Standard SRAM, 64KX1, 20ns, CDIP22
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant |
| 最长访问时间 | 20 ns |
| I/O 类型 | SEPARATE |
| JESD-30 代码 | R-XDIP-T22 |
| JESD-609代码 | e0 |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 1 |
| 负电源额定电压 | -5.2 V |
| 端子数量 | 22 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 64KX1 |
| 输出特性 | OPEN-EMITTER |
| 封装主体材料 | CERAMIC |
| 封装代码 | DIP |
| 封装等效代码 | DIP22,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 电源 | -5.2 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 最大压摆率 | 0.14 mA |
| 表面贴装 | NO |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| IDT10490S20DM | IDT10490S15DM | 10490S15D | 10490S10D | 10490S12Y | |
|---|---|---|---|---|---|
| 描述 | Standard SRAM, 64KX1, 20ns, CDIP22 | Standard SRAM, 64KX1, 15ns, CDIP22 | CDIP-22, Tube | CDIP-22, Tube | SOJ-24, Tube |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| 最长访问时间 | 20 ns | 15 ns | 15 ns | 10 ns | 12 ns |
| I/O 类型 | SEPARATE | SEPARATE | SEPARATE | SEPARATE | SEPARATE |
| JESD-30 代码 | R-XDIP-T22 | R-XDIP-T22 | R-CDIP-T22 | R-CDIP-T22 | R-PDSO-J24 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 1 | 1 | 1 | 1 | 1 |
| 负电源额定电压 | -5.2 V | -5.2 V | -5.2 V | -5.2 V | -5.2 V |
| 端子数量 | 22 | 22 | 22 | 22 | 24 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 75 °C | 75 °C | 75 °C |
| 组织 | 64KX1 | 64KX1 | 64KX1 | 64KX1 | 64KX1 |
| 输出特性 | OPEN-EMITTER | OPEN-EMITTER | OPEN-EMITTER | OPEN-EMITTER | OPEN-EMITTER |
| 封装主体材料 | CERAMIC | CERAMIC | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | DIP | DIP | SOJ |
| 封装等效代码 | DIP22,.3 | DIP22,.3 | DIP22,.3 | DIP22,.3 | SOJ24,.34 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | SMALL OUTLINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | -5.2 V | -5.2 V | -5.2 V | -5.2 V | -5.2 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大压摆率 | 0.14 mA | 0.14 mA | 0.17 mA | 0.17 mA | 0.17 mA |
| 表面贴装 | NO | NO | NO | NO | YES |
| 温度等级 | MILITARY | MILITARY | COMMERCIAL EXTENDED | COMMERCIAL EXTENDED | COMMERCIAL EXTENDED |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn85Pb15) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | J BEND |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| Brand Name | - | - | Integrated Device Technology | Integrated Device Technology | Integrated Device Technology |
| 是否无铅 | - | - | 含铅 | 含铅 | 含铅 |
| 零件包装代码 | - | - | CDIP | CDIP | SOJ |
| 包装说明 | - | - | DIP, DIP22,.3 | DIP, DIP22,.3 | SOJ, SOJ24,.34 |
| 针数 | - | - | 22 | 22 | 24 |
| 制造商包装代码 | - | - | CD22 | CD22 | PJ24 |
| 其他特性 | - | - | -170 SUPPLY CURRENT | -170 SUPPLY CURRENT | -170 SUPPLY CURRENT |
| 湿度敏感等级 | - | - | 1 | 1 | 3 |
| 功能数量 | - | - | 1 | 1 | 1 |
| 峰值回流温度(摄氏度) | - | - | 260 | 260 | 225 |
| 技术 | - | - | BICMOS | BICMOS | BICMOS |
| 处于峰值回流温度下的最长时间 | - | - | NOT SPECIFIED | NOT SPECIFIED | 30 |
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