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Datasheet> 器件分类 > 分立半导体> 晶体管> SXVVN0635N2

SXVVN0635N2: 产品描述Small Signal Field-Effect Transistor, 0.6A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39; 产品类别分立半导体晶体管; 文件大小124KB，共4页; 制造商Supertex

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SXVVN0635N2概述

Small Signal Field-Effect Transistor, 0.6A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39

SXVVN0635N2规格参数

参数名称	属性值
厂商名称	Supertex
Reach Compliance Code	unknown
ECCN代码	EAR99
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	350 V
最大漏极电流 (ID)	0.6 A
最大漏源导通电阻	10 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	20 pF
JEDEC-95代码	TO-39
JESD-30 代码	O-MBCY-W3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	METAL
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	N-CHANNEL
功耗环境最大值	6 W
认证状态	Not Qualified
表面贴装	NO
端子形式	WIRE
端子位置	BOTTOM
晶体管应用	SWITCHING
晶体管元件材料	SILICON

SXVVN0635N2相似产品对比

	SXVVN0635N2	SCVN0640N2	SXVVN0640N2	SJVN0640N2	SXVN0640N2	SXVN0635N2	SCVN0635N2	SJVN0635N2
描述	Small Signal Field-Effect Transistor, 0.6A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.6A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.6A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.6A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.6A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.6A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.6A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39	Small Signal Field-Effect Transistor, 0.6A I(D), 350V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
外壳连接	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	350 V	400 V	400 V	400 V	400 V	350 V	350 V	350 V
最大漏极电流 (ID)	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A	0.6 A
最大漏源导通电阻	10 Ω	10 Ω	10 Ω	10 Ω	10 Ω	10 Ω	10 Ω	10 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)	20 pF	20 pF	20 pF	20 pF	20 pF	20 pF	20 pF	20 pF
JEDEC-95代码	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39
JESD-30 代码	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
元件数量	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	METAL	METAL	METAL	METAL	METAL	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
功耗环境最大值	6 W	6 W	6 W	6 W	6 W	6 W	6 W	6 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Supertex	-	Supertex	Supertex	Supertex	Supertex	Supertex	Supertex

SXVVN0635N2

SXVVN0635N2概述

SXVVN0635N2规格参数

SXVVN0635N2相似产品对比

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