电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

BYG22AHE3

产品描述2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214
产品类别半导体    分立半导体   
文件大小92KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
下载文档 选型对比 全文预览

BYG22AHE3概述

2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214

文档预览

下载PDF文档
BYG22A thru BYG22D
www.vishay.com
Vishay General Semiconductor
Ultrafast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Low forward voltage
• Soft recovery characteristic
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DO-214AC (SMA)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
t
rr
E
R
T
J
max.
2.0 A
50 V to 200 V
35 A
1.0 μA
1.1 V
25 ns
20 mJ
150 °C
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I
(BR)R
= 1 A, T
J
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
R
T
J
, T
STG
SYMBOL
BYG22A
BYG22A
50
BYG22B
BYG22B
100
2.0
35
BYG22D
BYG22D
200
V
A
A
UNIT
20
- 55 to + 150
mJ
°C
Revision: 21-Dec-11
Document Number: 88959
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

BYG22AHE3相似产品对比

BYG22AHE3 BYG22A-E3 BYG22A-TR BYG22A-TR3 BYG22ATR3 BYG22AH-TR
描述 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214 2 A, 50 V, SILICON, RECTIFIER DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-214

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 613  1985  1205  2455  1040  51  32  34  52  2 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved