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NSS1C301ET4G_14

产品描述3 A, 100 V, NPN, Si, POWER TRANSISTOR
产品类别半导体    分立半导体   
文件大小67KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NSS1C301ET4G_14概述

3 A, 100 V, NPN, Si, POWER TRANSISTOR

3 A, 100 V, NPN, 硅, 功率晶体管

NSS1C301ET4G_14规格参数

参数名称属性值
最大集电极电流3 A
最大集电极发射极电压100 V
端子数量2
加工封装描述ROHS COMPLIANT, PLASTIC, CASE 396C, DPAK-3
each_compliYes
欧盟RoHS规范Yes
状态Active
壳体连接COLLECTOR
结构SINGLE
最小直流放大倍数80
jesd_30_codeR-PSSO-G2
jesd_609_codee3
moisture_sensitivity_levelNOT SPECIFIED
元件数量1
最大工作温度150 Cel
包装材料PLASTIC/EPOXY
包装形状RECTANGULAR
包装尺寸SMALL OUTLINE
eak_reflow_temperature__cel_NOT SPECIFIED
larity_channel_typeNPN
wer_dissipation_max__abs_33 W
sub_categoryOther Transistors
表面贴装YES
端子涂层MATTE TIN
端子形式GULL WING
端子位置SINGLE
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
额定交叉频率120 MHz

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NSS1C301ET4G
100 V, 3.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V
CE(sat)
) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
www.onsemi.com
100 VOLTS, 3.0 AMPS
12.5 WATTS
NPN LOW V
CE(sat)
TRANSISTOR
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
1 2
Complement to NSS1C300ET4G
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CBO
V
CEO
V
EB
I
C
I
CM
I
B
P
D
33
0.26
P
D
2.1
0.017
T
J
, T
stg
−65 to +150
W
W/°C
°C
W
W/°C
Y
WW
1C31E
G
Max
140
100
6.0
3.0
6.0
0.5
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
YWW
1C31EG
= Year
= Work Week
= Device Code
= Pb−Free
ORDERING INFORMATION
Device
NSS1C301ET4G
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
2500/
Tape & Reel
2500/
Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
NSV1C301ET4G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
March, 2016 − Rev. 5
Publication Order Number:
NSS1C301E/D

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