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SB5150

产品描述Rectifier Diode,
产品类别分立半导体    二极管   
文件大小306KB,共2页
制造商Galaxy Semi-Conductor Co Ltd
下载文档 详细参数 选型对比 全文预览

SB5150概述

Rectifier Diode,

SB5150规格参数

参数名称属性值
厂商名称Galaxy Semi-Conductor Co Ltd
Reach Compliance Codeunknown
二极管类型RECTIFIER DIODE

SB5150文档预览

BL
FEATURES
GALAXY ELECTRICAL
Reverse Voltage: 150 V
Forward Current: 5.0 A
SB5150
SCHOTTKY BARRIER RECTIFIER
.
For use in low voltage, high frequency inverters free
wheeling, and polarity protection applications
.
Metal-Semiconductor junction with guard ring
.
Epitaxial construction
.
Low forward voltage drop, low swithing losses
.
High surge capacity
DO-27
MECHANICAL DATA
.
Case:
JEDEC DO-27, molded plastic body
.
Terminals:
Axial lead ,solderable per MIL-STD-
750, Method 2026
.
Polarity:
As marked
.
Mounting Position:
Any
.
Weight:
0.041 unces,1.15 grams
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward tolal device
rectified current @T
L
=110°C
Peak forward surge current
8.3ms single half sine-wave
superimposed on rated load
Maximum instantaneous
forward voltage @5.0A
Maximum reverse current @T
A
=25°C
at rated DC blocking voltage @T
A
=100°C
Symbol
V
RRM
V
RWS
V
DC
I
(AV)
I
FSM
SB5150
150
105
150
5.0
120
UNITS
V
V
V
A
A
V
F
I
R
R
θJA
T
J
T
STG
0.90
0.2
2.0
40
-55 --- +150
-55 --- +150
V
mA
°C/W
°C
°C
www.galaxycn.com
Maximum thermal resistance (Note1)
Operating junction temperature range
Storage temperature range
NOTES:
1. Thermal resistance from junction to ambient.
Document Number 1066007
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
SB5150
FIG.1 TYPICAL FORWARD CHARACTERISTICS
Instantaneous Forward Current, (A)
10
5.0
FIG.2 FORWARD DERATING CURVE
5.0
Average Forward Rectified
Current, (A)
0.8
1.1
4.0
3.0
1.0
2.0
1.0
0.1
0.5
0.6
0.7
0.9
1.0
1.2 1.3
0
0
25
50
75
100
125
150
Instantaneous Forward Voltage, ( V )
Lead Temperature, ( °C )
FIG.3 TYPICAL REVERSE CHARACTERISTICS
Instantaneous Reverse Leakage
Current, (mA)
1000
FIG.4 PEAK FORWARD SURGE CURRENT
120
100
Peak
F
orward
Surge Current,
(A)
120
140
96
10
T
J
=125°C
1.0
72
48
0.1
T
J
=25°C
24
0.01
0
20
40
60
80
100
0
1
10
100
Percent Of Rated Peak Reverse Voltage, %
Number Of Cycles At 60Hz
www.galaxycn.com
Document Number 1066007
BL
GALAXY ELECTRICAL
2.

SB5150相似产品对比

SB5150
描述 Rectifier Diode,
厂商名称 Galaxy Semi-Conductor Co Ltd
Reach Compliance Code unknown
二极管类型 RECTIFIER DIODE

 
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