CM1000E3U-34NF
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Mega Power
Chopper IGBTMOD™
1000 Amperes/1700 Volts
U
H H
A
D
G
TC MEASURED POINTS
(BASEPLATE SIDE)
L
W
K
C2E1
S
AC
C2
AB
C1
X J
F
G2
E2
E1
G1
Y CB
Z
F
E
T
J
E2
C1
U
V
H H H H H H
G
G
AA
L
R (9 PLACES) M
LABEL
P
C2
G2
E2
C2E1
E2
FREE-WHEEL DIODE
CLAMP DIODE
C1
C1 (NC)
G1 (NC)
E1 (NC)
Description:
Powerex Chopper IGBTMOD™
Modules are designed for use in
switching applications. Each
module consists of one IGBT
Transistor having a reverse-
connected super-fast recovery
free-wheel diode and an anode-
collector connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£
Low Drive Power
£
Low V
CE(sat)
£
Discrete Super-Fast Recovery
Free-Wheel Diode
£
Isolated Baseplate for Easy
Heat Sinking
Applications:
£
High Power DC Power Supply
£
Large DC Motor Drives
£
Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM1000E3U-34NF
is a 1000V (V
CES
), 1700 Ampere
Chopper IGBTMOD Power
Module.
Type
CM
Current Rating
Amperes
1000
V
CES
Volts (x 50)
34
1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
5.91
5.10
1.67±0.01
5.41±0.01
6.54
2.91±0.01
1.65
0.55
1.50±0.01
0.16
Millimeters
150.0
129.5
42.5±0.25
137.5±0.25
166.0
74.0±0.25
42.0
14.0
38.0±0.25
4.0
Dimensions
M
P
R
U
V
W
X
Y
Z
AA
AB
AC
Inches
0.075±0.008
1.0
M6 Metric
0.62
0.71
0.75
0.43
0.83
0.41
0.22
0.47
0.08
Millimeters
1.9±0.2
25.1
M6
15.7
18.0
19.0
11.0
21.0
10.5
5.5
12.0
2.0
1.36 +0.04/-0.02 34.6 +1.0/-0.5
Housing Type (J.S.T. MFG. CO. LTD)
S = VHR-2N
T = VHR-5N
04/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM1000E3U-34NF
Mega Power Chopper IGBTMOD™
1000 Amperes/1700 Volts
Absolute Maximum Ratings,
T
j
= 25°C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
*7
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current DC (T
C
= 104°C)
*6
Peak Collector Current (Pulse)
*2
Emitter Current (T
C
= 25°C)
*4
Peak Emitter Current (Pulse)
*2
Maximum Collector Dissipation (T
C
= 25°C)
*2*4
Mounting Torque, M6 Mounting Screws (Max.)
Mounting Torque, M6 Main Terminal Screw (Max.)
Weight (Typical)
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
*1
I
EM
*1
P
C
–
–
–
V
iso
CM1000E3U-34NF
-40 to 150
-40 to 125
1700
±20
1000
2000
75
150
3900
40
40
1400
3500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
Grams
V
rms
Clamp Diode Part,
T
j
= 25°C unless otherwise specified
Repetitive Peak Reverae Voltage
Forward Current (T
C
= 25°C)
*4
Peak Forward Current (Pulse)
*2
V
RRM
I
F
I
FM
1700
1000
2000
Volts
Amperes
Amperes
*1 I
E
, I
EM
, and V
EC
represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
*4 Case temperature (T
C
) is baseplate side.
*6 Case temperature (T
C
') and heatsink temperature (T
f
') measured point is just under the chips.
*7 The operation temperature is restrained by the permission temperature of female connector housing.
Chip Location (Top View)
IGBT
Clamp Diode
Diode
39.2
48.4 46.6
0
10.6
23.2
35.8
52.2
64.8
77.4
93.6
106.2
118.8
10.5
23.4
36.2
52.0
64.8
77.7
93.5
106.4
119.2
0
98.6
0
48.4
0
2
51.4
Dimensions in mm (Tolerance: ±1mm)
04/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM1000E3U-34NF
Mega Power Chopper IGBTMOD™
1000 Amperes/1700 Volts
Electrical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
(Without Lead Resistance)
Module Lead Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Emitter-Collector Voltage
*1
External Gate Resistance
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
(Chip)
R
(lead)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
EC
R
G
V
CC
= 1000V, I
C
= 1000A, V
GE
= 15V
V
CC
= 1000V, I
C
= 1000A,
V
GE
= ±15V,
R
G
= 0.47Ω,
Inductive Load
I
E
= 75A, V
GE
= 0V
*3
V
CE
= 10V, V
GE
= 0V
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 100mA, V
CE
= 10V
I
C
= 1000A, V
GE
= 15V, T
j
= 25°C
*3
I
C
= 1000A, V
GE
= 15V, T
j
= 125°C
*3
I
C
= 1000A, Terminal-Chip
Min.
–
–
5.5
–
–
–
–
–
–
–
–
–
–
–
–
0.47
Typ.
–
–
7
2.2
2.45
0.286
–
–
–
6000
–
–
–
–
–
–
Max.
1
0.5
8.5
2.8
–
–
220
25
4.7
–
600
150
900
200
2.8
4.7
Units
mA
μA
Volts
Volts
Volts
mΩ
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Ω
Clamp Diode Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Repetitive Peak Reverse Current
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
I
RRM
V
FM
t
rr
Q
rr
Test Conditions
V
R
= V
RRM
I
F
=1000A
*3
I
F
=1000A
I
F
=1000A
Min.
–
–
–
–
Typ.
–
–
–
90
Max.
1
3.0
450
–
Units
mA
Volts
ns
μC
Thermal and Mechanical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
*4
Thermal Resistance, Junction to Case
*4
Thermal Resistance, Junction to Case
*6
Thermal Resistance, Junction to Case
*6
Thermal Resistance, Junction to Case
*4
Contact Thermal Resistance
*6
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(j-c')
Q
R
th(j-c')
D
R
th(c-f)
D
R
th(c-f)
Test Conditions
IGBT
Clamp
IGBT
Clamp
Thermal Grease Applied per 1/2 Module
*5
Thermal Grease Applied per 1/2 Module
*5
Min.
–
–
–
–
–
–
Typ.
–
–
–
–
0.016
0.012
Max.
0.032
0.053
0.014
0.023
–
–
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
*1 I
E
, I
EM
, and V
EC
represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 Case temperature (T
C
) is baseplate side.
*5 Typical value is measured by using thermally conductive grease of
λ
= 0.9 [W/(m • K)].
*6 Case temperature (T
C
') and heatsink temperature (T
f
') measured point is just under the chips.
04/09
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM1000E3U-34NF
Mega Power Chopper IGBTMOD™
1000 Amperes/1700 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
2000
COLLECTOR CURRENT, I
C
, (AMPERES)
1600
1200
800
400
15
13
V
GE
= 20V
12
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
T
j
= 25°C
COLLECTOR CURRENT, I
C
, (AMPERES)
2000
1600
1200
800
400
0
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
5
4
3
2
1
0
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
11
10
8
9
0
0
2
4
6
8
10
0
4
8
12
16
20
0
400
800
1200
1600
2000
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
4
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
EMITTER CURRENT, I
E
, (AMPERES)
10
3
V
GE
= 0V
C
ies
8
6
4
2
0
I
C
= 400A
I
C
= 1000A
I
C
= 2000A
10
2
10
3
10
1
C
oes
C
res
10
0
T
j
= 25°C
T
j
= 125°C
0
4
8
12
16
20
10
2
0.5 1.0
1.5
2.0
2.5 3.0
3.5
4.0
10
-1
10
-1
10
0
10
1
10
2
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, VGE
10
4
REVERSE RECOVERY TIME, t
rr
, (ns)
10
4
10
4
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 1000A
V
CC
= 800V
V
CC
= 1000V
16
12
8
4
0
SWITCHING TIME, (ns)
10
3
t
d(off)
t
d(on)
t
f
10
3
I
rr
t
rr
V
CC
= 1000V
V
GE
= ±15V
R
G
= 0.47Ω
T
j
= 25°C
Inductive Load
10
3
10
2
t
r
10
1
10
2
V
CC
= 1000V
V
GE
= ±15V
R
G
= 0.47Ω
T
j
= 125°C
Inductive Load
10
3
COLLECTOR CURRENT, I
C
, (AMPERES)
10
4
10
2
10
2
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
10
4
0
2000
4000
6000
8000 10000
GATE CHARGE, Q
G
, (nC)
4
04/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM1000E3U-34NF
Mega Power Chopper IGBTMOD™
1000 Amperes/1700 Volts
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
Single Pulse
T
C
= 25°C
Per Unit Base
R
th(j-c')
=
0.014°C/W
(IGBT)
R
th(j-c')
=
0.023°C/W
(Clamp)
10
2
REVERSE RECOVERY ENERGY, E
rr
, (mJ/PULSE)
10
0
10
-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & CLAMP DIODE)
10
-2
10
-1
10
0
10
1
SWITCHING LOSS, E
on
, E
off
, (mJ/PULSE)
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
10
3
REVERSE RECOVERY ENERGY VS.
FORWARD CURRENT
(TYPICAL)
10
3
10
2
10
-2
10
1
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
0
10
2
V
CC
= 1000V
V
GE
= 15V
T
j
= 125°C
R
G
= 0.47Ω
E
on
E
off
Inductive Load
10
1
10
3
COLLECTOR CURRENT, I
C
, (AMPERES)
10
4
10
0
10
2
V
CC
= 1000V
V
GE
= 15V
T
j
= 125°C
R
G
= 0.47Ω
Inductive Load
10
3
FORWARD CURRENT, I
F
, (AMPERES)
10
4
SWITCHING ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY ENERGY, E
rr
, (mJ/PULSE)
REVERSE RECOVERY ENERGY VS.
EXTERNAL GATE RESISTANCE
(TYPICAL)
10
3
SWITCHING LOSS, E
on
, E
off
, (mJ/PULSE)
10
3
10
2
V
CC
= 1000V
V
GE
= ±15V
T
j
= 125°C
I
C
= 1000A
E
on
E
off
Inductive Load
10
2
V
CC
= 1000V
V
GE
= ±15V
T
j
= 125°C
I
C
= 1000A
Inductive Load
10
1
0
1
2
3
4
5
10
1
0
1
2
3
4
5
EXTERNAL GATE RESISTANCE, R
G
, (Ω)
EXTERNAL GATE RESISTANCE, R
G
, (Ω)
04/09
5
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