流 | 0.000075 A | 0.00009 A | 0.07 A | 0.07 A | 0.000085 A | 0.0001 A | 0.00006 A |
最大压摆率 | 0.075 mA | 0.09 mA | 0.07 mA | 0.07 mA | 0.085 mA | 0.1 mA | 0.06 mA |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | NO | YES | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | COMMERCIAL | COMMERCIAL | MILITARY | MILITARY | MILITARY | MILITARY | COMMERCIAL |
端子面层 | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn85Pb15) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
端子形式 | GULL WING | GULL WING | THROUGH-HOLE | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
厂商名称 | IDT (Integrated Device Technology) | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
零件包装代码 | SOIC | SOIC | - | - | DIP | - | DIP |
包装说明 | 0.300 INCH, SOIC-20 | 0.300 INCH, SOIC-20 | - | - | 0.300 INCH, CERDIP-20 | - | 0.300 INCH, CERDIP-20 |
针数 | 20 | 20 | - | - | 20 | - | 20 |
ECCN代码 | EAR99 | EAR99 | - | - | EAR99 | - | EAR99 |
最长访问时间 | 20 ns | 19 ns | - | - | 20 ns | 45 ns | 20 ns |
其他特性 | FALL THRU 28NS | FALL THRU 25NS | - | - | FALL THRU 28NS | - | FALL THRU 40NS |
周期时间 | 28.57 ns | 22.22 ns | - | - | 28.57 ns | - | 40 ns |
长度 | 12.8 mm | 12.8 mm | - | - | 25.3365 mm | - | 25.3365 mm |
内存密度 | 320 bit | 320 bi | - | - | 320 bit | - | 320 bit |
功能数量 | 1 | 1 | - | - | 1 | - | 1 |
输出特性 | 3-STATE | 3-STATE | - | - | 3-STATE | - | 3-STATE |
可输出 | YES | YES | - | - | YES | - | YES |
并行/串行 | PARALLEL | PARALLEL | - | - | PARALLEL | - | PARALLEL |
峰值回流温度(摄氏度) | 225 | 225 | - | - | 225 | - | 225 |
座面最大高度 | 2.65 mm | 2.65 mm | - | - | 5.08 mm | - | 5.08 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | - | - | 5.5 V | - | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | - | - | 4.5 V | - | 4.5 V |
处于峰值回流温度下的最长时间 | 30 | 30 | - | - | 20 | - | 20 |
宽度 | 7.5 mm | 7.5 mm | - | - | 7.62 mm | - | 7.62 mm |
筛选级别 | - | - | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | - |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved