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IDT71V2548S150BG

产品描述ZBT SRAM, 256KX18, 3.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119
产品类别存储    存储   
文件大小513KB,共28页
制造商IDT (Integrated Device Technology)
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IDT71V2548S150BG概述

ZBT SRAM, 256KX18, 3.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119

IDT71V2548S150BG规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码BGA
包装说明14 X 22 MM, PLASTIC, MS-028AA, BGA-119
针数119
Reach Compliance Codenot_compliant
ECCN代码3A991.B.2.A
最长访问时间3.8 ns
其他特性PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)150 MHz
I/O 类型COMMON
JESD-30 代码R-PBGA-B119
JESD-609代码e0
长度22 mm
内存密度4718592 bit
内存集成电路类型ZBT SRAM
内存宽度18
湿度敏感等级3
功能数量1
端子数量119
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX18
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码BGA
封装等效代码BGA119,7X17,50
封装形状RECTANGULAR
封装形式GRID ARRAY
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
电源2.5,3.3 V
认证状态Not Qualified
座面最大高度2.36 mm
最大待机电流0.04 A
最小待机电流3.14 V
最大压摆率0.325 mA
最大供电电压 (Vsup)3.465 V
最小供电电压 (Vsup)3.135 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn63Pb37)
端子形式BALL
端子节距1.27 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度14 mm

IDT71V2548S150BG相似产品对比

IDT71V2548S150BG IDT71V2546S100PF IDT71V2548S133PF IDT71V2548S100BG IDT71V2546S150PF IDT71V2546S133PF IDT71V2548S100PF IDT71V2548S133BG IDT71V2548S150PF
描述 ZBT SRAM, 256KX18, 3.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119 ZBT SRAM, 128KX36, 5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 ZBT SRAM, 256KX18, 4.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 ZBT SRAM, 256KX18, 5ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119 ZBT SRAM, 128KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 ZBT SRAM, 128KX36, 4.2ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 ZBT SRAM, 256KX18, 5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 ZBT SRAM, 256KX18, 4.2ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028AA, BGA-119 ZBT SRAM, 256KX18, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 BGA QFP QFP BGA QFP QFP QFP BGA QFP
包装说明 14 X 22 MM, PLASTIC, MS-028AA, BGA-119 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 14 X 22 MM, PLASTIC, MS-028AA, BGA-119 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100 14 X 22 MM, PLASTIC, MS-028AA, BGA-119 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQFP-100
针数 119 100 100 119 100 100 100 119 100
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN代码 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
最长访问时间 3.8 ns 5 ns 4.2 ns 5 ns 3.8 ns 4.2 ns 5 ns 4.2 ns 3.8 ns
其他特性 PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
最大时钟频率 (fCLK) 150 MHz 100 MHz 133 MHz 100 MHz 150 MHz 133 MHz 100 MHz 133 MHz 150 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PBGA-B119 R-PQFP-G100 R-PQFP-G100 R-PBGA-B119 R-PQFP-G100 R-PQFP-G100 R-PQFP-G100 R-PBGA-B119 R-PQFP-G100
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0 e0
长度 22 mm 20 mm 20 mm 22 mm 20 mm 20 mm 20 mm 22 mm 20 mm
内存密度 4718592 bit 4718592 bit 4718592 bit 4718592 bit 4718592 bit 4718592 bit 4718592 bit 4718592 bit 4718592 bit
内存集成电路类型 ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
内存宽度 18 36 18 18 36 36 18 18 18
湿度敏感等级 3 3 3 3 3 3 3 3 3
功能数量 1 1 1 1 1 1 1 1 1
端子数量 119 100 100 119 100 100 100 119 100
字数 262144 words 131072 words 262144 words 262144 words 131072 words 131072 words 262144 words 262144 words 262144 words
字数代码 256000 128000 256000 256000 128000 128000 256000 256000 256000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 256KX18 128KX36 256KX18 256KX18 128KX36 128KX36 256KX18 256KX18 256KX18
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 BGA LQFP LQFP BGA LQFP LQFP LQFP BGA LQFP
封装等效代码 BGA119,7X17,50 QFP100,.63X.87 QFP100,.63X.87 BGA119,7X17,50 QFP100,.63X.87 QFP100,.63X.87 QFP100,.63X.87 BGA119,7X17,50 QFP100,.63X.87
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE GRID ARRAY FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE GRID ARRAY FLATPACK, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) NOT SPECIFIED 240 240 NOT SPECIFIED 240 240 240 NOT SPECIFIED 240
电源 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V 2.5,3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 2.36 mm 1.6 mm 1.6 mm 2.36 mm 1.6 mm 1.6 mm 1.6 mm 2.36 mm 1.6 mm
最大待机电流 0.04 A 0.04 A 0.04 A 0.04 A 0.04 A 0.04 A 0.04 A 0.04 A 0.04 A
最小待机电流 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V
最大压摆率 0.325 mA 0.25 mA 0.3 mA 0.25 mA 0.325 mA 0.3 mA 0.25 mA 0.3 mA 0.325 mA
最大供电电压 (Vsup) 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V 3.465 V
最小供电电压 (Vsup) 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V 3.135 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn63Pb37) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn63Pb37) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn85Pb15) Tin/Lead (Sn63Pb37) Tin/Lead (Sn85Pb15)
端子形式 BALL GULL WING GULL WING BALL GULL WING GULL WING GULL WING BALL GULL WING
端子节距 1.27 mm 0.65 mm 0.65 mm 1.27 mm 0.65 mm 0.65 mm 0.65 mm 1.27 mm 0.65 mm
端子位置 BOTTOM QUAD QUAD BOTTOM QUAD QUAD QUAD BOTTOM QUAD
处于峰值回流温度下的最长时间 NOT SPECIFIED 20 20 NOT SPECIFIED 20 20 20 NOT SPECIFIED 20
宽度 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm 14 mm

 
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