BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
Rev. 04 — 5 December 2007
Product data sheet
1. Product profile
1.1 General description
Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 (TO-220AB) and a
SOT428 (DPAK) plastic package.
1.2 Features
I
Fast switching
I
Soft recovery characteristic
I
Reverse surge capability
I
Low thermal resistance
I
Low forward voltage drop
I
High thermal cycling performance
1.3 Applications
I
Output rectifiers in high-frequency switched-mode power supplies
1.4 Quick reference data
I
V
RRM
≤
200 V
I
V
F
≤
0.895 V
I
I
O(AV)
≤
10 A
I
t
rr
= 10 ns (typ)
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Simplified outline
[1]
Description
anode 1
cathode
anode 2
mounting base; cathode
Symbol
mb
1
2
sym084
mb
3
2
1
3
SOT428 (DPAK)
1 2 3
SOT78 (3-lead TO-220AB)
[1]
It is not possible to connect to pin 2 of the SOT428 package.
NXP Semiconductors
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
3. Ordering information
Table 2.
Ordering information
Package
Name
BYQ28E-200
BYQ28ED-200
TO-220AB
DPAK
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
plastic single-ended surface-mounted package (DPAK); 3-leads (one lead
cropped)
Version
SOT78
SOT428
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
repetitive peak forward current
non-repetitive peak forward
current
square waveform;
δ
= 1.0
square waveform;
δ
= 0.5;
T
mb
≤
119
°C;
both diodes conducting
t
p
= 25
µs;
square waveform;
δ
= 0.5;
T
mb
≤
119
°C;
per diode
t = 10 ms; sinusoidal waveform; per
diode
t = 8.3 ms; sinusoidal waveform; per
diode
I
RM
I
RSM
T
stg
T
j
V
ESD
peak reverse recovery current
non-repetitive peak reverse
current
storage temperature
junction temperature
electrostatic discharge voltage
all pins; human body model;
C = 250 pF; R = 1.5 kΩ
t
p
= 2
µs; δ
= 0.001
t
p
= 100
µs
Conditions
Min
-
-
-
-
-
-
-
-
-
−40
-
-
Max
200
200
200
10
10
50
55
0.2
0.2
+150
150
8
Unit
V
V
V
A
A
A
A
A
A
°C
°C
kV
Electrostatic discharge
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
2 of 10
NXP Semiconductors
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
5. Thermal characteristics
Table 4.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
with heatsink compound;
per diode; see
Figure 1
with heatsink compound;
both diodes conducting
R
th(j-a)
thermal resistance from junction to ambient in free air; SOT78
SOT428
[1]
[1]
Min
-
-
-
-
Typ
-
-
60
50
Max
4.5
3
-
-
Unit
K/W
K/W
K/W
K/W
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
10
Z
th(j-mb)
(K/W)
1
001aag979
10
−1
t
p
T
P
δ
=
10
−2
t
p
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 1. Transient thermal impedance from junction to mounting base as a function of pulse width
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
3 of 10
NXP Semiconductors
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
6. Characteristics
Table 5.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 5 A; T
j
= 150
°C;
see
Figure 2
I
F
= 5 A; see
Figure 2
I
F
= 10 A; see
Figure 2
I
R
reverse current
V
R
= 200 V
V
R
= 200 V; T
j
= 100
°C
Dynamic characteristics
Q
r
t
rr
recovered charge
reverse recovery time
I
F
= 2 A to V
R
≥
30 V; dI
F
/dt = 20 A/µs;
see
Figure 3
ramp recovery; I
F
= 1 A to V
R
≥
30 V;
dI
F
/dt = 100 A/µs; see
Figure 3
step recovery; when switched from
I
F
= 0.5 A to I
R
= 1 A; measured at
I
R
= 0.25 A
I
RM
V
FR
peak reverse recovery
current
forward recovery
voltage
I
F
= 5 A to V
R
≥
30 V; dI
F
/dt = 50 A/µs;
see
Figure 3
I
F
= 1 A; dI
F
/dt = 10 A/µs; see
Figure 4
-
-
-
4
15
10
9
25
20
nC
ns
ns
Min
-
-
-
-
-
Typ
0.8
0.95
1.1
2
0.1
Max
0.895
1.1
1.25
10
0.2
Unit
V
V
V
µA
mA
Static characteristics
-
-
0.5
1
0.7
-
A
V
15
I
F
(A)
10
(1)
(2)
001aag978
(3)
5
0
0
0.5
1.0
V
F
(V)
1.5
(1) T
j
= 150
°C;
typical values
(2) T
j
= 150
°C;
maximum values
(3) T
j
= 25
°C;
maximum values
Fig 2. Forward current as a function of forward voltage
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
4 of 10
NXP Semiconductors
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
I
F
I
F
dl
F
dt
t
rr
time
time
10 %
Q
r
100 %
V
F
I
R
I
RM
001aab911
V
F
V
FR
time
001aab912
Fig 3. Reverse recovery definitions
Fig 4. Forward recovery definitions
8
P
tot
(W)
6
0.5
001aag976
6
P
tot
(W)
1.9
001aag977
δ
=1
a = 1.57
4
2.8
2.2
4
0.1
0.2
4.0
2
2
0
0
2
4
6
I
F(AV)
(A)
8
0
0
2
4
I
F(AV)
(A)
6
I
F(AV)
= I
F(RMS)
× √δ
a = form factor = I
F(RMS)
/ I
F(AV)
Fig 5. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 6. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYQ28_SER_E_ED_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 5 December 2007
5 of 10
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
