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MBD54DWT1

产品描述0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, MINIATURE, CASE 419B-02, SC-88, SC-70, 6 PIN
产品类别分立半导体    二极管   
文件大小733KB,共5页
制造商Rochester Electronics
官网地址https://www.rocelec.com/
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MBD54DWT1概述

0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, MINIATURE, CASE 419B-02, SC-88, SC-70, 6 PIN

MBD54DWT1规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Rochester Electronics
零件包装代码SC-70
包装说明R-PDSO-G6
针数6
制造商包装代码CASE 419B-02
Reach Compliance Codeunknown
配置SEPARATE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PDSO-G6
JESD-609代码e0
湿度敏感等级NOT SPECIFIED
元件数量2
端子数量6
最大输出电流0.2 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)240
最大功率耗散0.15 W
认证状态COMMERCIAL
最大反向恢复时间0.005 µs
表面贴装YES
技术SCHOTTKY
端子面层TIN LEAD
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间30

MBD54DWT1文档预览

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MBD54DWT1
Preferred Device
Dual Schottky Barrier
Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
http://onsemi.com
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V @ I
F
= 10 mAdc
Pb−Free Package is Available
30 VOLTS
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
Anode 1
6 Cathode
5 N/C
4 Anode
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current (DC)
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
F
150
1.2
I
F
T
J
T
stg
200 Max
125 Max
−55 to +150
mW
mW/°C
mA
°C
°C
Value
30
Unit
V
N/C 2
Cathode 3
MARKING
DIAGRAM
6
SOT−363
CASE 419B−01
STYLE 6
1
M = Date Code
BL
M
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1
ORDERING INFORMATION
Device
MBD54DWT1
MBD54DWT1G
Package
SOT−363
SOT−363
(Pb−Free)
Shipping
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
February, 2005 − Rev. 6
Publication Order Number:
MBD54DWT1/D
MBD54DWT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage (I
R
= 10
mA)
Total Capacitance (V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage (V
R
= 25 V)
Forward Voltage (I
F
= 0.1 mAdc)
Forward Voltage (I
F
= 30 mAdc)
Forward Voltage (I
F
= 100 mAdc)
Reverse Recovery Time (I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc)
(Figure 1)
Forward Voltage (I
F
= 1.0 mAdc)
Forward Voltage (I
F
= 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current (t < 1.0 s)
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
V
F
t
rr
V
F
V
F
I
F
I
FRM
I
FSM
Min
30
Typ
7.6
0.5
0.22
0.41
0.52
0.29
0.35
Max
10
2.0
0.24
0.5
1.0
5.0
0.32
0.40
200
300
600
Unit
V
pF
mAdc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
820
W
+10 V
2k
100
mH
0.1
mF
DUT
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
90%
V
R
INPUT SIGNAL
I
R
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
0.1
mF
t
r
10%
t
p
t
I
F
t
rr
t
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
MBD54DWT1
100
IR , REVERSE CURRENT (µA)
IF, FORWARD CURRENT (mA)
1000
T
A
= 150°C
100
T
A
= 125°C
10
1.0
T
A
= 85°C
0.1
0.01
T
A
= 25°C
0.5
0.6
0.001
0
5
10
15
20
V
R
, REVERSE VOLTAGE (VOLTS)
25
30
10
150
°C
125
°C
1.0
85°C
25°C
−40
°C
−55
°C
0.4
0.1
0.0
0.1
0.2
0.3
V
F
, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
14
C T , TOTAL CAPACITANCE (pF)
12
10
8
6
4
2
0
0
5
10
15
20
Figure 3. Leakage Current
25
30
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Total Capacitance
http://onsemi.com
3
MBD54DWT1
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE V
D
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
ANODE 2
N/C
CATHODE 1
ANODE 1
N/C
CATHODE 2
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
6
5
4
H
E
1
2
3
−E−
b
6 PL
0.2 (0.008)
M
E
M
DIM
A
A1
A3
b
C
D
E
e
L
H
E
A3
C
A
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone:
480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax:
480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Japan:
ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone:
81−3−5773−3850
ON Semiconductor Website:
http://onsemi.com
Order Literature:
http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
http://onsemi.com
4
MBD54DWT1/D
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