The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 1 October 2004.
INCH-POUND
MIL-PRF-19500/452G
1 July 2004
SUPERSEDING
MIL-PRF-19500/452F
18 September 2003
* PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW LEVEL VOLTAGE-REFERENCE,
TEMPERATURE COMPENSATED, TYPES 1N4565A-1 THROUGH 1N4584A-1, AND 1N4565AUR-1
THROUGH 1N4584AUR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC, RADIATION HARDENED
(TOTAL DOSE ONLY) TYPES JANTXVM, D, L, R, F, G, H; JANSM, D, L, R, F, G, H;
JANHCM, D, L, R, F, G, H; AND JANKCM, D, L, R, F, G, H
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for 6.4 volts ±5 percent, silicon, low bias
current, voltage-reference, temperature compensated diodes. Four levels of product assurance are provided for each
encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each
unencapsulated device type die. Seven levels of radiation hardened (total dose only) product assurance are provided
for each encapsulated device type, and two levels of product assurance for each unencapsulated device type die as
specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (DO-7 and DO-35), figure 2 (DO-213AA), figure 3 (JANHCA and JANKCA),
figure 4 (JANHCB and JANKCB), and figure 5 (JANHCC and JANKCC).
1.3 Maximum ratings. (Unless otherwise specified T
A
= +25°C).
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
PT
mW
500
TSTG and TJ
°C
-55 to +175
IZM (1)
mA dc
70
Power derating
above TA = +25°C
mW/°C
3.33
(1) To guarantee voltage temperature stability, it is necessary to maintain the proper Iz as specified in
1.4 herein.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil
. Since contact information can change, you may want to verify the currency of
this address information using the ASSIST Online database at
http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/452G
1.4 Primary electrical characteristics. Unless otherwise specified, primary electrical characteristics at T
A
= +25°C.
V
Z
I
R
Z
Z
∆V
Z
Type (1) (2)
(voltage-
I
Z
= 0.5 mA dc
V
R
= 3.0 V
I
Z
= 0.5 mA dc
temperature
stability)
Min
Max
V dc
ohms
Volts
Volts
µA
1N4565A-1, 1N4565AUR-1
0.100
200
6.08
6.72
2.0
1N4566A-1, 1N4566AUR-1
0.050
200
6.08
6.72
2.0
1N4567A-1, 1N4567AUR-1
0.020
200
6.08
6.72
2.0
1N4568A-1, 1N4568AUR-1
0.010
200
6.08
6.72
2.0
1N4569A-1, 1N4569AUR-1
0.005
200
6.08
6.72
2.0
Z
Z
V
Z
I
R
∆V
Z
Type (1)
(voltage-
I
Z
= 1.0 mA dc
I
Z
= 1.0 mA dc
V
R
= 3.0 V
temperature
Stability)
Min
Max
V dc
ohms
Volts
Volts
µA
1N4570A-1, 1N4570AUR-1
0.100
100
6.08
6.72
2.0
1N4571A-1, 1N4571AUR-1
0.050
100
6.08
6.72
2.0
1N4572A-1, 1N4572AUR-1
0.020
100
6.08
6.72
2.0
1N4573A-1, 1N4573AUR-1
0.010
100
6.08
6.72
2.0
1N4574A-1, 1N4574AUR-1
0.005
100
6.08
6.72
2.0
Z
Z
V
Z
I
R
∆V
Z
Type (1)
(voltage-
I
Z
= 2.0 mA dc
V
R
= 3.0 V
I
Z
= 2.0 mA dc
temperature
stability)
Min
Max
V dc
ohms
Volts
Volts
µA
1N4575A-1, 1N4575AUR-1
0.100
50
6.08
6.72
2.0
1N4576A-1, 1N4576AUR-1
0.050
50
6.08
6.72
2.0
1N4577A-1, 1N4577AUR-1
0.020
50
6.08
6.72
2.0
1N4578A-1, 1N4578AUR-1
0.010
50
6.08
6.72
2.0
1N4579A-1, 1N4579AUR-1
0.005
50
6.08
6.72
2.0
”
V
Z
I
R
Z
Z
∆V
Z
Type (1)
(voltage-
I
Z
= 4.0 mA dc
I
Z
= 4.0 mA dc
V
R
= 3.0 V
temperature
Stability)
Min
Max
V dc
ohms
Volts
Volts
µA
1N4580A-1, 1N4580AUR-1
0.100
25
6.08
6.72
2.0
1N4581A-1, 1N4581AUR-1
0.050
25
6.08
6.72
2.0
1N4582A-1, 1N4582AUR-1
0.020
25
6.08
6.72
2.0
1N4583A-1, 1N4583AUR-1
0.010
25
6.08
6.72
2.0
1N4584A-1, 1N4584AUR-1
0.005
25
6.08
6.72
2.0
(1) Electrical characteristics and test conditions for " A-1, and AUR-1" devices are identical.
(2) To guarantee voltage temperature stability, it is necessary to maintain the proper I
Z
as specified in 1.4 herein.
2
MIL-PRF-19500/452G
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
*
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
*
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://www.dodssp.daps.mil
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA
19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and figures 1, 2, 3, 4, and 5 herein.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Diode construction. These devices shall be constructed in a manner and using material which enable the
diodes to meet the applicable requirements of MIL-PRF-19500 and this document.
3
MIL-PRF-19500/452G
Dimensions
Symbol
Inches
Min
BD
BL
LD
LL
LL
1
.060
.120
.018
1.000
Max
.107
.300
.023
1.500
0.050
Millimeters
Min
1.52
3.05
0.46
25.40
Max
2.72
7.62
0.58
38.10
1.27
4
3
3
Notes
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within
this cylinder but shall not be subject to minimum limit of BD.
4. Within this zone, lead diameter may vary to allow for lead finishes and irregularities, other than
heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 1. Physical dimensions 1N4565A-1 through 1N4584A-1 (DO-7 and DO-35).
4
MIL-PRF-19500/452G
Symbol
Dimensions
Inches
Millimeters
Min
Max
.067
.022
.146
Min
1.60
0.41
3.30
Max
1.70
0.56
3.71
BD
ECT
BL
S
.063
.016
.130
.001 Min
0.03 Min
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 2. Physical dimensions 1N4565AUR-1 through 1N4584AUR-1 (DO-213AA).
5
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