Data Sheet
Schottky Barrier Diode
RB530VM-30
Applications
General rectification
Dimensions
(Unit : mm)
1.25±0.1
0.1±0.1
0.05
Land
size figure
(Unit : mm)
0.8MIN.
0.9MIN.
1.7±0.1
2.5±0.2
Features
1)Ultra small mold type. (UMD2)
2)High reliability
UMD2
Construction
Silicon epitaxial planer
0.3±0.05
0.7±0.2
0.1
Structure
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-90/A
dot (year week factory)
Taping
dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.3±0.1
3.5±0.05
1.75±0.1
8.0±0.2
1.40±0.1
4.0±0.1
φ1.05
1.0±0.1
Absolute
maximum ratings
(Ta=25°C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive)
V
R
Reverse voltage (DC)
Average rectified forward current
Io
I
FSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
Limits
30
30
100
500
150
- 40 to +150
Unit
V
V
mA
mA
°C
°C
Electrical
characteristics
(Ta=25°C)
Parameter
Symbol
V
F
Forward voltage
Reverse current
I
R
Min.
-
-
Typ.
-
-
Max.
0.45
0.5
Unit
V
μA
I
F
=10mA
V
R
=10V
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© 2011 ROHM Co., Ltd. All rights reserved.
2.75
Conditions
1/4
2011.09 - Rev.A
2.8±0.1
2.1
RB530VM-30
Data Sheet
100
100000
Ta=125°C
Ta=125°C
10000
REVERSE CURRENT:I
R
(nA)
Ta=75°C
FORWARD CURRENT:I
F
(mA)
10
Ta=75°C
1
Ta=25°C
1000
Ta=25°C
100
Ta=−25°C
10
0.1
Ta=−25°C
0.01
0
100
200
300
400
500
600
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
1
0
10
20
30
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
100
f=1MHz
370
Ta=25°C
V
F
=10mA
n=30pcs
FORWARD VOLTAGE:V
F
(mV)
360
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
350
10
340
AVE:349.1mV
330
1
0
5
10
15
20
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
320
V
F
DISPERSION MAP
400
Ta=25°C
V
R
=10V
n=30pcs
300
20
Ta=25°C
f=1MHz
V
R
=0V
n=10pcs
REVERSE CURRENT:I
R
(nA)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
19
18
200
17
AVE:16.35pF
100
AVE:129.0nA
16
0
I
R
DISPERSION MAP
15
Ct DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.09 - Rev.A
RB530VM-30
Data Sheet
15
I
FSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
8.3ms
10
1cyc
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
10
I
FSM
8.3ms
8.3ms
1cyc
5
AVE:430A
5
0
I
FSM
DISPERSION MAP
0
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
10
1000
Mounted on epoxy board
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
I
FSM
t
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-a)
Rth(j-c)
100
5
0
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
100
10
0.001
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
0.1
0.01
0.08
FORWARD POWER
DISSIPATION:Pf(W)
D=1/2
0.06
DC
REVERSE POWER
DISSIPATION:P
R
(W)
0.005
DC
Sin(θ＝180)
0.04
D=1/2
0.02
Sin(θ＝180)
0
0
0.05
0.1
0.15
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
0.2
0
0
10
20
30
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.09 - Rev.A
RB530VM-30
Data Sheet
0.3
0A
0V
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
t
0.2
DC
T
Io
V
R
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D=t/T
V
R
=15V
Tj=150°C
0.3
0A
0V
t
0.2
DC
T
Io
V
R
D=t/T
V
R
=15V
Tj=150°C
D=1/2
0.1
Sin(θ＝180)
D=1/2
0.1
Sin(θ＝180)
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.09 - Rev.A
Notice
Notes
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http://www.rohm.com/contact/
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