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BYS12-90

产品描述1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AC
产品类别分立半导体    二极管   
文件大小85KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 详细参数 选型对比 全文预览

BYS12-90概述

1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AC

BYS12-90规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Vishay(威世)
Reach Compliance Codeunknown
配置SINGLE
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.36 V
最大非重复峰值正向电流30 A
元件数量1
最高工作温度150 °C
最大输出电流1.5 A
最大重复峰值反向电压90 V
表面贴装YES
技术SCHOTTKY
Base Number Matches1

文档预览

下载PDF文档
BYS12-90
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 1.0 A
T
J
max.
Package
Diode variations
1.5 A
90 V
40 A
0.75 V
150 °C
DO-214AC (SMA)
Single die
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
Matte tin plated
J-STD-002 and JESD 22-B102
leads,
solderable
per
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Junction and storage temperature range
8.3 ms
10 ms
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
BYS12-90
BYS 209
90
1.5
40
30
10 000
-55 to +150
V
A
A
V/μs
°C
UNIT
Revision: 23-Dec-14
Document Number: 88950
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

BYS12-90相似产品对比

BYS12-90 BYS12-90_08 BYS12-90HE3/TR3
描述 1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AC 1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AC 1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AC
是否Rohs认证 不符合 - 符合
Reach Compliance Code unknown - unknow
配置 SINGLE - SINGLE
二极管类型 RECTIFIER DIODE - RECTIFIER DIODE
最大正向电压 (VF) 0.36 V - 0.36 V
最大非重复峰值正向电流 30 A - 40 A
元件数量 1 - 1
最高工作温度 150 °C - 150 °C
最大输出电流 1.5 A - 1.5 A
最大重复峰值反向电压 90 V - 90 V
表面贴装 YES - YES
技术 SCHOTTKY - SCHOTTKY
Base Number Matches 1 - 1

 
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