PD - 96198A
IRFS4115PbF
IRFSL4115PbF
Applications
l
High Efficiency Synchronous Rectification in SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
G
D
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
150V
10.3m
:
12.1m
:
99A
195A
Benefits
l
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l
Fully Characterized Capacitance and Avalanche
SOA
l
Enhanced body diode dV/dt and dI/dt Capability
l
Lead-Free
c
S
D
D
S
G
G
D
S
D
2
Pak
IRFS4115PbF
TO-262
IRFSL4115PbF
G
D
S
Gate
Drain
Max.
99
70
195
396
375
2.5
± 20
18
-55 to + 175
300
10lb in (1.1N m)
830
See Fig. 14, 15, 22a, 22b,
Source
Units
A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
d
W
W/°C
V
V/ns
f
°C
x
x
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Ãd
e
Thermal Resistance
Symbol
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
g
mJ
A
mJ
kl
jk
Parameter
Typ.
–––
–––
Max.
0.4
40
Units
°C/W
www.irf.com
1
03/09/11
IRFS/SL4115PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
150
–––
–––
3.0
–––
–––
–––
–––
–––
–––
0.18
10.3
–––
–––
–––
–––
–––
2.3
–––
–––
12.1
5.0
20
250
100
-100
–––
V
V/°C
mΩ
V
μA
nA
Ω
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 3.5mA
V
GS
= 10V, I
D
= 62A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 150V, V
GS
= 0V
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
g
d
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Min. Typ. Max. Units
–––
77
28
26
51
18
73
41
39
5270
490
105
460
530
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
Conditions
V
DS
= 50V, I
D
= 62A
I
D
= 62A
V
DS
= 75V
V
GS
= 10V
I
D
= 62A, V
DS
=0V, V
GS
= 10V
V
DD
= 98V
I
D
= 62A
R
G
= 2.2Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
97
–––
–––
–––
–––
Turn-On Delay Time
–––
Rise Time
–––
Turn-Off Delay Time
–––
Fall Time
–––
Input Capacitance
–––
Output Capacitance
–––
Reverse Transfer Capacitance
–––
Effective Output Capacitance (Energy Related) –––
Effective Output Capacitance (Time Related)
–––
g
g
ns
pF
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 120V
V
GS
= 0V, V
DS
= 0V to 120V
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
i
, See Fig. 11
h
D
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
99
396
A
A
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 62A, V
GS
= 0V
V
R
= 130V,
T
J
= 25°C
I
F
= 62A
T
J
= 125°C
T
J
= 25°C
di/dt = 100A/μs
T
J
= 125°C
T
J
= 25°C
Ãd
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
86
–––
ns
––– 110 –––
––– 300 –––
nC
––– 450 –––
–––
6.5
–––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
S
g
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Recommended max EAS limit, starting T
J
= 25°C,
L = 0.17mH, R
G
= 25Ω, I
AS
= 100A, V
GS
=15V.
I
SD
≤
62A, di/dt
≤
1040A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
R
θJC
value shown is at time zero.
2
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IRFS/SL4115PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
5.0V
10
1
5.0V
0.1
0.1
1
≤
60μs PULSE WIDTH
Tj = 25°C
1
100
0.1
1
10
≤
60μs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
T J = 175°C
2.5
ID = 62A
VGS = 10V
2.0
10
T J = 25°C
1.5
1
VDS = 50V
≤60μs
PULSE WIDTH
2
4
6
8
10
12
14
16
1.0
0.1
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
ID= 62A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
10000
C, Capacitance (pF)
VDS= 120V
VDS= 75V
VDS= 30V
Ciss
1000
Coss
Crss
100
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFS/SL4115PbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100μsec
100
DC
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
1000
1msec
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VSD, Source-to-Drain Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
120
100
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
200
Id = 3.5mA
190
180
170
160
150
140
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
6.0
5.0
4.0
VGS(th) , Gate threshold Voltage (V)
Fig 10.
Drain-to-Source Breakdown Voltage
6.0
5.0
Energy (μJ)
4.0
ID = 250μA
3.0
ID = 1.0mA
ID = 1.0A
2.0
3.0
2.0
1.0
0.0
-20
0
20
40
60
80 100 120 140 160
1.0
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
VDS, Drain-to-Source Voltage (V)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Threshold Voltage vs. Temperature
4
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IRFS/SL4115PbF
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
τ
C
τ
C
Ri (°C/W)
τi
(sec)
0.245
0.0059149
0.155
0.0006322
τ
1
τ
2
0.001
SINGLE PULSE
( THERMAL RESPONSE )
C i=
τi/R
i
Ci =
τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig. 13
Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
IF = 42A
V R = 130V
TJ = 25°C
TJ = 125°C
IRR (A)
50
IF = 62A
V R = 130V
TJ = 25°C
TJ = 125°C
40
40
IRR (A)
30
30
20
20
10
10
0
0
200
400
600
800
1000
diF /dt (A/μs)
0
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 14
- Typical Recovery Current vs. di
f
/dt
2500
IF = 42A
V R = 130V
TJ = 25°C
TJ = 125°C
QRR (A)
Fig. 15
- Typical Recovery Current vs. di
f
/dt
3000
IF = 62A
V R = 130V
TJ = 25°C
TJ = 125°C
2000
2400
QRR (A)
1500
1800
1000
1200
500
600
0
0
200
400
600
800
1000
diF /dt (A/μs)
0
0
200
400
600
800
1000
diF /dt (A/μs)
Fig. 16
- Typical Stored Charge vs. di
f
/dt
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Fig. 17
- Typical Stored Charge vs. di
f
/dt
5
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