The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Package Limited.
Document Number: 69024
S-82664-Rev. A, 03-Nov-08
www.vishay.com
1
SiR484DP
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 10 A
0.8
15
5
8
7
T
C
= 25 °C
20
50
1.2
30
10
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 10 V, R
L
= 1
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
f = 1 MHz
0.4
V
DS
= 10 V, V
GS
= 10 V, I
D
= 17.2 A
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 17.2 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
830
280
112
15
7.1
2.7
1.6
1.9
15
12
16
10
6
10
17
8
3.8
23
18
24
20
12
20
26
15
ns
Ω
23
10.7
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 17.2 A
V
GS
= 4.5 V, I
D
= 14.6 A
V
DS
= 10 V, I
D
= 17.2 A
20
0.0069
0.0095
29
0.0083
0.0115
1.0
20
20
-5
2.5
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69024
S-82664-Rev. A, 03-Nov-08
SiR484DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10 thru 4
V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
8
10
30
V
GS
= 3
V
20
6
4
T
C
= 25 °C
2
T
C
= 125 °C
T
C
= - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.015
1200
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.012
900
V
GS
= 4.5
V
0.009
V
GS
= 10
V
0.006
C - Capacitance (pF)
C
iss
600
C
oss
300
0.003
C
rss
0.000
0
10
20
30
40
50
0
0
5
10
15
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 17.2 A
V
GS
- Gate-to-Source
Voltage
(V)
8
R
DS(on)
- On-Resistance
1.5
V
DS
= 10
V
6
V
DS
= 16
V
1.8
I
D
= 17.2 A
Capacitance
V
GS
= 10
V
(Normalized)
1.2
V
GS
= 4.5
V
4
0.9
2
0
0
4
8
12
16
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 69024
S-82664-Rev. A, 03-Nov-08
On-Resistance vs. Junction Temperature
www.vishay.com
3
SiR484DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.030
10
R
DS(on)
- On-Resistance (Ω)
0.024
I
S
- Source Current (A)
0.018
T
J
= 150 °C
T
J
= 25 °C
1
0.012
T
J
= 125 °C
0.006
T
J
= 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
0.000
0
1
2
3
4
5
6
7
8
9
10
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.9
40
On-Resistance vs. Gate-to-Source Voltage
1.6
V
GS(th)
(V)
Power (W)
150
30
1.3
I
D
= 250
µA
20
1.0
10
0.7
- 50
- 25
0
25
50
75
100
125
0
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
Single Pulse Power, Junction-to-Ambient
100
µA
10
I
D
- Drain Current (A)
1 ms
10 ms
1
100 ms
1s
10 s
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
DC
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 69024
S-82664-Rev. A, 03-Nov-08
SiR484DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
50
I
D
- Drain Current (A)
40
30
Package Limited
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
40
2.5
2.0
30
Power (W)
Power (W)
0
25
50
75
100
125
150
1.5
20
1.0
10
0.5
0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power Derating, Junction-to-Case
Power Derating, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
2008年7月9日, CombOLED 研究项目的工作重点是开发出高性价比的生产工艺，以实现有机发光二极管 (OLED) 的量产。欧司朗光电半导体公司固态照明部主管 Bernhard Stapp 表示：“该项目由欧盟提供资金支持，欧司朗负责协调运作，旨在为推行新型照明光源应用创造必要的条件。”这包括采用性价比卓越的方法构建新型元件架构，从而生产出大幅面透明光源。作为 LED 市场的创新推...[详细]
UHF和HF都是一般的技术分类，不过每一类都有独立的支持协议。HF在13.56MHz频段更具有一致性，虽然国际业内行业标准很多。UHF RFID在858-960MHz频段已商业化。同时也有多种国际标准支持，包括EPC global Gen 2。 标签与读写器通过无线链接交换数据。链接可以通过适合任何频段的、具有不同读取范围和抗干扰性的EMF或RF场实现。HF RFID技术主要通过电磁场传送信...[详细]
中风发生时，一切都是以秒来计算的。延误治疗可能导致大脑重大损伤。伦敦大学医学院的一位博士Alistair McEwan已经获得行为医学研究所(Action Medical Research)的同意，为急救人员开发一种无线诊断系统来减少时间延误。感谢抗血栓药物，一些病人在病情发作的三个小时之内可以完全恢复。但出血也会导致中风。医生在治疗之前需要确定发病原因，因为不适当的服用抗血栓药物会加重损害。...[详细]
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
