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SCVN0635N2

产品描述Small Signal Field-Effect Transistor, 0.6A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
产品类别分立半导体    晶体管   
文件大小124KB,共4页
制造商Supertex
下载文档 详细参数 选型对比 全文预览

SCVN0635N2概述

Small Signal Field-Effect Transistor, 0.6A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39

SCVN0635N2规格参数

参数名称属性值
厂商名称Supertex
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接DRAIN
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压350 V
最大漏极电流 (ID)0.6 A
最大漏源导通电阻10 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)20 pF
JEDEC-95代码TO-39
JESD-30 代码O-MBCY-W3
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料METAL
封装形状ROUND
封装形式CYLINDRICAL
极性/信道类型N-CHANNEL
功耗环境最大值6 W
认证状态Not Qualified
表面贴装NO
端子形式WIRE
端子位置BOTTOM
晶体管应用SWITCHING
晶体管元件材料SILICON

SCVN0635N2相似产品对比

SCVN0635N2 SCVN0640N2 SXVVN0640N2 SJVN0640N2 SXVN0640N2 SXVVN0635N2 SXVN0635N2 SJVN0635N2
描述 Small Signal Field-Effect Transistor, 0.6A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.6A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.6A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.6A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.6A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.6A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.6A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Small Signal Field-Effect Transistor, 0.6A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 350 V 400 V 400 V 400 V 400 V 350 V 350 V 350 V
最大漏极电流 (ID) 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A 0.6 A
最大漏源导通电阻 10 Ω 10 Ω 10 Ω 10 Ω 10 Ω 10 Ω 10 Ω 10 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss) 20 pF 20 pF 20 pF 20 pF 20 pF 20 pF 20 pF 20 pF
JEDEC-95代码 TO-39 TO-39 TO-39 TO-39 TO-39 TO-39 TO-39 TO-39
JESD-30 代码 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
元件数量 1 1 1 1 1 1 1 1
端子数量 3 3 3 3 3 3 3 3
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装主体材料 METAL METAL METAL METAL METAL METAL METAL METAL
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
极性/信道类型 N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
功耗环境最大值 6 W 6 W 6 W 6 W 6 W 6 W 6 W 6 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
厂商名称 Supertex - Supertex Supertex Supertex Supertex Supertex Supertex

 
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