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JANSR2N3501UB: 产品描述Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, CERAMIC PACKAGE-3; 产品类别分立半导体晶体管; 文件大小598KB，共8页; 制造商Microsemi; 官网地址https://www.microsemi.com; 标准

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JANSR2N3501UB概述

Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, CERAMIC PACKAGE-3

JANSR2N3501UB规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
包装说明	SMALL OUTLINE, R-CDSO-N3
Reach Compliance Code	compli
ECCN代码	EAR99
其他特性	HIGH RELIABILITY
最大集电极电流 (IC)	0.3 A
集电极-发射极最大电压	150 V
配置	SINGLE
最小直流电流增益 (hFE)	20
JESD-30 代码	R-CDSO-N3
JESD-609代码	e4
元件数量	1
端子数量	3
最高工作温度	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	NPN
认证状态	Qualified
参考标准	MIL-19500; RH - 100K Rad(Si)
表面贴装	YES
端子面层	Gold (Au) - with Nickel (Ni) barrie
端子形式	NO LEAD
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
最大关闭时间（toff）	1150 ns
最大开启时间（吨）	115 ns
Base Number Matches	1

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JANS 2N3501UB

RADIATION HARDENED

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/366

DESCRIPTION

This family of JANS 2N3501, epitaxial, planar transistors are military qualified in five RHA

(Radiation Hardness Assurance) levels for high-reliability applications. These devices are

also available in TO-5 and low profile TO-39 packaging. Microsemi also offers numerous

other transistor products to meet higher and lower power ratings with various switching speed

requirements in both through-hole and surface-mount packages.

compliant

Qualified Levels:

JANSM, JANSD,

JANSP, JANSL, and

JANSR

Important:

For the latest information, visit our website

http://www.microsemi.com.

FEATURES

•

Surface mount equivalent of JEDEC registered 2N3501 number.

RHA level JAN qualifications per MIL-PRF-19500/366 (see

part nomenclature

for all options).

RoHS compliant by design.

UB Package

Also available in:

APPLICATIONS / BENEFITS

•

General purpose transistors for medium power applications requiring high frequency switching.

Low profile ceramic package.

Lightweight.

Military and other high-reliability applications.

TO-5 package

(long-leaded)

2N3498L – 2N3501L

TO-39

(TO-205AD)

package

(leaded)

2N3498 – 2N3501

MAXIMUM RATINGS

@ T

= +25 ºC unless otherwise noted

Parameters / Test Conditions

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Thermal Resistance Junction-to-Ambient

Total Power Dissipation

@ T

= +25 °C

(2)

@ T

= +25 °C

(1)

Symbol

CEO

CBO

EBO

ӨJA

, T

stg

Value

150

6.0

300

325

0.5

1.5

-65 to +200

Unit

C/W

°C

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Operating & Storage Junction Temperature Range

Notes:

1. See

figure 1.

2. See

figure 2.

T4-LDS-0056-2, Rev. 1 (121223)

Page 1 of 8

JANSR2N3501UB相似产品对比

	JANSR2N3501UB	JANSD2N3501UB/TR	JANSD2N3501UB	JANSM2N3501UB	JANSM2N3501UB/TR	JANSL2N3501UB/TR	JANSL2N3501UB	JANSP2N3501UB/TR	JANSP2N3501UB
描述	Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, CERAMIC PACKAGE-3	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, CERAMIC PACKAGE-3	Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, CERAMIC PACKAGE-3	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, CERAMIC PACKAGE-3	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 0.3A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, CERAMIC PACKAGE-3
是否Rohs认证	符合	不符合	符合	符合	不符合	不符合	符合	不符合	符合
包装说明	SMALL OUTLINE, R-CDSO-N3	,	SMALL OUTLINE, R-CDSO-N3	SMALL OUTLINE, R-CDSO-N3	,	,	SMALL OUTLINE, R-CDSO-N3	,	SMALL OUTLINE, R-CDSO-N3
Reach Compliance Code	compli	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	-	EAR99	EAR99	-	-	EAR99	-	EAR99
其他特性	HIGH RELIABILITY	-	HIGH RELIABILITY	HIGH RELIABILITY	-	-	HIGH RELIABILITY	-	HIGH RELIABILITY
最大集电极电流 (IC)	0.3 A	-	0.3 A	0.3 A	-	-	0.3 A	-	0.3 A
集电极-发射极最大电压	150 V	-	150 V	150 V	-	-	150 V	-	150 V
配置	SINGLE	-	SINGLE	SINGLE	-	-	SINGLE	-	SINGLE
最小直流电流增益 (hFE)	20	-	20	20	-	-	20	-	20
JESD-30 代码	R-CDSO-N3	-	R-CDSO-N3	R-CDSO-N3	-	-	R-CDSO-N3	-	R-CDSO-N3
JESD-609代码	e4	-	e4	e4	-	-	e4	-	e4
元件数量	1	-	1	1	-	-	1	-	1
端子数量	3	-	3	3	-	-	3	-	3
最高工作温度	200 °C	-	200 °C	200 °C	-	-	200 °C	-	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	-	-	CERAMIC, METAL-SEALED COFIRED	-	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR	-	RECTANGULAR
封装形式	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	-	-	SMALL OUTLINE	-	SMALL OUTLINE
极性/信道类型	NPN	-	NPN	NPN	-	-	NPN	-	NPN
认证状态	Qualified	-	Qualified	Qualified	-	-	Qualified	-	Qualified
参考标准	MIL-19500; RH - 100K Rad(Si)	-	MIL-19500; RH - 10K Rad(Si)	MIL-19500; RH - 3K Rad(Si)	-	-	MIL-19500; RH - 50K Rad(Si)	-	MIL-19500; RH - 30K Rad(Si)
表面贴装	YES	-	YES	YES	-	-	YES	-	YES
端子面层	Gold (Au) - with Nickel (Ni) barrie	-	Gold (Au) - with Nickel (Ni) barrier	Gold (Au) - with Nickel (Ni) barrier	-	-	Gold (Au) - with Nickel (Ni) barrier	-	Gold (Au) - with Nickel (Ni) barrier
端子形式	NO LEAD	-	NO LEAD	NO LEAD	-	-	NO LEAD	-	NO LEAD
端子位置	DUAL	-	DUAL	DUAL	-	-	DUAL	-	DUAL
晶体管应用	SWITCHING	-	SWITCHING	SWITCHING	-	-	SWITCHING	-	SWITCHING
晶体管元件材料	SILICON	-	SILICON	SILICON	-	-	SILICON	-	SILICON
最大关闭时间（toff）	1150 ns	-	1150 ns	1150 ns	-	-	1150 ns	-	1150 ns
最大开启时间（吨）	115 ns	-	115 ns	115 ns	-	-	115 ns	-	115 ns
Base Number Matches	1	1	1	1	1	-	-	-	-
厂商名称	-	Microsemi	Microsemi	-	-	Microsemi	Microsemi	Microsemi	Microsemi

JANSR2N3501UB

JANSR2N3501UB在线购买

JANSR2N3501UB概述

JANSR2N3501UB规格参数

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