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NCP4413DR2

产品描述3A BUF OR INV BASED MOSFET DRIVER, PDSO8, SO-8
产品类别模拟混合信号IC    驱动程序和接口   
文件大小122KB,共8页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 选型对比 全文预览

NCP4413DR2概述

3A BUF OR INV BASED MOSFET DRIVER, PDSO8, SO-8

NCP4413DR2规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称ON Semiconductor(安森美)
零件包装代码SOIC
包装说明SOP, SOP8,.25
针数8
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time1 week
高边驱动器YES
接口集成电路类型BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码R-PDSO-G8
JESD-609代码e0
长度4.9 mm
功能数量1
端子数量8
最高工作温度85 °C
最低工作温度-40 °C
标称输出峰值电流3 A
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)240
电源4.5/16 V
认证状态Not Qualified
座面最大高度1.75 mm
最大供电电压16 V
最小供电电压4.5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn80Pb20)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间30
断开时间0.05 µs
接通时间0.05 µs
宽度3.9 mm

NCP4413DR2文档预览

NCP4413, NCP4414
3 A High-Speed MOSFET
Drivers
The NCP4413/4414 are 3 A CMOS buffer/drivers. They will not
latch up under any conditions within their power and voltage ratings.
They are not subject to damage when up to 5 V of noise spiking of
either polarity that occurs on the ground pin. They can accept,
without damage or logic upset, up to 500 mA of current of either
polarity being forced back into their output. All terminals are fully
protected against up to 4 kV of electrostatic discharge.
As MOSFET drivers, the NCP4413/4414 can easily switch
1800 pF gate capacitance in 20 nsec with matched rise and fall times,
and provide low enough impedance in both the ON and the OFF
states to ensure the MOSFET’s intended state will not be affected,
even by large transients. The rise and fall time edges are matched to
allow driving short–duration inputs with greater output accuracy.
Features
http://onsemi.com
MARKING
DIAGRAM
8
8
1
SO–8
D SUFFIX
CASE 751
1
NCP
441x
YWWXZ
8
PDIP–8
P SUFFIX
CASE 626
1
x
= Device Number (3 or 4)
YY, Y = Year
WW, W = Work Week
X
= Assembly ID Code
Z
= Subcontractor ID Code
CO
= Country of Origin
NCP441x
YYWWXZ
CO
Latch–up Protected: Will Withstand 500 mA Reverse Current
Input Will Withstand Negative Inputs Up to 5 V
ESD Protected (4 kV)
High Peak Output Current (3 A)
Wide Operating Range (4.5 V to 16 V)
High Capacitive Load Drive Capability (1800 pF in 20 nsec)
Short Delay Time (35 nsec Typ)
Consistent Delay Times with Changes in Supply Voltage
Matched Delay Times
Low Supply Current
With Logic “1” Input (500
m
A)
With Logic “0” Input (100
m
A)
Low Output Impedance (2.7
W
)
Functional Block Diagram
NCP4413
INVERTING
OUTPUTS
VDD
8
1
ORDERING INFORMATION
Device
NCP4413DR2
Inverting
NCP4413P
Inverting
NCP4414DR2
Non–Inverting
NCP4414P
Non–Inverting
Package
SO–8
PDIP–8
SO–8
PDIP–8
Shipping
2500 Tape & Reel
50 Units/Rail
2500 Tape & Reel
50 Units/Rail
300 mV
OUTPUT
NONINVERTING
OUTPUTS
INPUT
4.7 V
GND
EFFECTIVE
INPUT
C = 10 pF
NCP4414
©
Semiconductor Components Industries, LLC, 2000
1
June, 2000 – Rev. 0
Publication Order Number:
NCP4413/D
NCP4413, NCP4414
PIN CONNECTIONS
8–Pin SOIC/PDIP–8
VDD
IN
NC
GND
1
2
3
4
8
7
8–Pin SOIC/PDIP–8
VDD
2
6, 7
IN
NC
INVERTING
GND
1
2
3
4
8
7
VDD
OUT
OUT
GND
VDD
OUT
OUT
GND
NONINVERTING
2
6, 7
NCP4413
6
5
NCP4414
6
5
(Top View)
NC = NO INTERNAL CONNECTION
(Top View)
http://onsemi.com
2
NCP4413, NCP4414
ABSOLUTE MAXIMUM RATINGS*
Rating
Supply Voltage
Input Voltage, IN A or IN B
Maximum Chip Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10 sec)
Package Thermal Resistance
SOIC
SOIC
Operating Temperature Range
Power Dissipation (TA
SOIC
Tstg
TSOI
R
θJA
R
θJC
TA
PD
Symbol
VDD
VIN
Value
+20
VDD + 0.3 to GND – 5.0
+150
–65 to +150
+300
155
45
–40 to +85
470
°C
mW
Unit
V
V
°C
°C
°C
°C/W
v
70°C)
*Static–sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses
above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those indicated in the operation section of the specifications is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Over operating temperature range with 4.5 V
Characteristic
Input
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch–Up Protection
Withstand Reverse Current
Switching Time (Note 1.)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
IS
VIN = 3 V
VIN = 0 V
VDD = 16 V
tR
tF
tD1
tD2
Figure 1
Figure 1
Figure 1
Figure 1
TA = 25°C
– 40°C
TA
TA = 25°C
– 40°C
TA
TA = 25°C
– 40°C
TA
TA = 25°C
– 40°C
TA
VOH
VOL
RO
IPK
IREV
DC Test
DC Test
VDD = 16 V, IO = 10 mA TA = 25°C
– 40°C
TA
VDD = 16 V
Duty Cycle
2%
t
300
m
sec
VIH
VIL
IIN
0V
Symbol
Test Conditions
Typical values are measured at TA = 25°C; VDD = 16 V.)
v
VDD
v
16 V, unless otherwise specified.
Min
Typ
Max
Unit
2.0
TA = 25°C
– 40°C
TA
0.8
1.0
10
V
V
v
VIN
v
VDD
v v
85°C
–1.0
–10
m
A
V
v
VDD – 0.025
2.7
3.3
3.0
0.025
4.0
5.0
v v
85°C
W
A
A
v
v
VDD = 16 V
0.5
v v
85°C
v v
85°C
v v
85°C
v v
85°C
20
24
20
24
35
40
35
40
28
33
28
33
45
50
45
50
nsec
nsec
nsec
nsec
0.5
0.1
1.0
0.15
mA
1. Switching times are guaranteed by design.
http://onsemi.com
3
NCP4413, NCP4414
+5 V
VDD = 16 V
4.7
µF
1, 8
INPUT
2
6, 7
OUTPUT
CL = 1800 pF
NCP4413
NCP4414
+5 V
INPUT
4, 5
0V
V DD
INPUT: 100 kHz, square wave,
tRISE = tFALL
≤10
nsec
OUTPUT
0V
tD1
10%
10%
90%
tR
0.1
µF
INPUT
0V
V DD
OUTPUT
0V
10%
Inverting Driver
NCP4413
10%
tD1
90%
tF
90%
tD2
tR
90%
10%
90%
90%
tD2
10%
tF
Noninverting driver
NCP4414
Figure 1. Switching Time Test Circuit
1600
1400
MAX. POWER (mV)
1200
1000
800
8 Pin SOIC
600
400
200
0
0
10
20
30
40
50
60
70
80
90
100
110
120
AMBIENT TEMOERATURE (°C)
Figure 2. Thermal Derating Curves
http://onsemi.com
4
NCP4413, NCP4414
TYPICAL CHARACTERISTICS
500
500
VIN = 3 V
400
I SUPPLY (
m
A)
I SUPPLY (
m
A)
VIN = 3 V
300
400
300
200
200
VIN = 0 V
100
VIN = 0 V
100
0
4
6
8
10
12
VDD (VOLTS)
14
16
0
–40
–20
0
20
40
TEMPERATURE (°C)
60
80
Figure 3. Quiescent Supply Current
vs. Supply Voltage
TA = 25°C
1.6
1.6
Figure 4. Quiescent Supply Current
vs. Temperature
VSUPPLY = 16 V
VTHRESHOLD,(VOLTS)
VIH
1.4
VTHRESHOLD,(VOLTS)
1.5
1.5
VIH
1.4
1.3
1.3
1.2
VIL
1.2
VIL
1.1
4
6
8
10
12
VDD (VOLTS)
14
16
1.1
–40
–20
0
20
40
TEMPERATURE (°C)
60
80
Figure 5. Input Threshold vs. Supply Voltage
TA = 25°C
Figure 6. Input Threshold vs. Temperature
VSUPPLY = 16 V
9
8
7
R ds, (ON) W
TA = 85°C
TA = 25°C
R ds, (ON) W
6
5
4
3
2
1
4
6
TA = – 40°C
8
10
VDD (VOLTS)
12
14
16
9
8
7
6
TA = 85°C
5
4
3
2
1
4
TA = – 40°C
6
8
10
VDD (VOLTS)
12
14
16
TA = 25°C
Figure 7. High–State Output Resistance
Figure 8. Low–State Output Resistance
http://onsemi.com
5

NCP4413DR2相似产品对比

NCP4413DR2 NCP4413P NCP4414DR2 NCP4414P
描述 3A BUF OR INV BASED MOSFET DRIVER, PDSO8, SO-8 3A BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8 3A BUF OR INV BASED MOSFET DRIVER, PDSO8, SO-8 3A BUF OR INV BASED MOSFET DRIVER, PDIP8, PLASTIC, DIP-8
是否Rohs认证 不符合 不符合 不符合 不符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 SOIC DIP SOIC DIP
包装说明 SOP, SOP8,.25 DIP, DIP8,.3 SOP, SOP8,.25 DIP, DIP8,.3
针数 8 8 8 8
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
高边驱动器 YES YES YES YES
接口集成电路类型 BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER BUFFER OR INVERTER BASED MOSFET DRIVER
JESD-30 代码 R-PDSO-G8 R-PDIP-T8 R-PDSO-G8 R-PDIP-T8
JESD-609代码 e0 e0 e0 e0
长度 4.9 mm 9.78 mm 4.9 mm 9.78 mm
功能数量 1 1 1 1
端子数量 8 8 8 8
最高工作温度 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
标称输出峰值电流 3 A 3 A 3 A 3 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP DIP SOP DIP
封装等效代码 SOP8,.25 DIP8,.3 SOP8,.25 DIP8,.3
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE IN-LINE SMALL OUTLINE IN-LINE
峰值回流温度(摄氏度) 240 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 4.5/16 V 4.5/16 V 4.5/16 V 4.5/16 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.75 mm 4.45 mm 1.75 mm 4.45 mm
最大供电电压 16 V 16 V 16 V 16 V
最小供电电压 4.5 V 4.5 V 4.5 V 4.5 V
表面贴装 YES NO YES NO
技术 CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 Tin/Lead (Sn80Pb20) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE
端子节距 1.27 mm 2.54 mm 1.27 mm 2.54 mm
端子位置 DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
断开时间 0.05 µs 0.05 µs 0.05 µs 0.05 µs
接通时间 0.05 µs 0.05 µs 0.05 µs 0.05 µs
宽度 3.9 mm 7.62 mm 3.9 mm 7.62 mm
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