IRFB18N50K, SiHFB18N50K
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
120
34
54
Single
D
FEATURES
500
0.26
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Low R
DS(on)
• Lead (Pb)-free Available
TO-220
APPLICATIONS
G
S
G
D
S
N-Channel
MOSFET
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFB18N50KPbF
SiHFB18N50K-E3
IRFB18N50K
SiHFB18N50K
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
17
11
68
1.8
370
17
22
220
7.8
- 55 to + 150
300
d
10
W/°C
mJ
A
mJ
W
V/ns
°C
N
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. Starting T
J
= 25 °C, L = 2.5 mH, R
G
= 25
Ω,
I
AS
= 17 A.
c. I
SD
≤
17 A, dI/dt
≤
376 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
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1
IRFB18N50K, SiHFB18N50K
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
a
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
a
Note
a. R
th
is measured at T
J
approximately 90 °C.
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
58
-
0.56
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 10 A
b
500
-
3.0
-
-
-
-
6.4
-
0.59
-
-
-
-
0.26
-
-
-
5.0
± 100
50
250
0.29
-
V
V/°C
V
nA
µA
Ω
S
V
DS
= 50 V, I
D
= 10 A
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V
V
DS
= 400 V, f = 1.0 MHz
V
DS
= 0 V to 400 V
c
I
D
= 17 A, V
DS
= 400 V,
see fig. 6 and 13
b
V
GS
= 10 V
V
DD
= 250 V, I
D
= 17 A,
R
G
= 7.5
Ω,
see fig. 10
b
-
-
-
-
-
-
-
-
-
-
-
-
-
2830
330
38
3310
93
155
-
-
-
22
60
45
30
-
-
-
-
-
-
120
34
54
-
-
-
-
ns
nC
pF
-
-
-
-
-
-
-
-
520
5.3
17
A
68
1.5
780
8.0
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 17 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 17 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that givs the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
2
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IRFB18N50K, SiHFB18N50K
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
100.00
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
TJ = 150°C
10.00
1
1.00
0.1
TJ = 25°C
5.0V
0.10
0.01
20µs PULSE
WIDTH
Tj = 25°C
0.001
0.1
1
10
100
0.01
5.0
6.0
7.0
V
DS = 100V
20µs PULSE
WIDTH
8.0
9.0
10.0
V
DS, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics
V
GS , Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
3.0
ID, Drain-to-Source Current (A)
10
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
I
D
= 17A
2.5
2.0
5.0V
1
1.5
1.0
0.1
20µs PULSE
WIDTH
Tj = 150°C
0.01
0.1
1
10
100
0.5
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60
80
100 120 140 160
V
DS, Drain-to-Source
Voltage
(V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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3
IRFB18N50K, SiHFB18N50K
100000
I
SD
, Reverse Drain Current (A)
V
GS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
100
C, Capacitance(pF)
10000
T
J
= 150
°
C
10
Ciss
1000
T
J
= 25
°
C
1
Coss
100
Crss
10
1
10
100
1000
0.1
0.2
V
GS
= 0
V
0.5
0.8
1.1
1.4
V
DS, Drain-to-Source
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
,Source-to-Drain
Voltage
(V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I
D
=
17A
1000
V
GS
, Gate-to-Source
Voltage
(V)
16
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
10us
100us
1ms
1
10ms
12
10
8
4
0
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
100
1000
10000
0
30
60
90
120
150
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
4
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IRFB18N50K, SiHFB18N50K
20
V
GS
R
G
V
DS
R
D
D.U.T.
+
-
V
DD
I
D
, Drain Current (A)
15
10
V
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
10
Fig. 10a - Switching Time Test Circuit
V
DS
90
%
5
0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
Thermal Response(Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15
V
V
DS
t
p
V
DS
L
Driver
R
G
20
V
t
p
D.U.T.
I
AS
0.01
Ω
+
A
-
V
DD
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
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