RN2907~RN2909
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2907, RN2908, RN2909
Unit: mm
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1907 to 1909
Equivalent Circuit and Bias Resistor Values
Type No.
RN2907
RN2908
RN2909
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
―
JEDEC
―
JEITA
2-2J1A
TOSHIBA
Weight: 6.8 mg (typ.)
Equivalent Circuit
(Top View)
Start of commercial production
1990-12
1
2014-03-01
RN2907~RN2909
Absolute Maximum Ratings
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2907 to 2909
RN2907
Emitter-base voltage
RN2908
RN2909
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2907 to 2909
I
C
P
C
*
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−100
200
150
−55
to 150
mA
mW
°C
°C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Total rating
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off
current
Symbol
I
CBO
I
CEO
Test
Circuit
―
―
―
I
EBO
―
―
―
h
FE
―
―
V
CE (sat)
―
―
V
I (ON)
―
―
―
V
I (OFF)
―
―
f
T
C
ob
―
―
―
R1
―
―
―
R1/R2
―
―
―
―
V
CE
=
−10V,
I
C
=
−5mA
V
CB
=
−10V,
I
E
= 0,
f = 1MHz
V
CE
=
−5V,
I
C
=
−0.1mA
V
CE
=
−0.2V,
I
C
=
−5mA
I
C
=
−5mA,
I
B
=
−0.25mA
V
CE
=
−5V,
I
C
=
−10mA
Test Condition
V
CB
=
−50V,
I
E
= 0
V
CE
=
−50V,
I
B
= 0
V
EB
=
−6V,
I
C
= 0
V
EB
=
−7V,
I
C
= 0
V
EB
=
−15V,
I
C
= 0
Min
―
―
−0.081
−0.078
−0.167
80
80
70
―
−0.7
−1.0
−2.2
−0.5
−0.6
−1.5
―
―
7
15.4
32.9
0.191
0.421
1.92
Typ.
―
―
―
―
―
―
―
―
−0.1
―
―
―
―
―
―
200
3
10
22
47
0.213
0.468
2.14
Max
−100
−500
−0.15
−0.145
−0.311
―
―
―
−0.3
−1.8
−2.6
−5.8
−1.0
−1.16
−2.6
―
6
13
28.6
61.1
0.232
0.515
2.35
―
kΩ
MHz
pF
V
V
V
―
mA
Unit
nA
nA
RN2907 to 2909
RN2907
Emitter cut-off
current
RN2908
RN2909
RN2907
DC current gain
RN2908
RN2909
Collector-emitter
saturation voltage
RN2907 to 2909
RN2907
Input voltage (ON)
RN2908
RN2909
RN2907
Input voltage (OFF)
RN2908
RN2909
Translation
frequency
Collector output
capacitance
RN2907 to 2909
RN2907 to 2909
RN2907
Input resistor
RN2908
RN2909
RN2907
Resistor ratio
RN2908
RN2909
2
2014-03-01
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
