SiA533EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Source Drain Current Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d, e
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
4.5
a
4.5
a
4.5
a, b, c
4.5
a, b, c
20
4.5
a
N-Channel
12
±8
P-Channel
- 12
Unit
V
- 4.5
a
- 4.5
a
- 4.5
a, b, c
- 3.7
b, c
- 15
- 4.5
a
- 1.6
b, c
7.8
5
1.9
b, c
1.2
b, c
- 55 to 150
260
°C
W
A
1.6
b, c
7.8
5
1.9
b, c
1.2
b, c
Document Number: 65706
S10-0214-Rev. A, 25-Jan-10
www.vishay.com
1
New Product
SiA533EDJ
Vishay Siliconix
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Maximum Junction-to-Ambient
b, f
Maximum Junction-to-Case (Drain)
t
≤
5s
Steady State
Symbol
R
thJA
R
thJC
Typ.
52
12.5
Max.
65
16
P-Channel
Typ.
52
12.5
Max.
65
16
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
I
D
= 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 4.5 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 12 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= 12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
≥
5 V, V
GS
= 4.5 V
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 4.6 A
V
GS
= - 4.5 V, I
D
= - 3.6 A
V
GS
= 2.5 V, I
D
= 4.2 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= - 2.5 V, I
D
= - 3.1 A
V
GS
= 1.8 V, I
D
= 3.8 A
V
GS
= - 1.8 V, I
D
= - 2.6 A
V
GS
= 1.5 V, I
D
= 1.5 A
V
GS
= - 1.5 V, I
D
= - 0.5 A
Forward Transconductance
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
g
fs
C
iss
C
oss
C
rss
P-Channel
V
DS
= - 6 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 6 V, I
D
= 4.6 A
V
DS
= - 6 V, I
D
= - 3.6 A
N-Channel
V
DS
= 6 V, V
GS
= 0 V, f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
10
- 10
0.028
0.048
0.032
0.066
0.038
0.093
0.045
0.120
21
11
420
545
100
192
62
175
pF
0.034
0.059
0.040
0.081
0.050
0.115
0.070
0.215
S
Ω
0.4
- 0.4
12
- 12
19
- 5.7
- 2.7
1.7
1.0
- 1.0
± 0.5
± 0.5
±5
±5
1
-1
10
- 10
A
µA
V
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
www.vishay.com
2
Document Number: 65706
S10-0214-Rev. A, 25-Jan-10
New Product
SiA533EDJ
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Symbol
Test Conditions
V
DS
= 10 V, V
GS
= 10 V, I
D
= 5.9 A
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 4.7 A
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 5.9 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
P-Channel
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 4.7 A
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ.
10
13
5.6
7.8
0.7
1.3
0.85
2.3
3.5
7
Max.
15
20
8.5
12
Unit
Total Gate Charge
Q
g
nC
0.7
1.4
7
14
Ω
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
N-Channel
I
F
= 4.4 A, dI/dt = 100 A/µs, T
J
= 25 °C
P-Channel
I
F
= - 3.7 A, dI/dt = - 100 A/µs, T
J
= 25 °C
I
S
= 4.8 A, V
GS
= 0 V
I
S
= - 3.7 A, V
GS
= 0 V
T
C
= 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
4.5
- 4.5
20
- 15
1.2
- 1.2
20
50
10
20
Symbol
Test Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ.
10
15
10
15
20
25
10
10
5
5
10
10
20
25
10
10
Max.
15
25
15
25
30
40
15
15
10
10
15
15
30
40
15
15
Unit
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
N-Channel
V
DD
= 6 V, R
L
= 1.3
Ω
I
D
≅
4.8 A, V
GEN
= 4.5 V, R
g
= 1
Ω
P-Channel
V
DD
= - 6 V, R
L
= 1.6
Ω
I
D
≅
- 3.7 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
ns
N-Channel
V
DD
= 6 V, R
L
= 1.3
Ω
I
D
≅
4.8 A, V
GEN
= 8 V, R
g
= 1
Ω
P-Channel
V
DD
= - 6 V, R
L
= 1.6
Ω
I
D
≅
- 3.7 A, V
GEN
= - 8 V, R
g
= 1
Ω
A
0.85
- 0.87
10
25
5
10
5.5
17
4.5
8
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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