Power Bipolar Transistor, 600A I(C), 3-Element, NPN, Silicon,
| 参数名称 | 属性值 |
| 厂商名称 | Mitsubishi(日本三菱) |
| 包装说明 | , |
| Reach Compliance Code | unknown |
| 其他特性 | BUILT IN BIAS RESISTORS |
| 最大集电极电流 (IC) | 600 A |
| 配置 | COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 75 |
| 元件数量 | 3 |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 晶体管元件材料 | SILICON |
| QM600HA-24 | QM20HA-HB | QM600HA-2H | QM600HA-2HB | QM600HA-24B | |
|---|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 600A I(C), 3-Element, NPN, Silicon, | Power Bipolar Transistor, 20A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MODULE-3 | Power Bipolar Transistor, 600A I(C), 3-Element, NPN, Silicon | Power Bipolar Transistor, 600A I(C), 1-Element, NPN, Silicon | Power Bipolar Transistor, 600A I(C), 1-Element, NPN, Silicon |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| 最大集电极电流 (IC) | 600 A | 20 A | 600 A | 600 A | 600 A |
| 配置 | COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | COMPLEX | COMPLEX |
| 最小直流电流增益 (hFE) | 75 | 250 | 75 | 750 | 750 |
| 元件数量 | 3 | 1 | 3 | 1 | 1 |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | Mitsubishi(日本三菱) | - | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) | Mitsubishi(日本三菱) |
| 其他特性 | BUILT IN BIAS RESISTORS | BUILT IN BIAS RESISTOR | BUILT IN BIAS RESISTORS | - | - |
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