BDS21R1: 产品描述Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO220M, 3 PIN; 产品类别分立半导体晶体管; 文件大小798KB，共2页; 制造商TT Electronics plc; 官网地址http://www.ttelectronics.com/; 标准

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BDS21R1概述

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO220M, 3 PIN

BDS21R1规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	TT Electronics plc
包装说明	HERMETIC SEALED, METAL, TO220M, 3 PIN
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	HIGH RELIABILITY
外壳连接	ISOLATED
最大集电极电流 (IC)	5 A
集电极-发射极最大电压	80 V
配置	DARLINGTON
最小直流电流增益 (hFE)	1000
JEDEC-95代码	TO-257AB
JESD-30 代码	S-MSFM-P3
JESD-609代码	e1
元件数量	1
端子数量	3
最高工作温度	200 °C
封装主体材料	METAL
封装形状	SQUARE
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	PNP
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN SILVER COPPER
端子形式	PIN/PEG
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	8 MHz

BDS21R1文档预览

SILICON EPIBASE PNP

DARLINGTON TRANSISTOR

BDS21

•

High DC Current Gain

Hermetic Metal TO-220 Package

Designed For General Purpose Amplifiers and

Low Speed Switching Applications

Screening Options Available

•

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

VCBO

VCEO

VEBO

Tstg

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

Base Current

TC = 25°C

Total Power Dissipation at

Derate Above 25°C

Junction Temperature Range

Storage Temperature Range

-80V

-5V

-5A

-0.1A

35W

0.2W/°C

-65 to +200°C

THERMAL PROPERTIES

Symbols

θJC

Parameters

Thermal Resistance, Junction To Case

Min.

Typ.

Max.

Units

°C/W

** This datasheet supersedes document 7603

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 8216

Issue 1

Page 1 of 2

Website:

http://www.semelab-tt.com

SILICON EPIBASE PNP

DARLINGTON TRANSISTOR

BDS21

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise stated)

Symbols

ICBO

Parameters

Collector-Cut-Off Current

Test Conditions

VCB = -80V

VCB = -60V

IE = 0

TC = 150°C

Min.

Typ

Max.

-0.2

-1.0

-0.5

-2

Units

ICEO

IEBO

hFE

(1)

Collector-Cut-Off Current

Emitter-Cut-Off Current

Forward-current transfer

ratio

(1)

VCE = -40V

VEB = -5V

IC = -0.5A

IC = -3A

IC = -5A

IC = -3A

IB = 0

IC = 0

VCE = -3V

IB = -12mA

IB = -20mA

VCE = -3V

1000

VCE(sat)

VBE(sat)

VBE(on)

Collector-Emitter Saturation

Voltage

Base-Emitter Saturation

Voltage

Base-Emitter On Voltage

-2

-4

-2.8

-3.5

(1)

DYNAMIC CHARACTERISTICS

Transition Frequency

IC = -0.5A

f = 2MHz

VCE = -4V

MHz

Notes

(1) Pulse Width

≤

300us,

δ ≤

10.6 (0.42)

0.8

(0.03)

4.6 (0.18)

MECHANICAL DATA

Dimensions in mm (inches)

16.5 (0.65)

3.70 Dia. Nom

1.5(0.53)

10.6 (0.42)

1 2 3

12.70 (0.50 min)

TO220M(TO-257AB)

Pin 1 – Base

Pin 2 – Collector

Pin 3 - Emitter

2.54 (0.1)

BSC

1.0

(0.039)

2.70

(0.106)