NCP4413, NCP4414
3 A High-Speed MOSFET
Drivers
The NCP4413/4414 are 3 A CMOS buffer/drivers. They will not
latch up under any conditions within their power and voltage ratings.
They are not subject to damage when up to 5 V of noise spiking of
either polarity that occurs on the ground pin. They can accept,
without damage or logic upset, up to 500 mA of current of either
polarity being forced back into their output. All terminals are fully
protected against up to 4 kV of electrostatic discharge.
As MOSFET drivers, the NCP4413/4414 can easily switch
1800 pF gate capacitance in 20 nsec with matched rise and fall times,
and provide low enough impedance in both the ON and the OFF
states to ensure the MOSFET’s intended state will not be affected,
even by large transients. The rise and fall time edges are matched to
allow driving short–duration inputs with greater output accuracy.
Features
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MARKING
DIAGRAM
8
8
1
SO–8
D SUFFIX
CASE 751
1
NCP
441x
YWWXZ
8
PDIP–8
P SUFFIX
CASE 626
1
x
= Device Number (3 or 4)
YY, Y = Year
WW, W = Work Week
X
= Assembly ID Code
Z
= Subcontractor ID Code
CO
= Country of Origin
NCP441x
YYWWXZ
CO
•
•
•
•
•
•
•
•
•
•
Latch–up Protected: Will Withstand 500 mA Reverse Current
Input Will Withstand Negative Inputs Up to 5 V
ESD Protected (4 kV)
High Peak Output Current (3 A)
Wide Operating Range (4.5 V to 16 V)
High Capacitive Load Drive Capability (1800 pF in 20 nsec)
Short Delay Time (35 nsec Typ)
Consistent Delay Times with Changes in Supply Voltage
Matched Delay Times
Low Supply Current
With Logic “1” Input (500
m
A)
With Logic “0” Input (100
m
A)
•
Low Output Impedance (2.7
W
)
Functional Block Diagram
NCP4413
INVERTING
OUTPUTS
VDD
8
1
ORDERING INFORMATION
Device
NCP4413DR2
Inverting
NCP4413P
Inverting
NCP4414DR2
Non–Inverting
NCP4414P
Non–Inverting
Package
SO–8
PDIP–8
SO–8
PDIP–8
Shipping
2500 Tape & Reel
50 Units/Rail
2500 Tape & Reel
50 Units/Rail
300 mV
OUTPUT
NONINVERTING
OUTPUTS
INPUT
4.7 V
GND
EFFECTIVE
INPUT
C = 10 pF
NCP4414
©
Semiconductor Components Industries, LLC, 2000
1
June, 2000 – Rev. 0
Publication Order Number:
NCP4413/D
NCP4413, NCP4414
PIN CONNECTIONS
8–Pin SOIC/PDIP–8
VDD
IN
NC
GND
1
2
3
4
8
7
8–Pin SOIC/PDIP–8
VDD
2
6, 7
IN
NC
INVERTING
GND
1
2
3
4
8
7
VDD
OUT
OUT
GND
VDD
OUT
OUT
GND
NONINVERTING
2
6, 7
NCP4413
6
5
NCP4414
6
5
(Top View)
NC = NO INTERNAL CONNECTION
(Top View)
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NCP4413, NCP4414
ABSOLUTE MAXIMUM RATINGS*
Rating
Supply Voltage
Input Voltage, IN A or IN B
Maximum Chip Temperature
Storage Temperature Range
Lead Temperature (Soldering, 10 sec)
Package Thermal Resistance
SOIC
SOIC
Operating Temperature Range
Power Dissipation (TA
SOIC
Tstg
TSOI
R
θJA
R
θJC
TA
PD
Symbol
VDD
VIN
Value
+20
VDD + 0.3 to GND – 5.0
+150
–65 to +150
+300
155
45
–40 to +85
470
°C
mW
Unit
V
V
°C
°C
°C
°C/W
v
70°C)
*Static–sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses
above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those indicated in the operation section of the specifications is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Over operating temperature range with 4.5 V
Characteristic
Input
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch–Up Protection
Withstand Reverse Current
Switching Time (Note 1.)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Power Supply Current
IS
VIN = 3 V
VIN = 0 V
VDD = 16 V
tR
tF
tD1
tD2
Figure 1
Figure 1
Figure 1
Figure 1
TA = 25°C
– 40°C
TA
TA = 25°C
– 40°C
TA
TA = 25°C
– 40°C
TA
TA = 25°C
– 40°C
TA
VOH
VOL
RO
IPK
IREV
DC Test
DC Test
VDD = 16 V, IO = 10 mA TA = 25°C
– 40°C
TA
VDD = 16 V
Duty Cycle
2%
t
300
m
sec
VIH
VIL
IIN
0V
–
Symbol
Test Conditions
Typical values are measured at TA = 25°C; VDD = 16 V.)
v
VDD
v
16 V, unless otherwise specified.
Min
Typ
Max
Unit
2.0
–
TA = 25°C
– 40°C
TA
–
–
–
–
–
0.8
1.0
10
V
V
v
VIN
v
VDD
–
v v
85°C
–1.0
–10
m
A
V
v
VDD – 0.025
–
–
–
2.7
3.3
3.0
–
–
0.025
4.0
5.0
–
–
v v
85°C
–
–
–
W
A
A
v
v
VDD = 16 V
0.5
v v
85°C
v v
85°C
v v
85°C
v v
85°C
–
–
–
–
–
–
–
–
20
24
20
24
35
40
35
40
28
33
28
33
45
50
45
50
nsec
nsec
nsec
nsec
–
–
0.5
0.1
1.0
0.15
mA
1. Switching times are guaranteed by design.
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NCP4413, NCP4414
+5 V
VDD = 16 V
4.7
µF
1, 8
INPUT
2
6, 7
OUTPUT
CL = 1800 pF
NCP4413
NCP4414
+5 V
INPUT
4, 5
0V
V DD
INPUT: 100 kHz, square wave,
tRISE = tFALL
≤10
nsec
OUTPUT
0V
tD1
10%
10%
90%
tR
0.1
µF
INPUT
0V
V DD
OUTPUT
0V
10%
Inverting Driver
NCP4413
10%
tD1
90%
tF
90%
tD2
tR
90%
10%
90%
90%
tD2
10%
tF
Noninverting driver
NCP4414
Figure 1. Switching Time Test Circuit
1600
1400
MAX. POWER (mV)
1200
1000
800
8 Pin SOIC
600
400
200
0
0
10
20
30
40
50
60
70
80
90
100
110
120
AMBIENT TEMOERATURE (°C)
Figure 2. Thermal Derating Curves
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NCP4413, NCP4414
TYPICAL CHARACTERISTICS
500
500
VIN = 3 V
400
I SUPPLY (
m
A)
I SUPPLY (
m
A)
VIN = 3 V
300
400
300
200
200
VIN = 0 V
100
VIN = 0 V
100
0
4
6
8
10
12
VDD (VOLTS)
14
16
0
–40
–20
0
20
40
TEMPERATURE (°C)
60
80
Figure 3. Quiescent Supply Current
vs. Supply Voltage
TA = 25°C
1.6
1.6
Figure 4. Quiescent Supply Current
vs. Temperature
VSUPPLY = 16 V
VTHRESHOLD,(VOLTS)
VIH
1.4
VTHRESHOLD,(VOLTS)
1.5
1.5
VIH
1.4
1.3
1.3
1.2
VIL
1.2
VIL
1.1
4
6
8
10
12
VDD (VOLTS)
14
16
1.1
–40
–20
0
20
40
TEMPERATURE (°C)
60
80
Figure 5. Input Threshold vs. Supply Voltage
TA = 25°C
Figure 6. Input Threshold vs. Temperature
VSUPPLY = 16 V
9
8
7
R ds, (ON) W
TA = 85°C
TA = 25°C
R ds, (ON) W
6
5
4
3
2
1
4
6
TA = – 40°C
8
10
VDD (VOLTS)
12
14
16
9
8
7
6
TA = 85°C
5
4
3
2
1
4
TA = – 40°C
6
8
10
VDD (VOLTS)
12
14
16
TA = 25°C
Figure 7. High–State Output Resistance
Figure 8. Low–State Output Resistance
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