The PolarPAK is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Temperature)
d, e
Document Number: 74485
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
1
T
C
= 25 °C
T
C
= 70 °C
Maximum Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
SiE818DF
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a, b
Maximum Junction-to-Case (Drain Top)
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJC
(Drain)
R
thJC
(Source)
Typical
20
0.8
2.2
Maximum
24
1
2.7
°C/W
Unit
Maximum Junction-to-Case (Source)
a, c
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 68 °C/W.
c. Measured at source pin (on the side of the package).
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Current
a
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 75 V, V
GS
= 0 V
V
DS
= 75 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 16 A
V
GS
= 4.5
V, I
D
= 14 A
V
DS
= 20 V, I
D
= 16 A
1.5
75
78
- 7.1
2.1
V
mV/°C
3
± 100
1
10
0.0095
0.0125
V
nA
µA
A
0.0078
0.0103
50
3200
330
170
63
33
11
17
0.95
30
150
40
15
15
15
40
10
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
25
V
DS
= 38 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 38 V, V
GS
= 10 V, I
D
= 16 A
V
DS
= 38 V, V
GS
= 4.5 V, I
D
= 16 A
f = 1 MHz
V
DD
= 38 V, R
L
= 3.8
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
pF
95
50
nC
V
DD
= 38 V, R
L
= 3.8
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
1.5
45
225
60
25
25
25
60
15
60
80
1.2
150
520
Ω
ns
T
C
= 25 °C
I
S
= 10 A
0.8
100
345
75
25
I
SM
Pulse Diode Forward
V
SD
Body Diode Voltage
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
t
a
Reverse Recovery Fall Time
t
b
Reverse Recovery Rise Time
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
A
V
ns
nC
ns
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74485
S09-1338-Rev. B, 13-Jul-09
SiE818DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
80
V
GS
= 10
V
thru 4
V
16
I
D
- Drain Current (A)
60
I
D
- Drain Current (A)
12
T
C
= 125 °C
8
T
C
= 25 °C
20
40
20
3
V
0
0.0
4
T
C
= - 55 °C
0.5
1.0
1.5
2.0
0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.012
5000
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.011
V
GS
= 4.5
V
0.010
C - Capacitance (pF)
4000
C
iss
3000
0.009
2000
0.008
V
GS
= 10
V
1000
C
rss
0
10
C
oss
0.007
0
20
40
I
D
- Drain Current (A)
60
80
0
20
30
40
50
60
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 16 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 38
V
6
V
DS
= 60
V
4
R
DS(on)
- On-Resistance
2.2
2.0
1.8
1.6
(Normalized)
1.4
1.2
1.0
0.8
0.6
0
0
15
30
45
60
75
0.4
- 50
I
D
= 16 A
Capacitance
V
GS
= 10
V,
4.5
V
2
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 74485
S09-1338-Rev. B, 13-Jul-09
www.vishay.com
3
SiE818DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.030
I
D
= 16 A
0.025
T
J
= 150 °C
T
J
= 25 °C
10
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.020
125 °C
0.015
25 °C
0.010
0.005
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
0.000
2
4
6
8
10
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.6
2.4
I
D
= 250
µA
2.2
V
GS(th)
(V)
2.0
1.8
1.6
1.4
10
1.2
1.0
- 50
0
0.01
30
40
50
On-Resistance vs. Gate-to-Source Voltage
Po
w
er (
W
)
20
- 25
0
25
50
75
100
125
150
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100
µs
1 ms
10 ms
1
100 ms
T
A
= 25 °C
Single Pulse
1s
10 s
BVDSS Limited
0.01
0.01
*
V
GS
0.1
1
10
DC
100
0.1
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 74485
S09-1338-Rev. B, 13-Jul-09
SiE818DF
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
140
120
80
I
D
- Drain Current (A)
Po
w
er Dissipation (
W
)
100
80
60
40
20
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
60
Package Limited
40
20
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Case
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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