SM2150B
THRU
SM2200B
2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE
150 to 200 Volts
CURRENT
FEATURES
* Ideal for surface mount applications
* Easy pick and place
* Built-in strain relief
* Low forward voltage drop
.083(2.11)
.075(1.91)
2.0 Amperes
DO-214AA(SMB)
.155(3.94)
.130(3.30)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Metallurgically bonded construction
* Polarity: Color band denotes cathode end
* Mounting position: Any
.096(2.44)
.083(2.13)
.050(1.27)
.030(0.76)
.185(4.70)
.160(4.06)
.012(0.31)
.006(0.15)
.008
MAX.
(.203)
.220(5.59)
.200(5.08)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
L
=100 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 2.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance R JL (Note 2)
Operating Temperature Range T
J
Storage Temperature Range T
STG
NOTES:
SM2150B
150
105
150
2.0
50
0.92
0.5
10
170
15
-65 +150
-65 +150
SM2200B
200
140
200
UNITS
V
V
V
A
A
V
mA
mA
PF
C/W
C
C
Ta=100 C
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Lead.
410
RATING AND CHARACTERISTIC CURVES (SM2150B THRU SM2200B)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
2.4
2.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
1.6
1.2
0.8
0.4
0
0
20
40
60
80
100
120
140
160
180
200
10
3.0
1.0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
LEAD TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
0.1
PEAK FORWARD SURGE CURRENT,(A)
40
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
30
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
FORWARD VOLT
AGE,(V)
20
10
FIG.5 - TYPICAL REVERSE
0
1
5
10
50
100
CHARACTERISTICS
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
700
600
500
400
300
200
100
0
REVERSE LEAKAGE CURRENT, (mA)
10
JUNCTION CAPACITANCE,(pF)
Tj=100 C
1.0
.1
Tj=25 C
.01
.05
.1
.5
1
5
10
50
100
.01
0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENTAGE RATED PEAK REVERSE VOL
TAGE
411
NXP MCU
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