Philips Semiconductors
Product specification
Triacs
BT139F series
GENERAL DESCRIPTION
Passivated triacs in a full pack, plastic
envelope, intended for use in
applications requiring high bidirectional
transient and blocking voltage capability
and high thermal cycling performance.
Typical applications include motor
control, industrial and domestic lighting,
heating and static switching.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BT139F-
BT139F-
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600
600F
600
16
140
MAX.
800
800
16
140
V
A
A
UNIT
PINNING - SOT186
PIN
1
2
3
DESCRIPTION
main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2
gate
1 2 3
T1
case isolated
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
full sine wave; T
hs
≤
38 ˚C
full sine wave; T
j
= 125 ˚C prior
to surge; with reapplied V
DRM(max)
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
T2+ G+
T2+ G-
T2- G-
T2- G+
CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-600
600
1
16
140
150
98
50
50
50
10
2
5
5
0.5
150
125
MAX.
-800
800
UNIT
V
A
A
A
A
2
s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
over any 20 ms period
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
July 2001
1
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT139F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from all
three terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
-
MAX.
1500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
12
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.0
5.5
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
CONDITIONS
BT139F-
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2- G+
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 20 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 ˚C
V
D
= V
DRM(max)
;
T
j
= 125 ˚C
MIN.
TYP.
...
-
-
-
-
-
-
-
-
-
-
-
0.25
-
5
8
10
22
7
20
8
10
6
1.2
0.7
0.4
0.1
35
35
35
70
40
60
40
60
30
1.6
1.5
-
0.5
MAX.
...F
25
25
25
70
40
60
40
60
30
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
UNIT
I
L
Latching current
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
July 2001
2
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT139F series
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
BT139F-
V
DM
= 67% V
DRM(max)
;
T
j
= 125 ˚C; exponential
waveform; gate open
circuit
V
DM
= 400 V; T
j
= 95 ˚C;
I
T(RMS)
= 16 A;
dI
com
/dt = 7.2 A/ms; gate
open circuit
I
TM
= 20 A; V
D
= V
DRM(max)
;
I
G
= 0.1 A; dI
G
/dt = 5 A/µs
...
100
MIN.
...F
50
TYP.
250
MAX.
-
UNIT
V/µs
dV
com
/dt
-
-
20
-
V/µs
t
gt
-
-
2
-
µs
July 2001
3
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT139F series
25
Ptot / W
Ths(max) / C
= 180
25
20
IT(RMS) / A
BT139X
20
1
120
90
45
38 C
15
15
60
30
65
10
85
10
5
105
5
0
0
5
10
IT(RMS) / A
15
125
20
0
-50
0
50
Ths / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
ITSM / A
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus heatsink temperature T
hs
.
IT(RMS) / A
1000
50
40
30
100
dI
T
/dt limit
T2- G+ quadrant
IT
T
10
10us
I TSM
time
20
10
Tj initial = 25 C max
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
IT
T
100
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
hs
≤
38˚C.
VGT(Tj)
VGT(25 C)
150
1.6
1.4
1.2
1
Tj initial = 25 C max
50
0.8
0.6
0
1
10
100
Number of cycles at 50Hz
1000
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
July 2001
4
Rev 1.200
Philips Semiconductors
Product specification
Triacs
BT139F series
3
2.5
2
1.5
IGT(Tj)
IGT(25 C)
T2+ G+
T2+ G-
T2- G-
T2- G+
50
IT / A
Tj = 125 C
Tj = 25 C
typ
Vo = 1.195 V
Rs = 0.018 Ohms
40
max
30
20
1
10
0.5
0
-50
0
0
0.5
1
1.5
VT / V
2
2.5
3
0
50
Tj / C
100
150
Fig.7. Normalised gate trigger current
I
GT
(T
j
)/ I
GT
(25˚C), versus junction temperature T
j
.
IL(Tj)
IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
10
Zth j-hs (K/W)
with heatsink compound
without heatsink compound
3
2.5
2
1.5
1
1
unidirectional
bidirectional
0.1
P
D
tp
0.01
0.5
0
-50
0.001
10us
0.1ms
1ms
10ms
tp / s
0.1s
1s
t
0
50
Tj / C
100
150
10s
Fig.8. Normalised latching current I
L
(T
j
)/ I
L
(25˚C),
versus junction temperature T
j
.
IH(Tj)
IH(25C)
Fig.11. Transient thermal impedance Z
th j-hs
, versus
pulse width t
p
.
dV/dt (V/us)
1000
off-state dV/dt limit
BT139 SERIES
3
2.5
2
1.5
1
0.5
100
BT139...F SERIES
dIcom/dt =
20 A/ms
10
16
12
9.3
7.2
5.6
0
-50
0
50
Tj / C
100
150
10
50
Tj / C
100
150
Fig.9. Normalised holding current I
H
(T
j
)/ I
H
(25˚C),
versus junction temperature T
j
.
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dI
T
/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
T
/dt.
July 2001
5
Rev 1.200
嵌入式系统
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