PD -
97407
IRLB3813PbF
Applications
l
l
HEXFET
®
Power MOSFET
l
Optimized for UPS/Inverter Applications
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Power Tools
V
DSS
R
DS(on)
max
Qg (typ.)
30V 1.95m
Ω
@V
GS
= 10V 57nC
D
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
l
Lead-Free
G
D
S
TO-220AB
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
260
Units
V
g
Maximum Power Dissipation
g
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
c
h
190
h
1050
230
120
1.6
± 20
A
W
W/°C
°C
-55 to + 175
300 (1.6mm from case)
10lb in (1.1N m)
x
x
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
g
Parameter
Typ.
–––
0.50
–––
Max.
0.64
–––
62
Units
°C/W
f
Notes
through
are on page 9
www.irf.com
1
07/03/09
IRLB3813PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
140
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
1.60
2.00
1.90
-7.8
–––
–––
–––
–––
–––
57
16
6.7
19
15
25.7
35
0.87
36
170
33
60
8420
1620
650
–––
V
Conditions
V
GS
= 0V, I
D
= 250µA
––– mV/°C Reference to 25°C, I
D
= 1.0mA
mΩ V
GS
= 10V, I
D
= 60A
1.95
2.60
2.35
–––
1.0
100
100
-100
–––
86
–––
–––
–––
–––
–––
–––
1.3
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
pF
nC
Ω
ns
nC
V
V
GS
= 4.5V, I
D
V
DS
= V
GS
, I
D
= 150µA
e
= 48A
e
mV/°C
µA V
DS
= 24V, V
GS
= 0V
nA
S
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 48A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 48A
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 48A
R
G
= 1.8Ω
See Fig. 14
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
Max.
520
48
Units
mJ
A
e
Avalanche Characteristics
E
AS
I
AR
Ã
d
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
24
22
260
h
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 48A, V
GS
= 0V
T
J
= 25°C, I
F
= 48A, V
DD
= 15V
di/dt = 244A/µs
A
1050
1.0
36
33
V
ns
nC
Ã
e
e
2
www.irf.com
IRLB3813PbF
10000
TOP
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
1000
TOP
VGS
10V
9.0V
7.0V
5.5V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
1000
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
3.0V
100
≤
60µs PULSE WIDTH
Tj = 25°C
3.0V
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
ID = 120A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
1.5
10
T J = 25°C
1.0
1
VDS = 15V
≤60µs
PULSE WIDTH
1
2
3
4
5
6
7
0.1
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRLB3813PbF
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
14.0
ID= 48A
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
VDS= 24V
VDS= 15V
10000
Ciss
Coss
1000
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
25
50
75
100
125
150
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000
T J = 175°C
100
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
100µsec
1msec
100
10msec
10
TJ = 25°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-to-Drain Voltage (V)
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRLB3813PbF
300
250
ID, Drain Current (A)
3.0
Limited By Package
VGS(th) , Gate threshold Voltage (V)
2.5
2.0
1.5
1.0
0.5
0.0
200
150
100
50
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
ID = 150µA
ID = 1.0mA
ID = 1.0A
-75 -50 -25 0
25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
1
Thermal Response ( Z thJC ) °C/W
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
1
τ
2
τ
3
τ
4
τ
4
Ri (°C/W)
0.4985
0.0022
0.0001
0.1392
0.01
0.004600
8.246580
6.149340
0.000300
τi
(sec)
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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