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BYG21KHE3TR3

产品描述1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214
产品类别半导体    分立半导体   
文件大小84KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
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BYG21KHE3TR3概述

1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214

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BYG21K, BYG21M
www.vishay.com
Vishay General Semiconductor
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristic
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AC (SMA)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
t
rr
E
R
T
J
max.
1.5 A
800 V, 1000 V
30 A
1.0 μA
1.6 V
120 ns
20 mJ
150 °C
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
(BR)R
= 1 A, T
J
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
R
T
J
, T
STG
SYMBOL
BYG21K
BYG21K
800
1.5
30
20
- 55 to + 150
BYG21M
BYG21M
1000
V
A
A
mJ
°C
UNIT
Revision: 24-Aug-12
Document Number: 88961
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

BYG21KHE3TR3相似产品对比

BYG21KHE3TR3 BYG21K-E3TR BYG21K-E3TR3 BYG21KHE3TR BYG21K_13 BYG21M BYG21KHE3
描述 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214

 
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