RU40190S
N-Channel Advanced Power MOSFET
MOSFET
Features
• 40V/190A,
R
DS (ON)
=2.5mΩ(Typ.)@V
GS
=10V
•
Super High Dense Cell Design
• Ultra Low On-Resistance
•
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-263
Applications
• DC-DC Converters and Off-line UPS
• Switching Applications
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
40
±20
175
-55 to 175
T
C
=25°C
190
①
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
I
D
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=10V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
760
②
①
A
A
W
W
°C/W
190
P
D
R
θJC
③
146
300
150
0.5
①
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
812
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2012
www.ruichips.com
RU40190S
Electrical Characteristics
Symbol
Parameter
(T
C
=25°C Unless Otherwise Noted)
RU40190S
Min.
Typ.
Max.
Test Condition
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
④
V
GS
=0V, I
DS
=250µA
V
DS
= 40V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=75A
40
1
30
2
3
4
±100
2.5
3.5
V
µA
V
nA
mΩ
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Characteristics
V
SD
t
rr
Q
rr
④
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑤
I
SD
=75A, V
GS
=0V
I
SD
=75A, dl
SD
/dt=100A/µs
40
52
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=20V,
Frequency=1.0MHz
1.2
4800
950
480
19
V
DD
=20V, R
L
=0.3Ω,
I
DS
=75A, V
GEN
=10V,
R
G
=2.5Ω
96
70
50
1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑤
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=32V, V
GS
=10V,
I
DS
=75A
120
34
46
nC
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
Pulse width limited by safe operating area.
Limited by T
Jmax
, I
AS
=57A, V
DD
= 32V, R
G
= 50Ω , Starting T
J
= 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2012
2
www.ruichips.com
RU40190S
Typical Characteristics
Power Dissipation
Drain Current
T
j
- Junction Temperature (°C)
I
D
- Drain Current (A)
T
j
- Junction Temperature (°C)
Safe Operation Area
P
tot
- Power (W)
Thermal Transient Impedance
V
DS
- Drain-Source Voltage (V)
Normalized Effective Transient
Square Wave Pulse Duration (sec)
3
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2012
I
D
- Drain Current (A)
www.ruichips.com
RU40190S
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
V
DS
- Drain-Source Voltage (V)
R
DS(ON)
- On Resistance (mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
V
GS
- Gate-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2012
4
Normalized Threshold Voltage
T
j
- Junction Temperature (°C)
R
DS(ON)
- On - Resistance (m)
www.ruichips.com
RU40190S
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Normalized On Resistance
T
j
- Junction Temperature (°C)
Capacitance
I
S
- Source Current (A)
V
SD
- Source-Drain Voltage (V)
Gate Charge
V
DS
- Drain-Source Voltage (V)
V
GS
- Gate-Source Voltage (V)
C - Capacitance (pF)
Q
G
- Gate Charge (nC)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2012
5
www.ruichips.com
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