BYG21
Vishay Telefunken
Fast Silicon Mesa SMD Rectifier
Features
D
D
D
D
D
D
Glass passivated junction
Low reverse current
Soft recovery characteristics
Fast reverse recovery time
Good switching characteristics
Wave and reflow solderable
15 811
Applications
Surface mounting
Fast rectifier
Freewheeling diodes in SMPS and converters
Snubber diodes
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Pulse energy in avalanche mode,
non repetitive
(inductive load switch off)
Test Conditions
Type
BYG21K
BYG21M
Symbol
V
R
=V
RRM
V
R
=V
RRM
I
FSM
I
FAV
T
j
=T
stg
I
(BR)R
=1A, T
j
=25
°
C
E
R
Value
800
1000
30
1.5
–55...+150
20
Unit
V
V
A
A
°
C
mJ
t
p
=10ms,
half sinewave
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Junction lead
T
L
=const.
Junction ambient mounted on epoxy–glass hard tissue
mounted on epoxy–glass hard tissue, 50mm
2
35
m
m Cu
mounted on Al–oxid–ceramic (Al
2
O
3
), 50mm
2
35
m
m Cu
Symbol
R
thJL
R
thJA
R
thJA
R
thJA
Value
25
150
125
100
Unit
K/W
K/W
K/W
K/W
Document Number 86010
Rev. 3, 24-Jun-98
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BYG21
Vishay Telefunken
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Reverse current
Reverse recovery time
Test Conditions
I
F
=1A
I
F
=1.5A
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
I
F
=0.5A, I
R
=1A, i
R
=0.25A
Type
Symbol
V
F
V
F
I
R
I
R
t
rr
Min
Typ
Max
1.5
1.6
1
10
120
Unit
V
V
m
A
m
A
ns
Characteristics
(T
j
= 25
_
C unless otherwise specified)
100
I
R
– Reverse Current (
m
A )
I
F
– Forward Current ( A )
100
10
10
1
V
R
= V
R RM
0.1
1
25°C
75°C
T
j
= 125°C
0.1
0.01
0
94 9347
0.01
40
80
120
160
200
94 9348
0
1
2
3
4
T
j
– Junction Temperature (
°C
)
V
F
– Forward Voltage ( V )
Figure 1. Typ. Reverse Current vs. Junction Temperature
Figure 3. Typ. Forward Current vs. Forward Voltage
600
I
FAV
– Average Forward Current ( A )
t
rr
– Reverse Recovery Time ( ns )
2.0
1.6
R
thJA
=25K/W
1.2
0.8
0.4
150K/W
0
0
40
80
120
160
200
T
amb
= 125°C
500
100°C
400
300
200
100
I
R
=0.5A, i
R
=0.125A
0
0
0.2
0.4
0.6
0.8
1.0
75°C
50°C
25°C
100K/W
125K/W
94 9345
T
amb
– Ambient Temperature (
°C
)
94 9349
I
F
– Forward Current ( A )
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
Figure 4. Max. Reverse Recovery Time vs.
Forward Current
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Document Number 86010
Rev. 3, 24-Jun-98
BYG21
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 86010
Rev. 3, 24-Jun-98
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