BC846 - BC850 — NPN Epitaxial Silicon Transistor
April 2011
BC846 - BC850
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
•
Complement to BC856 ... BC860
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
Symbol
V
CBO
Collector-Base Voltage
T
a
= 25°C unless otherwise noted
Parameter
Value
Units
: BC846
80
V
: BC847/850
50
V
: BC848/849
30
V
Collector-Emitter Voltage : BC846
65
V
V
CEO
: BC847/850
45
V
: BC848/849
30
V
Emitter-Base Voltage
: BC846/847
6
V
V
EBO
: BC848/849/850
5
V
Collector Current (DC)
100
mA
I
C
Collector Power Dissipation
310
mW
P
C
Junction Temperature
150
°C
T
J
Storage Temperature
-65 to 150
°C
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
Symbol
Parameter
T
a
= 25°C unless otherwise noted
Test Condition
Min.
110
Typ.
Max.
15
800
250
600
Units
nA
mV
mV
mV
mV
mV
mV
MHz
pF
pF
dB
dB
dB
dB
I
CBO
Collector Cut-off Current
V
CB
=30V, I
E
=0
DC Current Gain
V
CE
=5V, I
C
=2mA
h
FE
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
V
BE
(sat) Collector-Base Saturation Voltage
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
BE
(on) Base-Emitter On Voltage
V
CE
=5V, I
C
=10mA
Current Gain Bandwidth Product
V
CE
=5V, I
C
=10mA, f=100MHz
f
T
Output Capacitance
V
CB
=10V, I
E
=0, f=1MHz
C
ob
Input Capacitance
V
EB
=0.5V, I
C
=0, f=1MHz
C
ib
NF
Noise Figure
: BC846/847/848
V
CE
= 5V, I
C
= 200μA
R
G
=2KΩ, f=1KHz
: BC849/850
: BC849
V
CE
= 5V, I
C
= 200μA
R
G
=2KΩ, f=30~15000Hz
: BC850
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
© 2011 Fairchild Semiconductor Corporation
BC846 - BC850 Rev. B1
1
580
90
200
700
900
660
300
3.5
9
2
1.2
1.4
1.4
700
720
6
10
4
4
3
www.fairchildsemi.com
BC846 - BC850 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
100
10000
I
C
[mA], COLLECTOR CURRENT
80
I
B
= 400
μ
A
I
B
= 350
μ
A
V
CE
= 5V
h
FE
, DC CURRENT GAIN
I
B
= 300
μ
A
60
I
B
= 250
μ
A
I
B
= 200
μ
A
1000
40
I
B
= 150
μ
A
I
B
= 100
μ
A
100
20
I
B
= 50
μ
A
0
0
4
8
12
16
20
10
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10000
100
I
C
= 10 I
B
1000
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
V
CE
= 2V
10
100
1
V
CE
(sat)
10
1
10
100
1000
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Figure 4. Base-Emitter On Voltage
100
1000
f=1MHz
V
CE
=5V
C
ob
[pF], CAPACITANCE
10
100
1
10
0.1
1
10
100
1000
1
0.1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
© 2011 Fairchild Semiconductor Corporation
BC846 - BC850 Rev. B1
3
www.fairchildsemi.com
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Product Status
Formative /
In Design
First Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I53
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