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BDS21

产品描述Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO220M, 3 PIN
产品类别分立半导体    晶体管   
文件大小798KB,共2页
制造商TT Electronics plc
官网地址http://www.ttelectronics.com/
下载文档 详细参数 选型对比 全文预览

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BDS21概述

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO220M, 3 PIN

BDS21规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称TT Electronics plc
包装说明HERMETIC SEALED, METAL, TO220M, 3 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性HIGH RELIABILITY
外壳连接ISOLATED
最大集电极电流 (IC)5 A
集电极-发射极最大电压80 V
配置DARLINGTON
最小直流电流增益 (hFE)1000
JEDEC-95代码TO-257AB
JESD-30 代码S-MSFM-P3
元件数量1
端子数量3
最高工作温度200 °C
封装主体材料METAL
封装形状SQUARE
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型PNP
认证状态Not Qualified
表面贴装NO
端子形式PIN/PEG
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)8 MHz

BDS21文档预览

SILICON EPIBASE PNP
DARLINGTON TRANSISTOR
BDS21
High DC Current Gain
Hermetic Metal TO-220 Package
Designed For General Purpose Amplifiers and
Low Speed Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
-80V
-80V
-5V
-5A
-0.1A
35W
0.2W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
5
Units
°C/W
** This datasheet supersedes document 7603
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8216
Issue 1
Page 1 of 2
Website:
http://www.semelab-tt.com
SILICON EPIBASE PNP
DARLINGTON TRANSISTOR
BDS21
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
ICBO
Parameters
Collector-Cut-Off Current
Test Conditions
VCB = -80V
VCB = -60V
IE = 0
IE = 0
TC = 150°C
Min.
Typ
Max.
-0.2
-1.0
-0.5
-2
Units
mA
ICEO
IEBO
hFE
(1)
Collector-Cut-Off Current
Emitter-Cut-Off Current
Forward-current transfer
ratio
(1)
VCE = -40V
VEB = -5V
IC = -0.5A
IC = -3A
IC = -3A
IC = -5A
IC = -5A
IC = -3A
IB = 0
IC = 0
VCE = -3V
VCE = -3V
IB = -12mA
IB = -20mA
IB = -20mA
VCE = -3V
1000
1000
VCE(sat)
VBE(sat)
VBE(on)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Base-Emitter On Voltage
-2
-4
V
-2.8
-3.5
(1)
(1)
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = -0.5A
f = 2MHz
VCE = -4V
8
MHz
Notes
(1) Pulse Width
300us,
δ ≤
2%
10.6 (0.42)
0.8
(0.03)
4.6 (0.18)
MECHANICAL DATA
Dimensions in mm (inches)
16.5 (0.65)
3.70 Dia. Nom
1.5(0.53)
10.6 (0.42)
1 2 3
12.70 (0.50 min)
TO220M(TO-257AB)
Pin 1 – Base
Pin 2 – Collector
Pin 3 - Emitter
2.54 (0.1)
BSC
1.0
(0.039)
2.70
(0.106)
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8216
Issue 1
Page 2 of 2

BDS21相似产品对比

BDS21 BDS21.MOD BDS21R1
描述 Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO220M, 3 PIN Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO220M, 3 PIN Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-257AB, Metal, 3 Pin, HERMETIC SEALED, METAL, TO220M, 3 PIN
是否Rohs认证 不符合 不符合 符合
厂商名称 TT Electronics plc TT Electronics plc TT Electronics plc
包装说明 HERMETIC SEALED, METAL, TO220M, 3 PIN HERMETIC SEALED, METAL, TO220M, 3 PIN HERMETIC SEALED, METAL, TO220M, 3 PIN
Reach Compliance Code compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
外壳连接 ISOLATED ISOLATED ISOLATED
最大集电极电流 (IC) 5 A 5 A 5 A
集电极-发射极最大电压 80 V 80 V 80 V
配置 DARLINGTON DARLINGTON DARLINGTON
最小直流电流增益 (hFE) 1000 1000 1000
JEDEC-95代码 TO-257AB TO-257AB TO-257AB
JESD-30 代码 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3
元件数量 1 1 1
端子数量 3 3 3
最高工作温度 200 °C 200 °C 200 °C
封装主体材料 METAL METAL METAL
封装形状 SQUARE SQUARE SQUARE
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO
端子形式 PIN/PEG PIN/PEG PIN/PEG
端子位置 SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON
标称过渡频率 (fT) 8 MHz 8 MHz 8 MHz
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