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M36W0R6040B0ZAQE

产品描述Memory Circuit, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
产品类别存储    存储   
文件大小347KB,共18页
制造商Numonyx ( Micron )
官网地址https://www.micron.com
下载文档 详细参数 选型对比 全文预览

M36W0R6040B0ZAQE概述

Memory Circuit, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88

M36W0R6040B0ZAQE规格参数

参数名称属性值
厂商名称Numonyx ( Micron )
零件包装代码BGA
包装说明TFBGA,
针数88
Reach Compliance Codeunknown
其他特性PSRAM IS ORGANIZED AS 1M X 16
JESD-30 代码R-PBGA-B88
JESD-609代码e1
长度10 mm
内存密度67108864 bit
内存集成电路类型MEMORY CIRCUIT
内存宽度16
功能数量1
端子数量88
字数4194304 words
字数代码4000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-30 °C
组织4MX16
封装主体材料PLASTIC/EPOXY
封装代码TFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.2 mm
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.7 V
表面贴装YES
技术CMOS
温度等级OTHER
端子面层TIN SILVER COPPER
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度8 mm

M36W0R6040B0ZAQE相似产品对比

M36W0R6040B0ZAQE M36W0R6040T0ZAQE M36W0R6040T0ZAQT M36W0R6040T0ZAQ M36W0R6040T0ZAQF M36W0R6040B0ZAQT
描述 Memory Circuit, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 Memory Circuit, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 Memory Circuit, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88 Memory Circuit, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88 Memory Circuit, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88 Memory Circuit, 4MX16, CMOS, PBGA88, 8 X 10 MM, 0.80 MM PITCH, TFBGA-88
厂商名称 Numonyx ( Micron ) Numonyx ( Micron ) Numonyx ( Micron ) Numonyx ( Micron ) Numonyx ( Micron ) Numonyx ( Micron )
零件包装代码 BGA BGA BGA BGA BGA BGA
包装说明 TFBGA, TFBGA, TFBGA, TFBGA, TFBGA, TFBGA,
针数 88 88 88 88 88 88
Reach Compliance Code unknown unknown unknown unknown unknown unknown
其他特性 PSRAM IS ORGANIZED AS 1M X 16 PSRAM IS ORGANIZED AS 1M X 16 PSRAM IS ORGANIZED AS 1M X 16 PSRAM IS ORGANIZED AS 1M X 16 PSRAM IS ORGANIZED AS 1M X 16 PSRAM IS ORGANIZED AS 1M X 16
JESD-30 代码 R-PBGA-B88 R-PBGA-B88 R-PBGA-B88 R-PBGA-B88 R-PBGA-B88 R-PBGA-B88
JESD-609代码 e1 e1 e0 e0 e1 e0
长度 10 mm 10 mm 10 mm 10 mm 10 mm 10 mm
内存密度 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit
内存集成电路类型 MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
内存宽度 16 16 16 16 16 16
功能数量 1 1 1 1 1 1
端子数量 88 88 88 88 88 88
字数 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words
字数代码 4000000 4000000 4000000 4000000 4000000 4000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -30 °C -30 °C -30 °C -30 °C -30 °C -30 °C
组织 4MX16 4MX16 4MX16 4MX16 4MX16 4MX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TFBGA TFBGA TFBGA TFBGA TFBGA TFBGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度) 260 260 NOT SPECIFIED NOT SPECIFIED 260 NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
最大供电电压 (Vsup) 1.95 V 1.95 V 1.95 V 1.95 V 1.95 V 1.95 V
最小供电电压 (Vsup) 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V 1.7 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 OTHER OTHER OTHER OTHER OTHER OTHER
端子面层 TIN SILVER COPPER TIN SILVER COPPER TIN LEAD TIN LEAD TIN SILVER COPPER TIN LEAD
端子形式 BALL BALL BALL BALL BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 8 mm 8 mm 8 mm 8 mm 8 mm 8 mm

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