NSS60101DMT
60 V, 1 A, Low V
CE(sat)
NPN
Transistors
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and LED lightning,
power management…etc. In the automotive industry they can be used
in air bag deployment and in the instrument cluster. The high current
gain allows e
2
PowerEdge devices to be driven directly from PMU’s
control outputs, and the Linear Gain (Beta) makes them ideal
components in analog amplifiers.
Features
www.onsemi.com
60 Volt, 1 Amp
NPN Low V
CE(sat)
Transistors
MARKING
DIAGRAM
WDFN6
CASE 506AN
1
1
2 AN MG
G
3
6
5
4
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
NSV60101DMTWTBG − Wettable Flanks Device
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Max
60
60
6
1
2
Unit
Vdc
Vdc
Vdc
A
A
AN = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
6
5
4
8
1
2
3
7
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
6,7
1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance Junction−to−Ambient
(Notes 1 and 2)
Total Power Dissipation per Package @
T
A
= 25°C (Note 2)
Thermal Resistance Junction−to−Ambient
(Note 3)
Power Dissipation per Transistor @ T
A
= 25°C
(Note 3)
Junction and Storage Temperature Range
Symbol
R
qJA
P
D
R
qJA
P
D
T
J
, T
stg
Max
55
2.27
69
1.8
−55 to
+150
Unit
°C/W
5
2
4
W
°C/W
W
°C
3,8
ORDERING INFORMATION
Device
NSS60101DMTTBG
NSV60101DMTWTBG
Package
WDFN6
(Pb−Free)
WDFN6
(Pb−Free)
Shipping
†
3000/Tape &
Reel
3000/Tape &
Reel
1. Per JESD51−7 with 100 mm
2
pad area and 2 oz. Cu (Dual Operation).
2. P
D
per Transistor when both are turned on is one half of Total P
D
or 1.13 Watts.
3. Per JESD51−7 with 100 mm
2
pad area and 2 oz. Cu (Single−Operation).
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
July, 2016 − Rev. 2
Publication Order Number:
NSS60101DMT/D
NSS60101DMT
Table 1. ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I
C
= 10 mA, I
B
= 0)
Collector−Base Breakdown Voltage (Ic = 0.1 mA, I
E
= 0)
Emitter−Base Breakdown Voltage (I
E
= 0.1 mA, I
C
= 0)
Collector Cutoff Current (V
CB
= 60 V, I
E
= 0)
Emitter Cutoff Current (V
BE
= 5.0 V)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= 100 mA, V
CE
= 2.0 V)
(I
C
= 500 mA, V
CE
= 2.0 V)
(I
C
= 1 A, V
CE
= 2.0 V)
(I
C
= 2 A, V
CE
= 2.0 V
Collector−Emitter Saturation Voltage (Note 4)
(I
C
= 500 mA, I
B
= 50 mA)
(I
C
= 1 A, I
B
= 50 mA)
(I
C
= 1 A, I
B
= 100 mA)
Base*Emitter Saturation Voltage (Note 4)
(I
C
= 500 mA, I
B
= 50 mA)
(I
C
= 1 A, I
B
= 50 mA)
(I
C
= 1 A, I
B
= 100 mA)
Base−Emitter Turn−on Voltage (Note 4)
(I
C
= 500 mA, V
CE
= 2 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
Cutoff Frequency
(I
C
= 50 mA, V
CE
= 2.0 V, f = 100 MHz)
SWITCHING TIMES
Delay Time (V
CC
= 10 V, I
C
= 0.5 A, I
B1
= 25 mA, I
B2
= −25 mA)
Rise Time (V
CC
= 10 V, I
C
= 0.5 A, I
B1
= 25 mA, I
B2
= −25 mA)
Storage Time (V
CC
= 10 V, I
C
= 0.5 A, I
B1
= 25 mA, I
B2
= −25 mA)
Fall Time (V
CC
= 10 V, I
C
= 0.5 A, I
B1
= 25 mA, I
B2
= −25 mA)
t
d
t
r
t
s
t
f
13
18
700
80
ns
ns
ns
ns
C
obo
f
T
10
180
pF
MHz
h
FE
150
120
90
35
V
CE(sat)
0.063
0.130
0.115
V
BE(sat)
1.0
1.0
1.1
V
BE(on)
0.9
V
0.100
0.200
0.180
V
250
240
180
55
V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
60
80
6
100
100
V
V
V
nA
nA
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Condition: Pulse Width = 300
msec,
Duty Cycle
≤
2%
www.onsemi.com
2
NSS60101DMT
TYPICAL CHARACTERISTICS
450
400
h
FE
, DC CURRENT GAIN
350
300
250
200
150
100
50
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
−55°C
25°C
150°C
100°C
V
CE
= 2 V
h
FE
, DC CURRENT GAIN
450
400
350
300
25°C
250
200
150
100
50
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
−55°C
150°C
100°C
V
CE
= 5 V
Figure 1. DC Current Gain
2.2
I
C
, COLLECTOR CURRENT (A)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
2.0 mA
4.0 mA
16 mA
14 mA
12 mA
10 mA
8.0 mA
6.0 mA
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION (V)
Figure 2. DC Current Gain
18 mA
I
B
= 20 mA
150°C
100°C
0.1
−55°C
25°C
I
C
/I
B
= 50
0.001
0.01
0.1
1
10
0.01
I
C
, COLLECTOR CURRENT (A)
Figure 3. Collector Current as a Function of
Collector Emitter Voltage
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION (V)
150°C
1.0
Figure 4. Collector−Emitter Saturation Voltage
V
BE(sat)
, BASE−EMITTER
SATURATION (V)
−55°C
25°C
0.5 100°C
−55°C
0.1
25°C
100°C
I
C
/I
B
= 100
0
0.001
0.01
0.1
1
150°C
I
C
/I
B
= 20
0.001
0.01
0.1
1
10
0.01
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Base−Emitter Saturation Voltage
www.onsemi.com
3
NSS60101DMT
TYPICAL CHARACTERISTICS
1.2
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION (V)
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
−55°C
25°C
100°C
150°C
V
CE
= 2 V
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I
C
= 0.5 A
0.1 I = 0.1 A
C
0
0.0001
0.001
0.01
I
B
, BASE CURRENT (A)
I
C
= 1.0 A
I
C
= 2.0 A
T
A
= 25°C
0.1
1
Figure 7. Base−Emitter “ON” Voltage
240
C
obo
, OUTPUT CAPACITANCE (pF)
C
ibo
, INPUT CAPACITANCE (pF)
T
A
= 25°C
f = 1 MHz
40
35
30
25
20
15
10
5
0
0
1
2
3
4
5
6
7
0
Figure 8. Collector Saturation Region
200
T
A
= 25°C
f = 1 MHz
160
120
80
40
V
EB
, BASE−EMITTER VOLTAGE (A)
5
10
15
20
25
30
V
CB
, COLLECTOR−BASE REVERSE VOLTAGE (V)
Figure 9. Input Capacitance
f
T
, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
1000
P
D
, POWER DISSIPATION (W)
T
J
= 25°C
V
CE
= 2 V
f
test
= 100 MHz
2.5
Figure 10. Output Capacitance
2.0
1.5
100
1.0
0.5
0
10
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
0
25
50
75
100
125
150
TEMPERATURE (°C)
Figure 11. f
T
, Current Gain Bandwidth Product
Figure 12. Power Derating
www.onsemi.com
4
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
