BYV25G-600
Ultrafast rectifier diode
Rev. 01 — 4 February 2010
Product data sheet
1. Product profile
1.1 General description
Ultrafast epitaxial rectifier diode in a SOT226 (I2PAK) plastic package.
1.2 Features and benefits
Fast switching
High thermal cycling performance
Low forward voltage drop
Low profile package facilitates
compact/slim designs
Low switching losses
Low thermal resistance
Soft recovery minimizes
power-consuming oscillations
1.3 Applications
Discontinuous Current Mode (DCM)
Power Factor Correction (PFC)
High frequency switched-mode power
supplies
1.4 Quick reference data
Table 1.
V
RRM
I
F(AV)
Quick reference
Conditions
Min
-
square-wave pulse;
δ
= 0.5;
T
mb
≤
135 °C; see
Figure 1
and
2
I
F
= 1 A; V
R
≥
30 V;
dI
F
/dt = 100 A/µs; T
j
= 25 °C;
see
Figure 5
-
Typ
-
-
Max
600
5
Unit
V
A
repetitive peak reverse
voltage
average forward current
Symbol Parameter
Dynamic characteristics
t
rr
reverse recovery time
-
50
60
ns
NXP Semiconductors
BYV25G-600
Ultrafast rectifier diode
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
n.c.
K
A
K
Description
not connected
cathode
anode
mounting base; cathode
1
2
3
003aad550
Simplified outline
Graphic symbol
1
2
3
SOT226A (I2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BYV25G-600
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
Version
SOT226A
Type number
4. Limiting values
Table 4.
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
Limiting values
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward
current
repetitive peak forward
current
non-repetitive peak
forward current
storage temperature
junction temperature
T
mb
≤
100 °C; DC
square-wave pulse;
δ
= 0.5; T
mb
≤
135 °C; see
Figure 1
and
2
square-wave pulse;
δ
= 0.5; T
mb
≤
135 °C
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
= 25 °C
t
p
= 10 ms; sine-wave pulse; T
j(init)
= 25 °C
Conditions
Min
-
-
-
-
-
-
-
-40
-
Max
600
600
600
5
10
66
60
150
150
Unit
V
V
V
A
A
A
A
°C
°C
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
2 of 11
NXP Semiconductors
BYV25G-600
Ultrafast rectifier diode
10
P
tot
(W)
003aac347
8
P
tot
(W)
003aac348
δ
=1
8
6
6
0.2
4
0.1
0.5
a = 1.57
1.9
2.2
2.8
4.0
4
2
2
0
0
2
4
6
I
F(AV)
(A)
0
8
0
2
4
I
F(AV)
(A)
6
Fig 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
3 of 11
NXP Semiconductors
BYV25G-600
Ultrafast rectifier diode
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient free air
Conditions
with heatsink compound;
see
Figure 3
Min
-
-
Typ
-
60
Max
2.5
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
001aag913
10
−1
P
δ
=
t
p
T
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 3.
Transient thermal impedance from junction to mounting base as a function of pulse width
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
4 of 11
NXP Semiconductors
BYV25G-600
Ultrafast rectifier diode
6. Characteristics
Table 6.
Symbol
V
F
I
R
Characteristics
Parameter
forward voltage
reverse current
Conditions
I
F
= 5 A; see
Figure 4
I
F
= 5 A; T
mb
≤
150 °C; see
Figure 4
V
R
= 600 V; T
j
= 100 °C
V
R
= 600 V
Dynamic characteristics
Q
r
t
rr
V
FR
I
RM
recovered charge
reverse recovery time
forward recovery
voltage
peak reverse recovery
current
I
F
= 2 A; V
R
≥
30 V; dI
F
/dt = 20 A/µs;
see
Figure 5
I
F
= 1 A; V
R
≥
30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; see
Figure 5
I
F
= 10 A; dI
F
/dt = 10 A/µs; see
Figure 6
I
F
= 10 A; V
R
≤
30 V; dI
F
/dt = 50 A/µs;
T
j
= 100 °C; see
Figure 5
-
-
-
-
40
50
3.2
3
70
60
-
5.5
nC
ns
V
A
Min
-
-
-
-
Typ
1.12
0.97
0.1
2
Max
1.3
1.11
0.35
50
Unit
V
V
mA
µA
Static characteristics
15
I
F
(A)
003aac232
I
F
dl
F
dt
t
rr
10
time
25 %
(1)
(2)
(3)
5
Q
r
100 %
I
R
I
RM
003aac562
0
0
0.4
0.8
1.2
V
F
(V)
1.6
Fig 4.
Forward current as a function of forward
voltage
Fig 5.
Reverse recovery definitions; ramp recovery
BYV25G-600_1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 4 February 2010
5 of 11
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